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Silicon carbide

About: Silicon carbide is a research topic. Over the lifetime, 35003 publications have been published within this topic receiving 408228 citations. The topic is also known as: carbon silicide & Carborundum.


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Journal ArticleDOI
07 Nov 2002
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Abstract: The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range. However practical operation of silicon power devices at ambient temperatures above 200/spl deg/C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

863 citations

Journal ArticleDOI
K. H. Jack1
TL;DR: Sialons as mentioned in this paper are phases in the Si-Al-O-N and related systems and are comparable in variety and diversity with the mineral silicates, and are built up of one-, two-, and threedimensional arrangements of (Si, Al) (O, N)4 tetrahedra.
Abstract: Although silicon nitride is at present a leading contender for gas turbines and other hightemperature engineering applications, it is only the first of a wide field of nitrogen ceramics, other members of which offer better prospects for technological exploitation. “Sialons” are phases in the Si-Al-O-N and related systems and are comparable in variety and diversity with the mineral silicates. They are built up of one-, two-, and threedimensional arrangements of (Si, Al) (O, N)4 tetrahedra in the same way that the fundamental structural unit in the silicates is the SiO4 tetrahedron. These new oxynitrides include structure types based uponα andΒ silicon nitrides, silicon oxynitride, aluminium nitride and silicon carbide, eucryptite, spinel, melilite and apatite. They are being explored for their thermal, mechanical, chemical and electrical properties.

838 citations

Journal ArticleDOI
TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Abstract: Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

806 citations

Journal ArticleDOI
TL;DR: In this paper, the authors derived the Baliga high-frequency figure of merit for power semiconductor devices operating in high frequency circuits and showed that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.
Abstract: A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the power losses incurred in the power device will increase as the square root of the operating frequency and approximately in proportion to the output power. By relating the device power dissipation to the intrinsic material parameters, it is shown that the power loss can be reduced by using semiconductors with larger mobility and critical electric field for breakdown. Examination of data in the literature indicates that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond. >

776 citations

Journal ArticleDOI
21 Jul 2017-Science
TL;DR: The combined theoretical and experimental results demonstrate a concept for a quantum spin Hall wide-gap scenario, where the chemical potential resides in the global system gap, ensuring robust edge conductance.
Abstract: Quantum spin Hall materials hold the promise of revolutionary devices with dissipationless spin currents but have required cryogenic temperatures owing to small energy gaps. Here we show theoretically that a room-temperature regime with a large energy gap may be achievable within a paradigm that exploits the atomic spin-orbit coupling. The concept is based on a substrate-supported monolayer of a high–atomic number element and is experimentally realized as a bismuth honeycomb lattice on top of the insulating silicon carbide substrate SiC(0001). Using scanning tunneling spectroscopy, we detect a gap of ~0.8 electron volt and conductive edge states consistent with theory. Our combined theoretical and experimental results demonstrate a concept for a quantum spin Hall wide-gap scenario, where the chemical potential resides in the global system gap, ensuring robust edge conductance.

766 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023894
20221,875
2021886
20201,345
20191,822
20181,709