Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: In this paper, an InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror.
Abstract: We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 µm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 °C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.
51 citations
TL;DR: In this article, the authors describe the principle of operation of an all-optical flip-flop based on dispersive bistability in a distributed feedback semiconductor optical amplifier.
Abstract: We describe the principle of operation of an all-optical flip-flop based on dispersive bistability in a distributed feedback semiconductor optical amplifier. Cross-phase modulation controls the photonic bandgap and Bragg resonances of the amplifier, thereby shifting the hysteresis and switching thresholds to higher or lower powers. We give the details of a simple theoretical model that is used to simulate the set and reset operations. We also experimentally investigate the dependence on set-signal power and the response to back-to-back set signals, and we apply the theoretical model to understand these experimental results.
51 citations
TL;DR: In this article, the authors present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting laser (VCSEL) stabilizes the polarization of the emitted light.
Abstract: We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by asymmetric current injection are considered to explain this effect. The design scheme opens perspectives to obtain actual polarization control in VCSELs.
51 citations
Book•
01 Jan 1996
TL;DR: The basic principles of optical amplification in Semiconductor laser Diodes are discussed in this paper, where the transverse modal field and gain and saturation properties of SLS amplifiers are investigated.
Abstract: Basic Principles of Optical Amplifiers Optical Amplification in Semiconductor Laser Diodes Analysis of Transverse Modal Field in Semiconductor Laser Amplifiers Analysis and Modelling of Semiconductor Laser Amplifiers: Gain and Saturation Characteristics Analysis and Modelling of Semiconductor Laser Amplifiers: Noise Characteristics Experimental Studies on Semiconductor Laser Amplifiers.
51 citations
TL;DR: In this article, the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts, leading to an enhanced bandwidth and desirable switching properties.
Abstract: We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.
51 citations