Showing papers on "Silicon published in 1978"
TL;DR: Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years and it will continue to gain stature and acceptance as standard processing technology in the next few years as discussed by the authors.
Abstract: Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of
898 citations
TL;DR: In this paper, the impurity distribution of the oxygen-implanted silicon substrate was analyzed by auger spectroscopy, and the epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.
Abstract: Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.
492 citations
TL;DR: In this article, the plasma etching of silicon and silicon dioxide in CF4-O2 mixtures has been studied as a function of feed-gas composition in a 13.56MHz plasmagenerated in a radial flow reactor at 200 W and 0.35 Torr.
Abstract: The plasma etching of silicon and silicon dioxide in CF4‐O2 mixtures has been studied as a function of feed‐gas composition in a 13.56‐MHz plasmagenerated in a radial‐flow reactor at 200 W and 0.35 Torr. Conversion of CF4 to stable products (CO, CO2, COF2, and SiF4) and the concentration of free F atoms ([F]) in the plasma were measured using a number of different diagnostics. The rate of etching, the concentration of F atoms, and the intensity of emission from electronically excited F atoms (3s 2 P–3p 2 P° transition at 703.7 nm) each exhibit a maximum value as a function of feed‐gas composition ([O2]); these respective maxima occur at distinct oxygen concentrations. For SiO2, the variation in etching rate with [O2] is accounted for by a proportional variation in [F], the active etchant. The etching of silicon also occurs by a reaction with F atoms, but oxygen competes with F for active surface sites. A quantitative model which takes oxygen adsorption into account is used to relate the etch rate to [F]. The initial increase of [F] with [O2] is accounted for by a sequence of reactions initiating with the production of CF3 radicals by electron impact and followed by a reaction of CF3 with oxygen. When [O2] exceeds ∼23% (under the present discharge conditions), [F] decreases due, probably, to a decrease in electron energy with an increase of oxygen in the feed gas.
482 citations
TL;DR: In this article, the authors measured the time resolved reflectivity at 0.63 μm from arsenic-implanted silicon crystals by a 1.06μm laser pulse of 50 ns duration and confirmed the formation of a metallic liquid phase at the crystal surface during the annealing process.
Abstract: The time‐resolved reflectivity at 0.63 μm from arsenic‐implanted silicon crystals has been measured during annealing by a 1.06‐μm laser pulse of 50‐ns duration. The reflectivity was observed to change abruptly to the value consistent with liquid silicon and to remain at that value for a period of time which ranged from a few tens of nanoseconds to several hundreds of nanoseconds, depending on the annealing pulse intensity. Concurrently, the transmission of the primary annealing beam dropped abruptly. These observations confirm the formation of a metallic liquid phase at the crystal surface during the annealing process.
310 citations
TL;DR: In this paper, the authors used the overlap damage model to determine the critical dose from the data, the size of the amorphous region around the ion track, and the degree of overlap damage required for amorphization.
Abstract: The transformation of silicon to the amorphous state by implanted ions was studied both experimentally and theoretically. Experimentally, the amount of transformed silicon and the critical ion dose necessary to amorphize the entire implanted layer were determined by ESR. How the critical dose varies with ion mass (Li, N, Ne, Ar, and Kr), ion energy (20–180 keV), and implant temperature (77–475 K) was determined. Theoretically, several phenomenological models were used to analyze these data. The overlap‐damage model was used to determine the critical dose from the data, the size of the amorphous region around the ion track, and the degree of overlap damage required for amorphization. For all implants, the first ion created only predamage, while the second or third ion into the same region caused the amorphous transformation. The critical‐energy‐density model was in good agreement with the measured critical doses. This model assumed that a region would become amorphous if the energy density deposited into atomic processes by the ions exceeded the critical energy density of 6×1023 eV/cm3. For high‐temperature implantations, out‐diffusion models can explain the temperature dependence of the critical dose. Although the analysis is not completely definitive, the critical‐energy‐density model may also be valid at high temperature if diffusion of the damage energy is taken into account. This out‐diffusion of energy from around the ion track occurs via a thermally activated process. Probably, the energy moves with the out‐diffusion of the vacancies from the ion track.
254 citations
PARC1
TL;DR: In this paper, the photoluminescence of amorphous silicon was investigated and the luminescence intensity and spectral line shape were shown to be sensitive to many deposition variables, in particular the power coupled into the discharge, the concentration of silane in the gas stream, and the deposition substrate temperature.
Abstract: The photoluminescence of plasma-deposited amorphous silicon is investigated. The luminescence intensity and spectral line shape are shown to be sensitive to many deposition variables, in particular the power coupled into the discharge, the concentration of silane in the gas stream, and the deposition substrate temperature. Maximum intensity is obtained in samples deposited with low power (\ensuremath{\sim}1 W), a silane concentration of \ensuremath{\gtrsim} 10% and a deposition temperature of 200-300\ifmmode^\circ\else\textdegree\fi{}C. ESR studies show that the luminescence intensity is determined by competing nonradiative transitions to localized defect states whose density varies with deposition conditions. The presence of defect states is related to the way hydrogen is incorporated into the samples, but the details of the defect structure are not yet clear. Oxygen impurities are observed to give a broad, weak luminescence peak centered near 1.1 eV. It is suggested that the active oxygen centers are similar to the charged defects postulated for chalcogenide glasses.
253 citations
TL;DR: In this article, secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon, showing that degradation of these films due to hydrogen out-diffusion at 100°C will not be significant until after more than 104 years.
Abstract: Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH4 at a substrate temperature of 315 °C, the diffusion data fits D (T) =1.17×10−2 exp(−1.53 eV/kT) cm2/s. This result implies that degradation of these films due to hydrogen out‐diffusion at 100 °C will not be significant until after more than 104 years.
250 citations
TL;DR: In this article, the authors investigated the grain growth phenomena of heavily phosphorus-implanted polycrystalline silicon films owing to high temperature annealing by transmission electron microscope and found that phosphorus doping in excess of is found to enhance grain growth.
Abstract: Grain growth phenomena of heavily phosphorus‐implanted polycrystalline silicon films owing to high temperature annealing are investigated by transmission electron microscope. Phosphorus doping in excess of is found to enhance grain growth. This growth is broken down into primary and secondary recrystallization. Isochronal annealing reveals the activation energies for these as 2.4 and 1.0 eV, respectively. The driving force of the primary recrystallization is found to be the interface energy. Therefore, the elementary process behind the primary recrystallization is attributed to silicon diffusion across the grain boundary region.
234 citations
TL;DR: In this article, the properties of boron-implanted silicon annealed by high power Q-switched ruby laser radiation are compared with results obtained by conventional thermal annealing.
Abstract: The properties of boron‐implanted silicon annealed by high‐power Q‐switched ruby laser radiation are compared with results obtained by conventional thermal annealing. Laser annealing of the implanted layer results in significantly increased electrical activity, as compared to thermally annealed implanted silicon. This correlates well with transmission electron microscopy and ion‐channeling measurements which show a dramatic removal of displacement damage as a result of laser annealing. A substantial redistribution of the implanted boron concentration profile occurs after laser annealing which cannot be explained by thermal diffusion in the solid.
196 citations
TL;DR: In this article, a simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation, and experimental data over the 2.5-20 µm wavelength and 5-500 Ω/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gases.
Abstract: Free carrier absorption in heavily doped layers reduces the useful photon flux in the photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation. Experimental data over the 2.5-20 µm wavelength and 5-500 Ω/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gases. The temperature dependence of both transmissivity and sheet resistance is investigated from 20 to 300 K.
193 citations
Patent•
23 Mar 1978
TL;DR: In this article, an undoped polycrystalline silicon layer is provided on an electrically insulating layer at the surface of a semiconductor body and a metal layer, for example of molybdenum, was provided on the silicon layer.
Abstract: PHN 9829 7 An undoped polycrystalline silicon layer is provided on an electrically insulating layer at the surface of a semiconductor body and a metal layer, for example of molybdenum, is provided on the silicon layer. After heating to convert part of the silicon layer into a metal silicide layer a dopant, for example phosphorus, is introduced into the polycrystalline layer through the silicide layer. This method can be used to make an insulated gate field effect device where the gate comprises a double layer structure of metal silicide on polycrystalline silicon.
TL;DR: Amorphous Si-N films have been synthesized from and by reactive plasma deposition at 275°C in an improved radial flow reactor as mentioned in this paper, which produces relatively thick (1 μm) crack-resistant Si−N films (at 450°−500°C) having excellent step coverage and good adhesion to both Au and Al metallization.
Abstract: Amorphous Si‐N films have been synthesized from and by reactive plasma deposition at 275°C in an improved radial flow reactor. With appropriate control of machine and process variables, films have been made with Si/N ratio of 0.75–1.5, density of 2.8‐2.2g cm−3, refractive index of 1.9–2.3, stress of compressive to tensile, and electrical resistivity at of 1020‐104 Ω‐cm. The process is MOS compatible and it produces relatively thick (1 μm) crack‐resistant Si‐N films (at 450°–500°C) having excellent step coverage and good adhesion to both Au and Al metallization. This paper describes the deposition technique, effect of deposition parameters on various film properties, and the advantages these films offer in silicon integrated circuit technology.
TL;DR: The structure of silicon films deposited by low pressure, chemical vapor deposition in the 600°C temperature range has been investigated by x-ray diffraction and transmission electron microscopy.
Abstract: The structure of silicon films deposited by low pressure, chemical vapor deposition in the 600°C temperature range has been investigated by x‐ray diffraction and transmission electron microscopy. There is a critical temperature near 600°C, above which the deposited films are polycrystalline and below which amorphous films are obtained. This temperature is close to that used to deposit films for integrated circuit applications. When the films are polycrystalline, the texture dominates. The polycrystalline films are reasonably stable upon annealing to temperatures up to approximately 1100°C. The initially amorphous films, however, easily crystallize. Crystallization has been observed to be well advanced after annealing at 800°C. Large stresses are built into the amorphous films, while the stresses in the polycrystalline films are lower.
TL;DR: In this article, a simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation, and experimental data over the 2.5-20 /spl mu/m wavelength and 5-500 Omega/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gates.
Abstract: Free carrier absorption in heavily doped layers reduces the useful photon flux in the photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation. Experimental data over the 2.5-20 /spl mu/m wavelength and 5-500 Omega/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gates. The temperature dependence of both transmissivity and sheet resistance is investigated from 20 to 300 K.
TL;DR: In this article, the authors employed XPS and UPS to examine the products induced by 500 eV N+2 beams on targets of elemental Si, SiO, and SiO2.
Abstract: Ion beam studies of chemical reactions between nitrogen and surfaces of silicon and its oxides are reported. A spectrometer system designed for these studies which combines the techniques of x‐ray and uv photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectroscopy, low energy electron diffraction, and ion bombardment is described. This work employs XPS and UPS to examine the products induced by 500 eV N+2 beams on targets of elemental Si, SiO, and SiO2. The N+2 ions undergo charge exchange and dissociation at the surface of the target to form hot N atoms. Reaction with Si, produces nitrides which are similar to those of the type Si3N4. Reaction with SiO and SiO2 forms nitrides, with no evidence of nitrate or nitrite formation. The chemical nature of the reaction is suggested by identification of the reaction products through XPS and UPS and energy level shifts. The thickness of the silicon nitride layer on Si(111) formed by 500 eV N+2 bombardment has been determined to be ∼19 A thick by using the film/bulk Si XPS intensity ratio. Estimates obtained by depth‐concentration profiling with 1 keV Ar+ and by using LSS projected ion range calculations agree with this approximate thickness.
PARC1
TL;DR: In this paper, the Raman spectra have been obtained from thin films of silicon-hydrogen and siliconhydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH 4/D2/Ar respectively.
Abstract: Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1_ x . In contrast, for material deposited on to a substrate at a temperature T s⩾250°C, the hydrogen is incorporated onto Si-sites containing predominantlv one H-atom.
TL;DR: In this article, the use of a laser as a tool for annealing of ion implantation damage is described, and electrical measurements show that activity comparable to that of a 1000 °C 30min anneal can be obtained.
Abstract: The use of a laser as a tool for annealing of ion‐implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000 °C 30‐min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.
TL;DR: In this paper, the authors demonstrate the unique capability of a repetitively pulsed laser to write a monocrystalline pattern in ion-implanted amorphous silicon layers.
Abstract: We demonstrate the unique capability of a repetitively pulsed laser to ’’write’’ a monocrystalline pattern in ion‐implanted amorphous silicon layers. Ion‐channeling data, from the samples scanned with a focused beam of a Q‐switched Nd : YAG laser, show a continuity of the single‐crystal layer produced with spatially overlapping laser pulses, at 60–80 MW cm−2. Scattering yields indicate very high substitutionality of the implanted ions and an interdependence between the laser power density and the depth redistribution of the implants. Finally, similar recrystallization was obtained with a CO2 laser at 10.6 μm.
IBM1
TL;DR: In this article, hot-electron emission from silicon into silicon dioxide is discussed and several mechanisms of importance in the emission process have been identified, such as Schottky lowering of the emission barrier, the scattering of hot electrons in the image-force potential well in the SiO2 layer, the tunneling of hot electron, and the effect of lattice temperature on electron heating.
Abstract: Recent progress in the study of hot-electron emission from silicon into silicon dioxide is discussed. Experimental techniques include avalanche injection using gated diodes and MOS capacitors, nonavalanche injection using IGFET structures with an underlying supply p - n junction, and optically induced injection using silicon-gate IGFET structures. IGFET structures allow the fields in the SiO2 layer and in the silicon depletion region to be varied independently. In addition, IGFET structures of reentrant geometry allow absolute emission probabilities of the hot electrons to be determined. Such absolute emission characteristics are useful not only for designing silicon devices but also for quantitative testing of theoretical models of the emission process. Several mechanisms of importance in the emission process have been identified. These are the Schottky lowering of the emission barrier, the scattering of hot electrons in the image-force potential well in the SiO2 layer, the tunneling of hot electrons, and the effect of lattice temperature on electron heating. There is also experimental evidence of the dependence of the hot-electron distribution on electric field gradient. At present, only phenomenological models based on the lucky-electron concept have been developed to the point where quantitative comparison with experimental results is possible. The essential features of these models are discussed.
TL;DR: In this article, the authors have developed a theory in terms of minority-carrier tunnel current transport through the interfacial layer where one semiconductor is in a nonequilibrium mode.
Abstract: Recently 12% efficient indium tin oxide (ITO) on silicon solar cells have been reported. Experiments indicate the presence of a thin interfacial insulating layer. Thus, these devices appear to belong to a class of semiconductor‐insulator‐semiconductor (SIS) solar cells where one of the semiconductors is a degenerate wide‐band‐gap oxide. We have developed a theory in terms of minority‐carrier tunnel current transport through the interfacial layer where one semiconductor is in a nonequilibrium mode. The wide‐band‐gap semiconductor serves to block band‐to‐band majority‐carrier current and thus, in principle, give better device performance than with an MIS solar cell. The effects of interfacial layer thickness, substrate doping level, surface states and interface charge, temperature on the performance of SIS solar cells have been calculated. These indicate that real‐world ITO on silicon cells should be able to achieve 20% efficiency under AMl illumination. Other combinations of semiconductors would yield even...
TL;DR: In this article, interference effects during pulsed laser irradiation annealing of ion-implanted silicon produce periodic property variations in the annealed material that mimic the interference pattern.
Abstract: We have discovered that interference effects extant during pulsed laser irradiation annealing of ion‐implanted silicon produce periodic property variations in the annealed material that mimic the interference pattern. These are manifest at near‐annealing threshold power densities as surface ripple and at higher power densities may be revealed by etching. The surface ripple observed at low power densities is correlated with the occurrence of polycrystalline silicon regions in the annealed material. Our observations suggest that surface melting and epitaxial regrowth are responsible for the annealing effect.
TL;DR: In this paper, a photoluminescent (PL) analysis at liquid-helium temperature is reported to obtain boron and phosphorus concentration in silicon crystals by using a novel method.
Abstract: A novel method to obtain boron and phosphorus concentration in silicon crystals by photoluminescent (PL) analysis at liquid‐helium temperature is reported. The intensity ratio between intrinsic and extrinsic components in the PL spectra reflects the impurity concentration. The tentative calibration curves for boron and phosphorus for our method are obtained by comparison with the results of the resistivity measurement. The detection limit of this method is estimated to be as low as 1×1011 cm−3 for boron and 5×1011 cm−3 for phosphorus. The degree of compensation can be estimated also. The PL method makes it possible to determine nondestructively the concentration of small amount of impurities in a small region of a specimen.
TL;DR: In this article, the size of the microcrystals in as-deposited films was dependent both on the deposition temperature and on the oxygen concentration, and the lattice constant was directly related to their size.
Abstract: Thermally deposited silicon films doped with oxygen atoms and used as passivation films on silicon devices have been studied with transmission electron microscopy, x‐ray diffraction, and ESCA. The films contain at least two phases, silicon microcrystals and silicon oxide. The size of the microcrystals in as‐deposited films was dependent both on the deposition temperature and on the oxygen concentration. Heat treatment caused crystal growth which depended mainly on the annealing temperature and weakly on the annealing time. The lattice constant of the microcrystals was directly related to their size. The silicon oxide phase in as‐deposited films was found to be SiO1.4. The results suggest ’’mosaic’’ model of the films which are amorphous when the diameter of the silicon microcrystals was less than 10 A.
TL;DR: In this article, the mechanical quality factor of a single crystal of silicon vs. temperature was measured at T = 3.5K and a value of 2 × 109 was obtained.
Abstract: Measurements of the mechanical quality factor Q in a single crystal of silicon vs. temperature have been made. A value of 2 × 109 has been measured at T = 3.5K.
Patent•
IBM1
TL;DR: In this article, a conformal insulator layer is formed on the substantially horizontal and substantially vertical surfaces of polycrystalline silicon, which is then removed by reactive ion etching.
Abstract: A method for forming an insulator between conductive layers, such as highly doped polycrystalline silicon, that involves first forming a conductive layer of, for example, polycrystalline silicon on a silicon body having substantially horizontal and substantially vertical surfaces. A conformal insulator layer is formed on the substantially horizontal and substantially horizontal and vertical surfaces. Reactive ion etching removes the insulator from the horizontal layer and provides a narrow dimensioned insulator on the vertical surfaces silicon body. Another conductive layer, which may be polycrystalline silicon, is formed over the insulator. The vertical layer dimension is adjusted depending upon the original thickness of the conformal insulator layer applied.
01 Jan 1978
TL;DR: In this paper, the basic mechanisms for the biointegration of Silicon are discussed. But the authors focus on the role of Silicon in regulating the regulation of metabolism by Silicate in Diatoms.
Abstract: General Chemistry of Silicon.- Aqueous Silicic Acid, Silicates and Silicate Complexes.- Hydrogen-Bonded Complexes of Silica with Organic Compounds.- The Silicon-Nitrogen Bond. A Short Survey.- Silicon in Soil, Plants and Microorganisms.- Effect of Interactions of Silicious Components and Organic Substances on Life in Soil - A Contribution to Plant Production.- Isolation and Characterization of a Silicon-Organic Complex from Plants.- Biodegradation of Silicon-Oxygen-Carbon- and Silicon-Carbon-Bonds by Bacteria - A Reflection on the Basic Mechanisms for the Biointegration of Silicon.- Regulation of Metabolism by Silicate in Diatoms.- Role of Silicon in Diatom Metabolism and Silicification.- Physiological Significance of Silicon Compounds in Animals and Man.- Significance and Functions of Silicon in Warm-Blooded Animals. Review and Outlook.- Essentiality and Function of Silicon.- Silicon Levels in Human Tissues.- Silicon, Endocrine Balance and Mineral Metabolism (Calcium and Magnesium).- The Physiological Role of Silicon and Its Anti-Atheromatous Action.- Isolation and Characterization of a Characteristic Phosphato-Silicate from Human Lungs with Silicosis.- Silicosis and Other Diseases Caused by Silicon Compounds.- Carcinogenic Potential of Silica Compounds.- Interactions of Silica and Asbestos with Macrophages.- Cellular Reactions with Silica.- Old-New Problems of Silicotic Fibrosis.- Biological and Pharmacological Effects of Organo-Silicon Compounds.- Biological Activity of Silatranes.- Biological Activity of Nitrogen-Containing Organosilicon Compounds.- Silica-Pharmaca.- The Pharmacology of Silanes and Siloxanes.- Biochemical Effects of 2, 6-cis-Diphenylhexamethyl-cyclotetrasiloxane in Man.- Structural and Analytical Aspects of Organosilicon Compounds.- Structural Aspects on Organosilicon Compounds.- Analysis of some Organosilicon Compounds in Biological Material.- Discussion and Summary.- Silicon in Biological Systems.- Final Discussion.- List of Participants.
TL;DR: In this paper, the redistribution of a dopant file after pulsed-laser annealing is dependent on the time the dopant region remains molten and on the value of the mass-diffusion coefficient for the particular dopant.
Abstract: Experimentally observed laser‐induced redistributions of ion‐implanted dopants in silicon are explained theoretically in terms of diffusion in the molten state. Calculations of thermal and mass diffusion in silicon show that the redistribution of a dopant file after pulsed‐laser annealing is dependent on the time the dopant region remains molten and on the value of the mass‐diffusion coefficient for the particular dopant.
TL;DR: Theoretical expressions for computing resistivity and conductivity mobility of holes as functions of dopant density and temperature have been derived for boron-doped silicon.
Abstract: Theoretical expressions for computing resistivity and conductivity mobility of holes as functions of dopant density and temperature have been derived for boron-doped silicon. The model is applicable for dopant densities from 1013 to 3 × 1018 cm−3 and temperatures between 100 and 400 K. Using a 3-band [i.e. heavy-hole, light-hole and the spin-orbit splitting (SO) band] model, the hole mobility was calculated by properly combining the contributions from scattering by lattice phonons, ionized impurities and neutral impurities. In addition, the effects of hole-hole (h-h) scattering and nonparabolicity of valence bands were taken into account in the mobility formulation. To verify our theoretical calculations, resistivity measurements on nine boron-doped silicon slices with dopant densities from 4.5 × 1014 to 3.2 × 1018 cm−3 were performed for 100 ≤ T ≤ 400 K, using planar square-array test structure. Agreement between our calculated and measured resistivity values was within 6 percent over the entire range of dopant density and temperature studied here. Excellent agreement (within ±5%) between our calculated hole mobility values and those of Wagner [9] was obtained for NA ≤ 1017 cm−3 for boron-doped silicon, while discrepancies were found for boron densities greater than 1017 cm−3. This discrepancy is attributed to neglecting the effect of deionization of boron impurities at higher dopant densities by Wagner (i.e. assuming hole density is equal to the total boron density).
TL;DR: The diffusivity of boron in and silicon is experimentally determined under both inert and oxidizing (dry ) ambient conditions in the range of temperatures 850°-1200°C as mentioned in this paper.
Abstract: The diffusivity of boron in and silicon is experimentally determined under both inert and oxidizing (dry ) ambient conditions in the range of temperatures 850°–1200°C The boron is implanted at moderate dose and energy (70 keV) and subsequently activated by a moderate temperature anneal The resulting profile ensures near‐intrinsic silicon at the processing temperatures and serves as initial condition for subsequent processing Diffusivities and segregation coefficients are calculated as fitting parameters in numerical solution of the experiments A systematic fitting procedure is used and the target experimental parameters are sheet resistances and junction depths Inert ambient diffusivities agree well with previous measurements, thus demonstrating the integrity of newly published mobility data used in the simulations Diffusivities in oxidizing ambient are enhanced, more so in than in silicon The enhancement increases with decreasing temperature, being about 10 for at 850°C It is demonstrated that there is good agreement between the observed diffusivity enhancement and growth of oxidation stacking faults if an interstitialcy mechanism is invoked to explain both phenomena Observed segregation coefficients are different for the two silicon orientations but they obey the same activation energy over the temperature range