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Showing papers on "Silicon carbide published in 2020"



Journal ArticleDOI
TL;DR: In this article, the hardness and wear properties of pure ceramic particles like silicon carbide, boron carbide and graphite are considered in micron size with the reinforced aluminium LM30 m.
Abstract: In this paper, the hardness and wear properties of pure ceramic particles like silicon carbide, boron carbide and graphite are considered in micron size with the reinforced aluminium LM30 m...

112 citations


Journal ArticleDOI
TL;DR: The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate with all the major device manufacturers releasing different technology variants ranging from SiC Trench MOSFETs, SiC Planar MOSFs, cascode-driven WBG Fets, silicon NPT and Field-stop IGBTs, silicon super-junction MOSfETs and enhancement mode GaN high electron mobility transistors (HEMTs).
Abstract: The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and at the higher end of the automotive medium-voltage application spectrum (approximately 1 kV and above) the SiC power MOSFET looks set to topple the dominance of the Si insulated-gate bipolar transistor (IGBT). At very high voltages (4.5 kV, 6.5 kV and above) used for grid applications, the press-pack thyristor remains undisputed for current source converters and the press-pack IGBTs for voltage source converters. However, around 650 V, there does not seem to be a clear choice with all the major device manufacturers releasing different technology variants ranging from SiC Trench MOSFETs, SiC Planar MOSFETs, cascode-driven WBG FETs, silicon NPT and Field-stop IGBTs, silicon super-junction MOSFETs, standard silicon MOSFETs, and enhancement mode GaN high electron mobility transistors (HEMTs). Each technology comes with its unique selling point with gallium nitride (GaN) being well known for ultrahigh speed and compact integration, SiC is well known for high temperature, electro-thermal ruggedness, and fast switching while silicon remains clearly dominant in cost and proven reliability. This article comparatively assesses the performance of some of these technologies, investigates their body diodes, discusses device reliability, and avalanche ruggedness.

97 citations


Journal ArticleDOI
TL;DR: In this article, a free-standing and vertically aligned silicon carbide nanowires (SiCw)/functionalized boron nitride nanosheets (f-BNNS) framework through modified filtration strategy was used to construct an epoxy-based composites with highly enhanced through-plane thermal conductivity.
Abstract: The trend of miniaturization, integration and multi-function of modern electronics leads to the speedily increased power density which makes heat dissipation a crucial issue. Herein, epoxy based composites with highly enhanced through-plane thermal conductivity were successfully prepared by constructing a free-standing and vertically aligned silicon carbide nanowires (SiCw)/functionalized boron nitride nanosheets (f-BNNS) framework through modified filtration strategy. The synergetic effect between hybrid fillers ensured highly efficient channels for phonons in vertical direction that the maximum thermal conductivity reached 4.22 W/mK at a low hybrid filler loading of 21.9 vol%, increased by 1658% in comparison to that of pure epoxy. Due to the entanglement effect of SiCw/f-BNNS framework and the enhanced interface interaction by BNNS modification, the interfacial thermal resistance between filler/filler and filler/matrix were both reduced a lot compared with random dispersion method. Exceptional heat dissipation capability of the vertically orientated architecture was also demonstrated by theoretical simulation and chip encapsulation applications. In addition, the coefficient of thermal expansion of composite reached as low as 41.1 ppm/°C, only half of the epoxy resin (83.5 ppm/°C). This work provides a novel strategy for fabricating polymer based composites with superior through-plane thermal conductivity in thermal management applications.

88 citations


Journal ArticleDOI
TL;DR: In this article, a group of shear horizontal (SH0) mode resonators and filters using LiNbO3 thin films on silicon carbide (SiC) were demonstrated.
Abstract: This work demonstrates a group of shear horizontal (SH0) mode resonators and filters using lithium niobate (LiNbO3) thin films on silicon carbide (SiC). The single-crystalline X-cut LiNbO3 thin films on 4H-SiC substrates have been prepared by ion-slicing and wafer-bonding processes. The fabricated resonator has demonstrated a large effective electromechanical coupling (k 2 ) of 26.9% and a high-quality factor (BodeQ) of 1228, hence resulting in a high figure of merit (FoM = k 2 · BodeQ) of 330 at 2.28 GHz. Additionally, these fabricated resonators show scalable resonances from 1.61 to 3.05 GHz and impedance ratios between 53.2 and 74.7 dB. Filters based on demonstrated resonators have been demonstrated at 2.16 and 2.29 GHz with sharp roll-off and spurious-free responses over a wide frequency range. The filter with a center frequency of 2.29 GHz shows a 3-dB fractional bandwidth of 9.9%, an insertion loss of 1.38 dB, an out-of-band rejection of 41.6 dB, and a footprint of 0.75 mm 2 . Besides, the fabricated filters also show a temperature coefficient of frequency of -48.2 ppm/°C and power handling of 25 dBm. Although the power handling is limited by arc discharge and migration-induced damage of the interdigital electrodes and some ripples in insertion loss and group delay responses are still present due to the transverse spurious modes, the demonstrations still show that acoustic devices on the LiNbO3-on-SiC platform have great potential for radio-frequency applications.

88 citations


Journal ArticleDOI
TL;DR: In this paper, the authors presented the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity, which achieved a Purcell factor of ∼50, which manifested as increased photoluminescence into the zero-phonon line.
Abstract: Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. Subsequent coupling to a single divacancy leads to a Purcell factor of ∼50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground-state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance toward scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

85 citations


Journal ArticleDOI
15 Dec 2020
TL;DR: In this article, a discussion on how silicon carbide photonics can enable the quantum technologies of the future is presented, and a discussion of how to use photonic materials in quantum computing is presented.
Abstract: A discussion on how silicon carbide photonics can enable the quantum technologies of the future is presented.

83 citations


Journal ArticleDOI
TL;DR: In this article, a quadruplet ZrB2-SiC-ZrC-Cf ultra-high temperature ceramic matrix composites (UHTCMC) with a constant 4:1 volume ratio was selected as the baseline.

79 citations


Journal ArticleDOI
TL;DR: In this article, the effects of silicon carbide (SiC) as the most important reinforcement phase on the densification percentage and mechanical characteristics of zirconium diboride (ZrB2)-matrix composites were studied.

71 citations


Journal ArticleDOI
TL;DR: In this paper, the authors used silicon carbide nanowires, reduced graphene oxide and cellulose nanofiber as assembly units to construct vertically aligned filler networks by ice-templated assembly strategy.
Abstract: Ice-templated assembly strategy is an effective method to construct filler networks. The filler networks can be used to increase the thermal conductivity of polymer composites. Herein, silicon carbide nanowires, reduced graphene oxide and cellulose nanofiber were used as assembly units to construct vertically aligned filler networks by ice-templated assembly strategy. Polydimethylsiloxane grafted with poly(ethylene glycol) could enhance the interfacial interaction and improve the wettability between silicone rubber and the filler networks. Silicon carbide/reduced graphene oxide/silicone rubber composites were prepared by infiltrating the filler networks with silicone rubber. The thermal conductivity of the composites increased with increasing the contents of silicon carbide and reduced graphene oxide. The thermal conductivity of the composite with 1.84 vol% filler network was as high as 2.74 W/(m·K), exhibiting significant enhancement of thermal conductivity of 16 times compared with silicone rubber. This work provides an insight for preparing highly thermally conductive silicone rubber composites.

68 citations


Journal ArticleDOI
20 Sep 2020
TL;DR: In this article, a commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding 107.1 million, and observe low-threshold (8.5±0.5mW) optical parametric oscillation using the fundamental mode as well as optical microcombs spanning 200 nm using a higher-order mode.
Abstract: Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding 107. We fabricate multimode microring resonators with quality factors as high as 1.1 million, and observe low-threshold (8.5±0.5mW) optical parametric oscillation using the fundamental mode as well as optical microcombs spanning 200 nm using a higher-order mode. Our demonstration is an essential milestone in the development of photonic devices that harness the unique optical properties of SiC, paving the way toward the monolithic integration of nonlinear photonics with spin-based quantum technologies.


Journal ArticleDOI
Guojiao Ding1, Rujie He1, Keqiang Zhang1, Niping Zhou1, Hao Xu 
TL;DR: In this article, a SiC ceramic optical mirror was fabricated using stereolithography 3D printing combined with polymer burnout, pre-sintering, and precursor infiltration and pyrolysis (PIP).

Journal ArticleDOI
TL;DR: In this article, the authors focused on the latest advancements in SiC and SiC composites used for the preparation of substrates and thin films in filters and membranes, and addressed the potential applications in gas and liquid separation processes, coupled with thermal/chemical stability properties.

Journal ArticleDOI
TL;DR: In this article, the authors summarized the development of SiC ceramics based on microstructural characteristics, self-lubrication methods, surface characteristics and external factors, and provided some reference for the design of high wear resistance and low friction.

Journal ArticleDOI
TL;DR: In this paper, a study on fabricating Al7075 metal matrix composites (MMC) with silicon carbide ceramic particles and various other solid lubricants for application in the development of piston.
Abstract: The study focuses on fabricating Al7075 metal matrix composites (MMC) with silicon carbide ceramic particles and various other solid lubricants for application in the development of piston. The composition of the casted specimen is 90 wt.% Al7075 alloy as well as 5 wt.% of SiC, which has to be kept as constant, and varying the type of the solid lubricants: graphite, hexagonal boron nitride (hBN), and molybdenum disulfide (MoS2) with 5 wt.%. Hybrid Al7075 composites are successfully fabricated through the stir casting process. The casted specimens are machined for the necessary testing as per the ASTM standards. The mechanical properties like tensile strength, compression strength, and hardness of the fabricated composites are evaluated by conducting experimental tests while the wear properties were evaluated via the pin-on-disc method. The results are compared to assess the best combination of solid lubricants for piston applications. The results indicate that Al7075 with 5 wt.% SiC and 5 wt.% graphite composite outperformed all other hybrid composites by evincing excellent mechanical and tribological properties; this might be due to the synergic effect of graphite with the Al7075 –SiC MMC.

Journal ArticleDOI
TL;DR: In this article, the characterization of Al-Si alloy-based metal matrix composites that are reinforced with silicon carbide and chromium is performed with the help of scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction analysis (XRD), microhardness test, tensile test, sliding wear test, scratch test, and porosity analysis.
Abstract: The cast aluminum-silicon alloys are used to make various automobile components like pistons, cylinder blocks, piston insert rings, connecting rod, brake disc, etc. but low strength, hardness, and wear resistance restricted their use in several applications. Silicon carbide reinforced aluminum matrix composites exhibit better properties than base metal alloys. As an alloying element, the chromium improves the hardness, strength, and elastic limit of the steel. In this study, the characterization of Al-Si alloy-based metal matrix composites that are reinforced with silicon carbide and chromium is performed with the help of scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction analysis (XRD), microhardness test, tensile test, sliding wear test, scratch test, and porosity analysis. The aluminum matrix composites with a varying weight percent of chromium (0-3 wt.% in steps of 1.5) and a fixed percentage of silicon carbide (10%) were formulated through the vortex casting process. The SEM and EDS images illustrate the occurrence and somewhat uniform dispersion of the reinforcement particulates. In hybrid composites, the Cr3C2 compound formation is observed with the least intensity. The reinforcement content contributes significantly to improve the hardness, strength, abrasion resistance, and wear resistance along with a modest reduction in the ductility and gain in friction coefficient. The porosity level obtained in the composites revealed that composites are free from casting defects.

Journal ArticleDOI
TL;DR: In this paper, an efficient sintering additive method was proposed to address the issue of high temperature during the preparation of porous silicon carbide (SiC) membranes, which is a challenge for transfer of the technology from the laboratory to industry.

Journal ArticleDOI
TL;DR: In this article, a study on preparation of copper-Graphite-Silicon-Carbide hybrid metal matrix composite by stir casting technique is presented. And it is spontaneously expected that present composite will be highly beneficial in structural and mechanical applications.

Journal ArticleDOI
TL;DR: In this article, thin films composed of Ni nanoparticles (NPs) were uniformly coated onto the hollow silicon carbide spheres by Pd activated alkaline electroless plating technique.

Journal ArticleDOI
TL;DR: In this article, an in-situ epitaxial graphene (EG) strategy is adopted to activate the electrochemically inactive silicon carbide (SiC) by constructing Schottky junction for high-performance anode of lithium-ion battery (LIB).

Journal ArticleDOI
TL;DR: In this paper, the authors present a comprehensive analysis of thermal material properties determining the temperature distribution inside SiC power mosfet s using a calibrated technology computer-aided design (TCAD) electrothermal model.
Abstract: Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to estimate the device temperature in operation, typically assuming a constant thermal conductivity and/or heat capacity of the SiC material. Whether and by how much the accuracy of the resulting device temperature prediction under these assumptions is compromised has not been investigated so far. Focusing on high-temperature operating conditions as found under short circuit (SC), this paper presents a comprehensive analysis of thermal material properties determining the temperature distribution inside SiC power mosfet s. Using a calibrated technology computer-aided design (TCAD) electrothermal model, it is demonstrated that the temperature prediction of SiC power devices under SC operation when neglecting either the top metallization or the temperature dependence of the heat capacity is inaccurate by as high as 25%. The presented analysis enables to optimize compact electrothermal models in terms of accuracy and computational time, which can be used to assess the maximum temperature of SiC power mosfet s in both discrete packages and multichip power modules exposed to fast thermal transients. A one-dimensional thermal network of a SiC power mosfet is proposed based on the thermal material properties, the size of the active area of the device, and its thickness.

Journal ArticleDOI
TL;DR: The application of VA-SiC/epoxy composite as an efficient thermal dissipating material has been presented and has strong potential for preparing heat-dissipating components in integrated microelectronics.
Abstract: Owing to the growth of demand for highly integrated electronic devices, high heat dissipation of thermal management materials is essential. Epoxy composites have been prepared with vertically aligned (VA) three-dimensional (3D)-structured SiC sheet scaffolds. The required VA-SiC sheet scaffolds were prepared by a novel approach starting with a graphene oxide (GO) scaffold. The VA-GO scaffolds were reduced to VA-graphene scaffolds in an argon environment, and the latter were subsequently transformed into VA-SiC sheet scaffolds by a template-assisted chemical vapor deposition method. Epoxy resin was filled in the empty spaces of the 3D scaffold of SiC sheets to prepare the composite mass. The material so prepared shows anisotropic thermal property with ultrahigh through-plane conductivity of 14.32 W·m-1·K-1 at a SiC sheet content of 3.71 vol %. A thermal percolation is observed at 1.78 vol % SiC filler. The SiC sheet scaffold of covalently interconnected SiC nanoparticles plays a vital role in the formation of the thermal conductive network to significantly enhance the thermal conductivity of epoxy composites. The application of the VA-SiC/epoxy composite as an efficient thermal dissipating material has also been presented. The VA-SiC/epoxy composites have a strong potential for preparing heat-dissipating components in integrated microelectronics.

Journal ArticleDOI
TL;DR: Insight is provided into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties and potential synthesis approaches that can be used to grow 2D silicon carbide are discussed.
Abstract: As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

Journal ArticleDOI
TL;DR: In this paper, SiO2 was evenly coated on dry yeast as a biological template by sol-gel method, and the internal substances of yeast were removed at 700°C to obtain hollow silicon template.


Journal ArticleDOI
TL;DR: In this article, the use of aluminum oxide (Al2O3) doped with unmilled silicon carbide (SiCUM) nanoparticles and milled Silicon carbide nanoparticles dispersed in distilled water (DW) and ethylene glycol (EG) at 50:50 volumetric proportions was experimented in this work.
Abstract: Innovative heat elimination technologies from the radiator are needed for weight reduction in an automotive vehicle to increase the overall performance. The fluids used nowadays are based on a combination of distilled water (DW) and ethylene glycol (EG), and also using nanofluids for improving heat transfer performance has been increased within the last couple of years. The use of aluminum oxide (Al2O3) doped with unmilled silicon carbide (SiCUM) nanoparticles and milled Silicon carbide (SiCM) nanoparticles dispersed in DW and EG at 50:50 volumetric proportions experimented in this work. The focus for the important characterization of the nf which includes thermophysical properties is elaborated in this paper. The outcomes showed an optimum improvement regarding the overall thermal performance of 28.34 % making use of Al2O3 doped with milled Silicon carbide(SiCM) at a volume concentration of 0.8 %. This might be due to the size reduction of SiC nanoparticles by the milling process involved in this experiment.

Journal ArticleDOI
TL;DR: In this paper, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of reaction-bonded silicon carbide (RB-SiC) were examined.
Abstract: Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix.

Journal ArticleDOI
TL;DR: In this paper, a commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding $10^7$.
Abstract: Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding $10^7$. We fabricate microring resonators with quality factors as high as 1.1 million, and observe low-threshold (8.5 $\pm$ 0.5 mW) optical parametric oscillation as well as optical microcombs spanning 200 nm. Our demonstration is an essential milestone in the development of photonic devices that harness the unique optical properties of SiC, paving the way toward the monolithic integration of nonlinear photonics with spin-based quantum technologies.