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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a review and discussion of the directly modulated semiconductor lasers and their applications to optical communications and microwave photonics is presented for the first time to the best of our knowledge.
Abstract: This paper presents a review and discussion of the directly modulated semiconductor lasers and their applications to optical communications and microwave photonics. A detailed and comprehensive demonstration of directly modulated semiconductor lasers from development history to specific techniques on measurement, analysis, and packaging is provided for the first time to the best of our knowledge. A few typical applications based on directly modulated lasers are also illustrated, such as optical fiber communications, free-space optical communications and microwave photonics. Future directions of research are also highlighted.

61 citations

Journal ArticleDOI
TL;DR: In this paper, a theoretical analysis of the compound cavity of a semiconductor laser with external optical feedback is conducted, and the dependence of the laser oscillation on the external-cavity length is qualitatively explained.
Abstract: The theoretical analysis of the compound cavity of a semiconductor laser with external optical feedback is conducted. For large optical feedback, the output power from the laser and its oscillation frequency differ from those for small optical feedback. From the rate equations of the compound cavity, the conditions of the laser oscillation are derived in the presence of large optical feedback The dependencies of the output power and the laser oscillation frequency on the external-cavity length are investigated. Some new results involving laser oscillation depending on the external-cavity length are presented. The experimental results are compared with theoretical predictions. The dependence of the laser oscillation on the external-cavity length is qualitatively explained in the present model. >

61 citations

Patent
14 Jul 2005
TL;DR: In this article, a first conductive type semiconductor region is provided on a surface of GaAs, and an active layer has a pair of side surfaces on the sides and top of the active layer.
Abstract: In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.

60 citations

Journal ArticleDOI
TL;DR: In this article, a model for band-to-band transitions including momentum conservation and an energy and density-dependent lifetime broadening is proposed. But the model is not suitable for the case of GaAs/AlGaAs MQWHs.
Abstract: Important laser parameters of GaAs/AlGaAs MQWH's were measured by means of optical gain spectroscopy. Unsaturated optical net gain spectra are carefully analyzed using a model for band-to-band transitions including momentum conservation and an energy-and density-dependent lifetime broadening. The calculated dependence of the peak gain on the carrier density agrees well with experimental data. The description of energetic positions of the peak gain has to include a bandgap shrinkage with carrier density, present at laser threshold. Temperature-dependent measurements of the onset of optical net gain reveal a pure thermodynamic behavior of the absolute threshold values as a function of L z and of the characteristic temperature T 0 .

60 citations

Journal ArticleDOI
TL;DR: In this paper, a dual-mode long-cavity multisection DFB laser is driven at a subharmonic of the free-running-mode beat signal frequency to produce phase-locked millimetre waves with a 3 dB linewidth of less than 10 Hz and a 3dB locking range of ~500 MHz.
Abstract: The authors demonstrate the optical generation of extremely narrow linewidth millimetre-wave signals between 40 and 60 GHz using a single-chip semiconductor laser. A dual-mode long-cavity multisection DFB semiconductor laser is driven at a subharmonic of the free-running-mode beat signal frequency to produce phase-locked millimetre waves with a 3 dB linewidth of less than 10 Hz and a 3 dB locking range of ~500 MHz.

60 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789