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Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: In this article, the authors present an explanation of the optical gain and differential gain of two types of self-assembled quantum dots in the laser active region, which shows 1.16 and 1.31 μm spontaneous emission from the ground state at room temperature.
Abstract: This letter presents an explanation of the optical gain and differential gain of two types of self-assembled quantum dots in the laser active region, which shows 1.16 and 1.31 μm spontaneous emission from the ground state at room temperature. The gain spectrum was measured using the Hakki–Paoli method up to the lasing threshold. The maximum optical gain of the ground state was found to be 150–400 cm−1 and the differential gain to be 3×10−15–1×10−16 cm2, which agrees quite well with the calculation, taking into account both homogeneous broadening and inhomogeneous broadening. Our results will be a guide to the design of laser structures.
45 citations
TL;DR: In this article, the relationship between threshold current and optical confinement factor was investigated in order to minimize the beam divergence angle perpendicular to the junction plane (θ⊥), and it was found that θ ⊥ decreased with reduction of the optical confinement factors, whereas threshold current density increased.
Abstract: High-power blue-violet laser diodes with aspect ratio as low as 2.3 and threshold current down to 33 mA have been realized. The relationship between threshold current and optical confinement factor was investigated in order to minimize the beam divergence angle perpendicular to the junction plane (θ⊥). θ⊥ was found to decrease with reduction of the optical confinement factor, whereas threshold current density increased. A new layer structure, in which a p-typed cladding layer was located next to an AlGaN electron blocking layer, and a GaInN guiding layer was inserted between the active and the AlGaN electron blocking layer, was effective for obtaining small θ⊥ while maintaining low threshold current.
45 citations
TL;DR: In this article, a quantum Maxwell-Bloch equation (QMBE) for spatially inhomogeneous semiconductor laser devices is derived from fully quantum mechanical operator dynamics describing the interaction of the light field with the quantum states of the electrons and the holes near the band gap.
Abstract: We present quantum Maxwell-Bloch equations (QMBE) for spatially inhomogeneous semiconductor laser devices. The QMBE are derived from fully quantum mechanical operator dynamics describing the interaction of the light field with the quantum states of the electrons and the holes near the band gap. By taking into account field-field correlations and field-dipole correlations, the QMBE include quantum noise effects, which cause spontaneous emission and amplified spontaneous emission. In particular, the source of spontaneous emission is obtained by factorizing the dipole-dipole correlations into a product of electron and hole densities. The QMBE are formulated for general devices, for edge emitting lasers and for vertical cavity surface emitting lasers, providing a starting point for the detailed analysis of spatial coherence in the near-field and far-field patterns of such laser diodes. Analytical expressions are given for the spectra of gain and spontaneous emission described by the QMBE. These results are applied to the case of a broad area laser, for which the frequency and carrier density dependent spontaneous emission factor $\ensuremath{\beta}$ and the evolution of the far-field pattern near threshold are derived.
45 citations
TL;DR: In this paper, the existence of stable dissipative spatial solitons at low intensities in patterned electrode semiconductor optical amplifiers (SOAs) is predicted theoretically, and it is shown that the inherent saturating losses provide subcritical bifurcations for both the plane wave and the soliton solution.
Abstract: The existence of stable dissipative spatial solitons at low intensities in patterned electrode semiconductor optical amplifiers (SOAs) is predicted theoretically. In contrast to conventional SOAs, this system may support stable solitons because the inherent saturating losses provide subcritical bifurcations for both the plane-wave and the soliton solution.
45 citations
Patent•
09 May 1995TL;DR: In this paper, the polarization mode of oscillation light from a semiconductor laser is switchable between two different polarization modes when a modulation current is injected into a portion of a light waveguide of the semiconductor LM.
Abstract: In a light source apparatus, the polarization mode of oscillation light from a semiconductor laser is switchable between two different polarization modes when a modulation current is injected into a portion of a light waveguide of the semiconductor laser. Light in one polarization mode and light in the other polarization mode are separately obtained from the oscillation light from the semiconductor laser. At least the light in one of the two different polarization modes is converted to an electric signal. Current injected into the semiconductor laser is controlled based on the electric signal such that a modulation state of light from the semiconductor laser is stabilized. The light in the other polarization mode, or light in one polarization mode emitted from the other emission side of the semiconductor laser may be used for optical transmission.
45 citations