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Silicon

About: Silicon is a(n) research topic. Over the lifetime, 196073 publication(s) have been published within this topic receiving 3038411 citation(s). The topic is also known as: element 14 & Si.

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Papers
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Open accessBook
12 Jul 1985-
Abstract: VOLUME ONE: Determination of Optical Constants: E.D. Palik, Introductory Remarks. R.F. Potter, Basic Parameters for Measuring Optical Properties. D.Y. Smith, Dispersion Theory, Sum Rules, and Their Application to the Analysis of Optical Data. W.R. Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region. D.E. Aspnes, The Accurate Determination of Optical Properties by Ellipsometry. J. Shamir, Interferometric Methods for the Determination of Thin-Film Parameters. P.A. Temple, Thin-Film Absorplance Measurements Using Laser Colorimetry. G.J. Simonis, Complex Index of Refraction Measurements of Near-Millimeter Wavelengths. B. Jensen, The Quantum Extension of the Drude--Zener Theory in Polar Semiconductors. D.W. Lynch, Interband Absorption--Mechanisms and Interpretation. S.S. Mitra, Optical Properties of Nonmetallic Solids for Photon Energies below the Fundamental Band Gap. Critiques--Metals: D.W. Lynch and W.R. Hunter, Comments of the Optical Constants of Metals and an Introduction to the Data for Several Metals. D.Y. Smith, E. Shiles, and M. Inokuti, The Optical Properties of Metallic Aluminum. Critiques--Semiconductors: E.D. Palik, Cadium Telluride (CdTe). E.D. Palik, Gallium Arsenide (GaAs). A. Borghesi and G. Guizzetti, Gallium Phosphide (GaP). R.F. Potter, Germanium (Ge). E.D. Palik and R.T. Holm, Indium Arsenide (InAs). R.T. Holm, Indium Antimonide (InSb). O.J. Glembocki and H. Piller, Indium Phosphide (InP). G. Bauer and H. Krenn, Lead Selenide (PbSe). G. Guizzetti and A. Borghesi, Lead Sulfide (PbS). G. Bauer and H. Krenn, Lead Telluride (PbTe). D.F. Edwards, Silicon (Si). H. Piller, Silicon (Amorphous) (-Si). W.J. Choyke and E.D. Palik, Silicon Carbide (SiC). E.D. Palik and A. Addamiano, Zinc Sulfide (ZnS). Critiques--Insulators: D.J. Treacy, Arsenic Selenide (As 2 gt Se 3 gt ). D.J. Treacy, Arsenic Sulfide (As 2 gt S 3 gt ). D.F. Edwards and H.R. Philipp, Cubic Carbon (Diamond). E.D. Palik and W.R. Hunter, Litium Fluoride (LiF). E.D. Palik, Lithium Niobote (LiNbO 3 gt ). E.D. Palik, Potassium Chloride (KCl). H.R. Philipp, Silicon Dioxide (SiO 2 gt ), Type ( (Crystalline). H.R. Philipp, Silicon Dioxide (SiO 2 gt ) (Glass). gt H.R. Philipp, Silicon Monoxide (SiO) (Noncrystalline). H.R. Philipp, Silicon Nitride (Si 3 gt N 4 gt ) (Noncrystalline). J.E. Eldridge and E.D. Palik, Sodium Chloride (NaCl). M.W. Ribarsky, Titanium Dioxide (TiO 2 gt ) (Rutile).

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Topics: Silicon (50%), Germanium (50%)

17,477 Citations


Open accessJournal ArticleDOI: 10.1126/SCIENCE.1171245
Xuesong Li1, Weiwei Cai1, Jinho An1, Seyoung Kim1  +9 moreInstitutions (2)
05 Jun 2009-Science
Abstract: Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene, with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.

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  • Fig. 3. (A) Optical microscope image of a graphene FET. (B) Device resistance vs top-gate voltage (VTG) with different back-gate (VBG) biases and versus VTG-VDirac,TG (VTG at the Dirac point), with a model fit (solid line).
    Fig. 3. (A) Optical microscope image of a graphene FET. (B) Device resistance vs top-gate voltage (VTG) with different back-gate (VBG) biases and versus VTG-VDirac,TG (VTG at the Dirac point), with a model fit (solid line).
Topics: Graphene oxide paper (65%), Graphene nanoribbons (64%), Aerographene (63%) ...read more

9,917 Citations


Open accessBook
01 Jan 1940-
Abstract: 1. Introduction 2. Theory of Electrons in a Non-Crystalline Medium 3. Phonons and Polarons 4. The Fermi Glass and the Anderson Transition 5. Liquid Metals and Semimetals 6. Non-Crystalline Semiconductors 7. Tetrahedrally-Bonded Semiconductors - Amorphous Germanium and Silicon 8. Aresnic and Other Three-Fold Co-ordinated Materials 9. Chalcogenide and Other Glasses 10. Selenium, Tellurium, and their Alloys

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Topics: Chalcogenide (53%), Semiconductor (53%), Semimetal (52%) ...read more

7,993 Citations


Journal ArticleDOI: 10.1063/1.103561
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Topics: Quantum wire (55%), Band gap (53%), Silicon (53%) ...read more

7,284 Citations


Journal ArticleDOI: 10.1038/NNANO.2007.411
Candace K. Chan1, Hailin Peng1, Gao Liu2, Kevin McIlwrath3  +3 moreInstitutions (3)
Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

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Topics: Nanowire battery (62%), Lithium battery (62%), Lithium (58%) ...read more

5,578 Citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202294
20213,039
20204,653
20195,696
20186,165
20175,927

Top Attributes

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Topic's top 5 most impactful authors

Deren Yang

358 papers, 4K citations

Christophe Ballif

190 papers, 9.7K citations

Martin A. Green

168 papers, 9.7K citations

John E. Bowers

157 papers, 4K citations

Lorenzo Pavesi

150 papers, 8.9K citations

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