Sensitivity (electronics)

Abstract: A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic “dual” of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 × 10 −5 e / hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/ f -noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 ℏ.

Abstract: A monolithic 1.9-GHz, 198-mW, 0.6-/spl mu/m CMOS receiver which meets the specifications of the Digital Enhanced Cordless Telecommunications (DECT) standard is described. All of the RF, IF, and baseband receiver components, with the exception of the frequency synthesizers, have been integrated into a single chip solution. A description is given of a wide-band IF with double conversion architecture which eliminates the need for the discrete-component noise and IF filters in addition to facilitating the eventual integration of the frequency synthesizer blocks with on-chip VCO's. The prototype device utilizes a 3.3-V supply and includes a low noise amplifier, an image-rejection mixer, and two quadrature baseband signal paths each of which includes a second-order Sallen and Key anti-alias filter, an eighth-order switched-capacitor filter network followed by a 10-b pipelined analog-to-digital converter (ADC). The experimental device has a measured receiver reference sensitivity of -90 dBm, an input referred IP3 of -7 dBm, a P/sub -1 dB/ of -24 dBm, and an image-rejection ratio of -55 dBc across the DECT bands.

Abstract: A touch surface device having improved sensitivity and dynamic range is disclosed. In one embodiment, the touch surface device includes a touch-sensitive panel having at least one sense node for providing an output signal indicative of a touch or no-touch condition on the panel; a compensation circuit, coupled to the at least one sense node, for generating a compensation signal that when summed with the output signal removes an undesired portion of the output signal so as to generated a compensated output signal; and an amplifier having an inverting input coupled to the output of the compensation circuit and a non-inverting input coupled to a known reference voltage.

Abstract: Apparatus and methods are provided for multiple detection of analytes employing semiconductor capacitance as the signal modulated by the analyte. A plurality of semiconductor capacitors are organized for detection (at individual sites) of changes in capacitance which are related to changes in a fluid medium, where the change can be related to the presence of an analyte. Circuitry is designed to substantially maximize sensitivity.