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Silicon carbide

About: Silicon carbide is a research topic. Over the lifetime, 35003 publications have been published within this topic receiving 408228 citations. The topic is also known as: carbon silicide & Carborundum.


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Patent
02 Feb 1988
TL;DR: In this article, the authors proposed to prevent leakage currents even under severe conditions such as a high temperature, large power, etc., by forming a first electrode onto the surface of an silicon carbide semiconductor layer.
Abstract: PURPOSE: To prevent leakage currents even under severe conditions such as a high temperature, large power, etc., by forming a first electrode onto the surface of an silicon carbide semiconductor layer shaped onto one surface of a substrate, a second electrode onto the other surface of the substrate and a third electrode onto the side face of the silicon carbide semiconductor layer. CONSTITUTION: A nickel film formed onto the rear of an silicon substrate 1 is used as a drain electrode 7, and a titanium-aluminum film shaped onto the projecting end face of an silicon carbide growth layer 2 having mesa structure is employed as a source electrode 6. Currents flowing between the source electrode 6 and the drain electrode 7 are controlled by fluctuating voltage applied to gate electrodes 8 and changing the width of depletion layers 9 spreading in the silicon carbide growth layer 2. Accordingly, an silicon carbide semiconductor device, in which leakage currents are not generated even under severe conditions such as a high temperature, large power, etc., and which has excellent characteristics, can be acquired. COPYRIGHT: (C)1989,JPO&Japio

481 citations

Journal ArticleDOI
TL;DR: In this article, an analytical bond-order potential for silicon, carbon, and silicon carbide is presented, which has been optimized by a systematic fitting scheme, and is built on three independently fitted potentials for the interaction of silicon and carbon.
Abstract: We present an analytical bond-order potential for silicon, carbon, and silicon carbide that has been optimized by a systematic fitting scheme. The functional form is adopted from a preceding work [Phys. Rev. B 65, 195124 (2002)] and is built on three independently fitted potentials for $\mathrm{Si}\mathrm{Si}$, $\mathrm{C}\mathrm{C}$, and $\mathrm{Si}\mathrm{C}$ interaction. For elemental silicon and carbon, the potential perfectly reproduces elastic properties and agrees very well with first-principles results for high-pressure phases. The formation enthalpies of point defects are reasonably reproduced. In the case of silicon stuctural features of the melt agree nicely with data taken from literature. For silicon carbide the dimer as well as the solid phases B1, B2, and B3 were considered. Again, elastic properties are very well reproduced including internal relaxations under shear. Comparison with first-principles data on point defect formation enthalpies shows fair agreement. The successful validation of the potentials for configurations ranging from the molecular to the bulk regime indicates the transferability of the potential model and makes it a good choice for atomistic simulations that sample a large configuration space.

476 citations

Journal ArticleDOI
TL;DR: Direct graphene growth over silicon nanoparticles without silicon carbide formation is reported, suggesting that two-dimensional layered structure of graphene and its siliconcarbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology.
Abstract: Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. The volume expansion of silicon is a big problem in lithium-ion batteries with silicon anodes. Here, the authors report direct graphene growth on silicon nanoparticles, which effectively mitigates the problem, leading to excellent electrochemical performance.

476 citations

Journal ArticleDOI
01 Jun 1976-Nature
TL;DR: In this article, the synthesis of continuous β-SiC fibres by a new process: the conversion of organometallic polymers to inorganic substances was studied, and the transformation process and the structure and mechanical properties of these fibres were studied.
Abstract: MUCH work has been done on preparing heat-resistant silicon carbide materials in fibrous form, since plastics or metals can be reinforced with them to obtain very heat-resistant material of great mechanical strength. SiC whiskers1 are, however, impractical because of their shortness (several mm), their non-uniform diameter and high cost of production. SiC-on-W (ref. 2) and SiC-on-C (ref. 3) filaments have been produced by chemical vapour methods. These coated filaments are more expensive, and the treatment for making such composite materials requires careful control. We report here on the synthesis of continuous β-SiC fibres by a new process: the conversion of organometallic polymers to inorganic substances. We have studied the transformation process and the structure and mechanical properties of these fibres.

464 citations

Journal ArticleDOI
TL;DR: The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics.
Abstract: After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the “furnace grown” graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods.

457 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023894
20221,875
2021886
20201,345
20191,822
20181,709