Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s and the extinction ratio is improved by 8dB compared with previously published work.
Abstract: An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.
65 citations
TL;DR: In this paper, a simple semianalytical model for evaluating the free-carrier loss in the waveguide layer of large-cavity semiconductor lasers is presented, which proves that these losses may become an important factor at high bias currents.
Abstract: We present a simple semianalytical model for evaluating the free-carrier loss in the waveguide layer of large-cavity semiconductor lasers, which proves that these losses may become an important factor at high bias currents. It is shown that nonbroadened asymmetric waveguide structures can significantly reduce these losses when compared to broadened symmetric waveguides, with little or no degradation in threshold, near- and far-field properties, and are thus a promising configuration for high-power lasers operating high above threshold.
65 citations
TL;DR: In this paper, the response time when an optical pulse is injected in order to make the system switch from one mode to the counter-propagating one was studied, and the optimal pulse energy to induce switching was determined.
Abstract: Semiconductor ring lasers display a variety of dynamical regimes originating from the nonlinear competition between the clockwise and counter-clockwise propagating modes. In particular, for large pumping the system has a bistable regime in which two stationary quasi-unidirectional counter-propagating modes coexist. Bistability is induced by cross-gain saturation of the two counter-propagating modes being stronger than the self-saturation and can be used for data storage when the semiconductor ring laser is addressed with an optical pulse. In this work we study the response time when an optical pulse is injected in order to make the system switch from one mode to the counter-propagating one. We also determine the optimal pulse energy to induce switching.
64 citations
TL;DR: In this article, a series of quantum cascade laser micropillars emitting at ≈3.5THz were fabricated and characterized for small radius to wavelength ratios, unlike standard dielectric structures.
Abstract: The authors fabricate and characterize a series of quantum cascade laser micropillars emitting at ≈3.5THz. The optical confinement by double plasmon guiding in the vertical direction creates a large impedance mismatch between the confined optical modes and free space. Thus, unlike standard dielectric structures, large quality (Q) factors are maintained for small radius to wavelength ratios. The narrow bandwidth of the optical mode results in low threshold current (8mA) single-mode lasers. Cavity pulling enables a fine dynamic tuning of the emission wavelength. Comparison of the frequency shift due to cavity pulling and the Stark effect provides an experimental measure of the gain (36cm−1).
64 citations
TL;DR: In this article, it was shown that application of biaxial tension to the active region of a bulk or quantum well semiconductor laser can significantly enhance TM gain compared to TE gain and reduce the threshold current density, due to suppression of spontaneous emission polarised in the growth plane of the laser structure.
Abstract: It is shown that application of biaxial tension to the active region of a bulk or quantum well semiconductor laser can significantly enhance TM gain compared to TE gain and reduce the threshold current density, due to suppression of spontaneous emission polarised in the growth plane of the laser structure. The differential gain is enhanced compared to unstrained structures and a larger peak gain can be achieved than in comparable structures under biaxial compression.
64 citations