Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.

Slow Light in a Semiconductor Waveguide for True-Time Delay Applications in Microwave Photonics

Abstract: We have investigated the slow and fast light properties of a semiconductor waveguide device employing concatenated gain and absorber sections. This letter presents the experimental results as well as theoretical modeling. A large phase shift of 110deg and a true-time delay of more than 150 ps are demonstrated. The combination of amplitude and phase control of the modulated signal shows great promise for applications within microwave photonics.

Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

Abstract: The anisotropy of the modal gain and the linewidth enhancement factor was experimentally measured in InAs/AlGaInAs/InP semiconductor lasers with an active region composed of quantum confined structures in the form of short wires called quantum dashes. This anisotropy is due to the polarization dependence of the transition matrix element in these quantum nanostructures. The spectral dependence of the gain and linewidth enhancement factor was investigated in a wavelength range from 1540 to 1640 nm at subthreshold current densities. The largest gain and the smallest linewidth enhancement factor were obtained when the quantum dashes were oriented perpendicular to the axis of the laser cavity.

Microscopic analysis of optical gain in InGaN/GaN quantum wells

Abstract: A microscopic theory is used to analyze optical gain in InGaN∕GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rate.

Modelocking of Semiconductor Laser Diodes

Abstract: The history of modelocking of the semiconductor laser is reviewed. The theory of modelocking as it relates to the semiconductor laser diode system is developed and discussed. Experiments on semiconductor lasers at MIT and the Bell Laboratories under both active and passive modelocking conditions are described.

Semiconductor lasers with integrated plasmonic polarizers

Abstract: The authors reported the plasmonic control of semiconductor laser polarization by means of metallic gratings and subwavelength apertures patterned on the laser emission facet. An integrated plasmonic polarizer can project the polarization of a semiconductor laser onto other directions. By designing a facet with two orthogonal grating-aperture structures, a polarization state consisting of a superposition of a linearly and right-circularly polarized light was demonstrated in a quantum cascade laser; a first step toward a circularly polarized laser.