Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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04 Oct 1999TL;DR: In this paper, a frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) was proposed for generating light at a wavelength in the range of 300-550 nanometers.
Abstract: A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.
69 citations
01 Jul 2016
TL;DR: Calculations showed excellent agreement with the experiment, key for future laser design.
Abstract: Optical gain, absorption and spontaneous emission spectra for GaAs 0.978 Bi 0.022 /GaAs laser diodes are measured experimentally and compared with theory. Internal optical losses of 10–15 cm−1 and peak modal gain of 24 cm−1 are measured at threshold. The results of calculations showed excellent agreement with the experiment, key for future laser design.
69 citations
TL;DR: In this paper, the authors measured the linewidth of a microdisk laser for cavity volumes near a cubic wavelength, and showed that the pump power remains near the sub-threshold values for pump powers well above threshold in agreement with the coupled dynamics of the optical emission and the nonequilibrium electron-hole gas in the cavity.
Abstract: Semiconductor microdisk laser linewidths are measured for cavity volumes near a cubic wavelength. The linewidths remain near the subthreshold values for pump powers well above threshold in agreement with a microscopic theory that includes the coupled dynamics of the optical emission and the nonequilibrium electron-hole gas in the cavity.
69 citations
TL;DR: In this paper, the optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped barriers were compared.
Abstract: Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.
69 citations
TL;DR: In this article, a multiwavelength, fiber ring laser source is demonstrated, which generates 10 wavelength channels, simultaneously mode-locked and synchronized at 30 GHz, each producing 7-ps pulses.
Abstract: A multiwavelength, fiber ring laser source, is demonstrated. It generates 10 wavelength channels, simultaneously mode-locked and synchronized at 30 GHz, each producing 7-ps pulses. The mode-locking technique relies on the gain saturation of the semiconductor amplifier from an external optical pulse train to impose the simultaneous mode-locking of the 10 wavelengths.
69 citations