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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


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Journal ArticleDOI
TL;DR: In this article, a two-cascaded semiconductor optical amplifiers (SOAs) in a counter-propagating feedback configuration were used for all-optical logic NOR gates.
Abstract: The authors present a novel all-optical logic NOR gate using two-cascaded semiconductor optical. amplifiers (SOAs) in a counterpropagating feedback configuration. This configuration accentuates the gain nonlinearity due to the mutual gain modulation of the two SOAs. The all-optical NOR gate feasibility has been demonstrated delivering an extinction ratio higher than 12 dB over a wide range of wavelength.

79 citations

Journal ArticleDOI
Abstract: Semiconductor lasers emitting at 1.55 μm with external differential efficiencies >1 have been created by monolithically connecting several active regions in series within a single optical waveguide. This is accomplished by epitaxially stacking a number of p–i–n multiquantum well active regions with intermediate n++–p++ back diodes, which enable the entire terminal current to flow through each active region stages in series. Such lasers should also improve the impedance match as well as provide for low-noise, high-efficiency microwave links.

79 citations

Journal ArticleDOI
TL;DR: In this paper, a theoretical analysis of the modulation response of a semiconductor laser amplifier is presented, where the role of the waveguide (scattering) loss is investigated in detail and is shown to influence the qualitative behavior of the response.
Abstract: We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss is investigated in detail and is shown to influence the qualitative behavior of the response. In particular, it is found that a certain amount of waveguide loss may be beneficial in some cases. Finally, the role of the microwave propagation of the modulation signals is investigated and different feeding schemes are analyzed. The nonlinear transparent waveguide, i.e., an amplifier saturated to the point where the stimulated emission balances the internal losses, is shown to be analytically solvable and is a convenient vehicle for gaining qualitative understanding of the dynamics of modulated semiconductor optical amplifiers.

79 citations

Journal ArticleDOI
TL;DR: In this article, an analytical expression for the low-temperature optical susceptibility of quantum-well semiconductor lasers is presented based on a simple parabolic band model, which can be used to analyze the dynamics of multimode devices or devices with large carrier density variations.
Abstract: An analytical expression for the low-temperature optical susceptibility of quantum-well semiconductor lasers is presented based on a simple parabolic band model. The optical susceptibility obtained keeps the nonlinear dependence on the carrier density, providing both a broad gain spectrum and a dispersion curve, so it can be used to analyze the dynamics of multimode devices or devices with large carrier density variations. The resulting peak gain, differential peak gain, and linewidth enhancement factor are discussed. cw operation of a single-mode laser is studied as a function of the frequency of the cavity resonance. An analytical approximation to the finite-temperature gain spectrum is also presented, although the refractive index spectrum must be determined numerically. @S1050-2947~98!07501-5# PACS number~s!: 42.55.Px, 78.66.2w The analysis of the static and dynamical properties of semiconductor lasers requires a knowledge of the coupling between the active semiconductor material and the optical field within the active region. In a semiclassical approach @1#, which constitutes the foundation for simpler descriptions as the rate equation ~RE! approximation @2#, the optical field is described by means of Maxwell’s equations, and its coupling to the material is described by the electrical susceptibility of the active medium. The imaginary part of the electrical susceptibility describes the energy exchange ~absortion or stimulated emission! between the field and the medium, while its real part describes the dispersive effect ~refractive

79 citations

Journal ArticleDOI
TL;DR: In this article, the unambiguous spectral signature of Bloch gain in a special QCL designed to enhance the latter by exhibiting laser action in the condition of weak to vanishing population inversion.
Abstract: Esaki and Tsu’s superlattice1, made by alternating two different semiconductor materials, was the first one-dimensional artificial crystal that demonstrated the ability to tailor semiconductor properties. One motivation of this work was the realization of the Bloch oscillator2,3 and the use of its particular dispersive optical gain4,5 to achieve a tuneable source of electromagnetic radiation. However, these superlattices were electrically unstable in the steady state6. Fortunately, because it is based on scattering-assisted transitions, this particular gain does not arise only in superlattices, but also more generally in semiconductor heterostructures7,8 such as quantum cascade lasers9 (QCLs), where the electrical stability can be controlled10. Here, we show the unambiguous spectral signature of Bloch gain in a special QCL designed to enhance the latter by exhibiting laser action in the condition of weak to vanishing population inversion.

79 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789