Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: In this paper, the authors used the Hakki-Paoli method to extract the gain and refractive index spectra of an amplified spontaneous emission spectroscopy (SSE) system.
Abstract: Amplified spontaneous emission spectroscopy is used to extract the gain and refractive index spectra systematically. We obtain the gain and differential gain spectra using the Hakki-Paoli method. The refractive index profile, the induced change in refractive index by an incremental current, and the linewidth enhancement factor are measured from the Fabry-Perot peaks and the current-induced peak shifts in the amplified spontaneous emission spectra. The measured optical gain and refractive index are then compared with our theoretical model for strained quantum-well lasers. We show that a complete theoretical model for calculating the electronic band structure, the optical constant, and the linewidth enhancement factor agrees very well with the experiment. Our approach demonstrates that amplified spontaneous emission spectroscopy can be a good diagnostic tool to characterize laser diodes, extract the optical gain and index profiles, and confirm material parameters such as the strained quantum-well band structure parameters for a semiconductor structure under carrier injection.
77 citations
TL;DR: In this article, an experimental demonstration of semiconductor saturable absorber-free mode-locked optically pumped semiconductor disk laser was presented, which achieved a record high 6.8 kW peak power in both hard and soft aperture configurations.
Abstract: Experimental demonstration of semiconductor saturable absorber-free mode-locked optically pumped semiconductor disk laser is presented. The origin of pulsed operation is attributed to the intensity dependent Kerr lens effect arising in the semiconductor gain medium. Achieved results represent a novel method to mode-lock this type of laser opening new application opportunities. The laser worked stably in both hard and soft aperture configurations. No semiconductor saturable absorber was used in the laser cavity and the operation was self-starting. The laser was mode-locked at 210 MHz repetition rate with 1.5 W average output power and 930 fs pulse width at 985 nm. A record high 6.8 kW peak power was achieved. Measured data is presented along with a discussion of the Kerr lens effect in the cavity.
76 citations
TL;DR: In this paper, a two-dimensional model for quantum-well laser that solves, self-consistently, the semiconductor equations together with the complex scalar wave equation is described.
Abstract: A two-dimensional model for quantum-well lasers that solves, self-consistently, the semiconductor equations together with the complex scalar wave equation is described. It incorporates a position- and wavelength-dependent gain function which is derived from a quantum mechanical calculation. Such a model enables one to predict the characteristics of a quantum-well laser with a minimal number of empirical parameters. The output of the model includes light-current characteristics, the current distribution, and the optical field intensity distribution, obtained simultaneously in the calculation. Examples for modeling GRIN-SCH SQW (graded-index separate confinement heterostructure single quantum well) ridge wave guide lasers are given, and good agreement with experimental results is obtained. The model is used to optimize the geometry of a GRIN-SCH SQW laser for minimum threshold current and maximum efficiency. >
76 citations
Patent•
21 Nov 1983TL;DR: In this article, a Fabry-Perot interferometer is coupled with two feedback loops, one for high frequency control of the drive current and the other for low frequency controlling the laser temperature.
Abstract: Apparatus including a semiconductor laser source and means for stabilizing the frequency of the laser. A feedback signal is provided by means such as a Fabry-Perot interferometer, which signal is coupled simultaneously to two feedback loops. One loop provides high frequency control of the drive current while the other loop provides low frequency control of the laser temperature.
75 citations
TL;DR: In this article, the carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations describing the electron densities in each subband self-consistently.
Abstract: The carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations describing the electron densities in each subband self-consistently. These calculations are repeated for a range of temperatures from 20 to 300 K. The lifetime of the upper laser level found by this self-consistent method is then used to calculate the gain for this range of temperatures. At a temperature of 77 K, the gain of the laser is found to be 34 cm−1/(kA/cm−2), when only electron–longitudinal-optical phonon transitions are considered in the calculation. The calculated gain decreases to 19.6 cm−1/(kA/cm−2) when electron–electron transition rates are included, thus showing their importance in physical models of these devices. Further analysis shows that thermionic emission could be occurring in real devices.
75 citations