Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry-Perot semiconductor lasers is reported in this paper, where the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz to 12 GHz and enhances relaxation peaks of the slave laser RIN spectra.
Abstract: An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry–Perot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results.
55 citations
TL;DR: Differential carrier lifetimes of semiconductor lasers are obtained directly from the device impedance measurements as discussed by the authors, which gives accurate lifetimes down to low bias currents, at which correct lifetimes are an order of magnitude higher than those obtained by a commonly used optical technique.
Abstract: Differential carrier lifetimes of semiconductor lasers are obtained directly from the device impedance measurements. This new technique gives accurate lifetimes down to low bias currents, at which correct lifetimes are an order of magnitude higher than those obtained by a commonly used optical technique. Correct lifetimes reconcile the results of early PL studies and suggest much higher carrier concentrations.
55 citations
TL;DR: In this article, the vibrational level populations in CO 2 lasers with mixtures of CO 2, N 2, CO, and He have been calculated using a method developed previously in [1] and [2].
Abstract: The vibrational level populations in CO 2 lasers with mixtures of CO 2 , N 2 , CO, and He have been calculated using a method developed previously in [1] and [2]. A number of transition probabilities between the vibrational levels due to molecular collisions, the dependences of the population inversion upon various laser parameters (such as the total and partial pressures of the gases, electron density, and tube radius), and the radial profile of the laser gain are calculated in this paper. The calculations show that the CO molecules formed in the discharge play a significant role in the laser. The results given in this paper and in [2] allow us to explain all the main characteristics of both the pumped and the sealed-off CO 2 lasers.
55 citations
20 Oct 2014
TL;DR: In this paper, it was shown that ultrafast nonequilibrium kinetic hole burning in electron/hole carrier distributions dictates the outcome of femtosecond duration mode-locked pulse formation.
Abstract: Semiconductor disk lasers have been shown to be ideal as wavelength-agile, high-brightness sources for producing high average power under various pulsed mode-locking scenarios. Systematic microscopic modeling reveals that ultrafast nonequilibrium kinetic hole burning in electron/hole carrier distributions dictates the outcome of femtosecond duration mode-locked pulse formation. The existence of a large reservoir of unsaturated carriers within the inverted distributions leads to the emergence of multiple pulse waveforms (not necessarily harmonically mode-locked pulse trains) that inefficiently draw on these carrier reservoirs. The concept of gain is no longer meaningful in this limit, and the dynamical inversion of electrons and holes primarily in the active medium establishes the final dynamical state of the system. The simulation results explain much of the generic behavior observed in key recent experiments and point to the difficulty of pushing semiconductor mode-locked lasers to pulse durations below 100 fs.
54 citations
TL;DR: In this article, the authors analyzed the interplay of these two carrier populations in terms of a simple rate equation model based on the steady-state and small-signal properties of the model, and discussed the optical modulation response and four-wave mixing properties of QD semiconductor optical amplifiers.
Abstract: Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor optical amplifiers may be operated in regimes of high linearity, ie with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states In this paper, we analyse the interplay of these two carrier populations in terms of a simple rate equation model Based on the steady-state and small-signal properties of the model, we analyse and discuss the optical modulation response and the four-wave mixing properties of QD semiconductor optical amplifiers, in particular emphasizing the role of ultrafast gain dynamics
54 citations