Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this article, the optical bistability of a vertical-cavity semiconductor optical amplifier (VCSOA) operated in reflection is investigated and the dependences of the optical Bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed.
Abstract: The characteristics of optical bistability in a vertical-cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA's top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.
45 citations
••
TL;DR: In this article, a method for the calculation of optical modes in disk-like resonant cavities is presented, and the eigenvalue equation for resonant wavelengths and threshold optical gain as well as the optical field distribution is established.
Abstract: A method for the calculation of optical modes in disk-like resonant cavities is presented. The eigenvalue equation for resonant wavelengths and threshold optical gain as well as the optical field distribution is established. The characteristics of the optical modes in microdisk lasers are studied using this method. Numerical calculations are carried out for some long wavelength microdisk lasers. The theoretical analyses and numerical results show that the optical modes in a microdisk laser with a very small thickness can be approximately classified into transverse electric and transverse magnetic modes, but the lasing modes and other lower threshold modes are transverse electric polarized, and a spontaneous emission coefficient between 0.2 and 0.3 can be achieved in long wavelength semiconductor microdisk lasers. The possibility of a microdisk laser to lase in a surface emitting mode is also demonstrated.
45 citations
••
PARC1
TL;DR: In this article, an analysis of gain-guided diode laser at threshold is presented and the effects of charge induced real refractive index antiguiding and gain-charge density relations are studied in detail.
Abstract: An analysis of gain-guided diode lasers at threshold is presented. After describing the formulation, the effects of charge induced real refractive index antiguiding and gain-charge density relations are studied in detail. Their influence on the threshold current, modal distributions, and the lateral fax-field radiation patterns is discussed. Next a "model" laser is defined and each parameter including dimensions, compositions, stripewidth, diffusion constants, current spreading resistance, and facet reflectivities is individually varied to determine the resulting modifications in laser properties.
44 citations
••
TL;DR: Bohringer et al. as mentioned in this paper proposed a full-time-domain approach to spatio-temporal dynamics of semiconductor laser systems, which can reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers and stimulated recombination from states near the band edge.
44 citations
••
TL;DR: In this paper, the width of the bistability loop may be enhanced by increasing the injection power of a vertical cavity surface-emitting semiconductor laser subject to optical injection.
Abstract: Pure frequency-polarisation bistability in a vertical cavity surface-emitting semiconductor laser subject to optical injection has been observed. It was found that the width of the bistability loop may be enhanced by increasing the injection power.
44 citations