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Sessile drop technique

About: Sessile drop technique is a research topic. Over the lifetime, 2827 publications have been published within this topic receiving 68943 citations.


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Journal ArticleDOI
TL;DR: In this paper, the sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials, including Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials.

75 citations

Journal ArticleDOI
TL;DR: In this article, a sessile drop method was used to estimate the modified contact angle of pure Mg droplets on pure Ti substrate, taking the morphological changes of the droplet outline due to the evaporation into consideration.

75 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the wetting behavior and reactions of different metals on Si3N4 using sessile drop measurements, analysis of reaction layers, and measurements of strength of joined bars.
Abstract: We investigated the wetting behavior and reactions of different metals on Si3N4 using sessile drop measurements, analysis of reaction layers, and measurements of strengths of joined bars. Active metals, such as Al and Ti, and alloys that contain them react with Si3N4 and cause wetting and spreading at the interface. Al-Si3N4 reaction at 900°C produced a thin layer of Al2O3 at the interface. Reaction between Si3N4 and Ag-Cu-To braze alloys at 900°C resulted in a complex microstructure in the reaction zone that contained TiN and titanium silicides. Breaking strengths of Si3N4 bars joined with the Ag-Cu-Ti braze alloys were higher than those for Si3N4 joined with Al, primarily because of the better wetting by the Ag-Cu-Ti alloys. Nonreactive metals and alloys such as Sn, In, Ag-Cu, and Ag-Cu-Sn neither wet, spread, nor adhere to Si3N4 substrates.

75 citations

Journal ArticleDOI
05 May 2011-Langmuir
TL;DR: Analytical analysis indicates that contact line pinning represents frustration in surface free energy, and the equilibrium shape corresponds to a nondifferential minimum instead of a local minimum in the adhesion model.
Abstract: Contact angle hysteresis of a sessile drop on a substrate consists of continuous invasion of liquid phase with the advancing angle (θ(a)) and contact line pinning of liquid phase retreat until the receding angle (θ(r)) is reached. Receding pinning is generally attributed to localized defects that are more wettable than the rest of the surface. However, the defect model cannot explain advancing pinning of liquid phase invasion driven by a deflating bubble and continuous retreat of liquid phase driven by the inflating bubble. A simple thermodynamic model based on adhesion hysteresis is proposed to explain anomalous contact angle hysteresis of a captive bubble quantitatively. The adhesion model involves two solid–liquid interfacial tensions (γ(sl) > γ(sl)′). Young’s equation with γ(sl) gives the advancing angle θ(a) while that with γ(sl)′ due to surface rearrangement yields the receding angle θ(r). Our analytical analysis indicates that contact line pinning represents frustration in surface free energy, and the equilibrium shape corresponds to a nondifferential minimum instead of a local minimum. On the basis of our thermodynamic model, Surface Evolver simulations are performed to reproduce both advancing and receding behavior associated with a captive bubble on the acrylic glass.

75 citations

Journal ArticleDOI
TL;DR: In this article, the wettability of carbon materials by molten silicon was investigated at 1430∘C under vacuum by using the dispensed drop variant of the sessile drop technique.
Abstract: The wettability of carbon materials by molten silicon was investigated at 1430∘C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed.

74 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202354
2022106
202189
2020105
2019100
2018116