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Semiconductor ring laser

About: Semiconductor ring laser is a(n) research topic. Over the lifetime, 327 publication(s) have been published within this topic receiving 4443 citation(s). The topic is also known as: SRL.
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Journal ArticleDOI
11 Nov 2004-Nature
TL;DR: Simulations show that the ring lasers with extremely small size and low operating power presented here have the potential for much smaller dimensions and switching times, and large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit.
Abstract: The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information1. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data2. Recently, ring lasers with extremely small size and low operating power have been made3,4,5,6,7, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40 µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

585 citations


Journal ArticleDOI
Abstract: Theory and experiments of single-mode ridge waveguide GaAs-AlGaAs semiconductor ring lasers are presented. The lasers are found to operate bidirectionally up to twice the threshold, where unidirectional operation starts. Bidirectional operation reveals that just above threshold, the lasers operate in a regime where the two counterpropagating modes are continuous wave. As the injected current is increased, a new regime appears where the intensities of the two counterpropagating modes undergo alternate sinusoidal oscillations with frequency in the tens of megahertz range. The regime with alternate oscillations was previously observed in ring lasers of the gas and dye type, and it is here reported and investigated in semiconductor ring lasers. A theoretical model based on a mean field approach for the two counterpropagating modes is proposed to study the semiconductor ring laser dynamics. Numerical results are in agreement with the regime sequence experimentally observed when the injected current is increased (i.e., bidirectional continuous-wave, bidirectional with alternate oscillations, unidirectional). The boundaries of the different regimes are studied as a function of the relevant parameters, which turn out to be the pump current and the conservative and dissipative scattering coefficients, responsible for an explicit linear coupling between the two counterpropagating field modes. By a fitting procedure, we obtain good numerical agreement between experiment and theory, and also an estimation for the otherwise unknown scattering parameters.

231 citations


Journal ArticleDOI
Abstract: Large-diameter ridge-guided semiconductor lasers weakly coupled to a straight output waveguide show unidirectional operation and directional bistability at currents up to about twice the threshold. The direction of lasing in the ring may be controlled by biasing contacts at either end of the coupled guide.

168 citations


Journal ArticleDOI
Abstract: Semiconductor ring lasers have been fabricated in single quantum well material using electron-beam lithography and SiCl4 dry etching. CW operation has been achieved in 84 μm diameter rings at a threshold current of 24 mA. This low value makes the structure very suitable for monolithic integration in optoelectronic circuits.

121 citations


Journal ArticleDOI
15 Nov 2002-Optics Letters
TL;DR: A bifurcation from bidirectional stable operation to a regime with alternate oscillations of the counterpropagating modes was observed experimentally and is theoretically explained through a two-mode model.
Abstract: We report on fabrication and characterization of single-longitudinal- and transverse-mode semiconductor ring lasers. A bifurcation from bidirectional stable operation to a regime with alternate oscillations of the counterpropagating modes was observed experimentally and is theoretically explained through a two-mode model. Analytical expressions for the onset and the frequency of the oscillations are derived, and L I curves numerically evaluated. Good quantitative agreement between theory and measurements made over a large number of tested devices is obtained. © 2002 Optical Society of America OCIS codes: 140.3560, 230.3120, 190.3100.

113 citations


3


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20212
20207
20198
201812
20175
201611

Top Attributes

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Topic's top 5 most impactful authors

Marc Sorel

65 papers, 1.1K citations

Siyuan Yu

50 papers, 583 citations

Jan Danckaert

38 papers, 691 citations

Gabor Mezosi

34 papers, 395 citations

Zhuoran Wang

33 papers, 387 citations