Showing papers on "Silicon published in 1996"

Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

Abstract: A simple method for implementing the steady‐state photoconductance technique for determining the minority‐carrier lifetime of semiconductor materials is presented. Using a contactless instrument, the photoconductance is measured in a quasi‐steady‐state mode during a long, slow varying light pulse. This permits the use of simple electronics and light sources. Despite its simplicity, the technique is capable of determining very low minority carrier lifetimes and is applicable to a wide range of semiconductor materials. In addition, by analyzing this quasi‐steady‐state photoconductance as a function of incident light intensity, implicit current–voltage characteristic curves can be obtained for noncontacted silicon wafers and solar cell precursors in an expedient manner.

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Abstract: Using nonlocal empirical pseudopotentials, we compute the band structure and shear deformation potentials of strained Si, Ge, and SiGe alloys. Fitting the theoretical results to experimental data on the phonon‐limited carrier mobilities in bulk Si and Ge, the dilatation deformation potential Ξd is found to be 1.1 eV for the Si Δ minima, −4.4 eV for the Ge L minima, corresponding to a value for the valence band dilatation deformation potential a of approximately 2 eV for both Si and Ge. The optical deformation potential d0 is found to be 41.45 and 41.75 eV for Si and Ge, respectively. Carrier mobilities in strained Si and Ge are then evaluated. The results show a large enhancement of the hole mobility for both tensile and compressive strain along the [001] direction, but only a modest enhancement (approximately 60%) of the electron mobility for tensile biaxial strain in Si. Finally, from a fit to carrier mobilities in relaxed SiGe alloys, the effective alloy scattering potential is determined to be about 0...

Thermodynamic stability of binary oxides in contact With silicon

Abstract: Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

Silicon-based visible light-emitting devices integrated into microelectronic circuits

Abstract: MICROELECTRONIC device integration has progressed to the point where complete 'systems-on-a-chip' have been realized1–3. Now that optoelectronics is becoming increasingly important for information and communication technologies, there is a need to develop optoelectronic devices that can be integrated with standard microelectronics. Conventional semiconductor technology is largely based on crystalline silicon, which (being an indirect bandgap semiconductor) is an inefficient light-emitting material. This has stimulated significant effort towards developing silicon-based optoelectronic components and, of the several strategies explored so far4,5, the use of porous silicon appears the most promising; porous silicon produces high-efficiency, room-temperature, visible photoluminescence6, and its material and optical properties have been studied in detail7,8. But the extreme reactivity and fragility of porous silicon have hitherto prevented its integration with conventional silicon processing technology. We have recently shown9,10 that the thermal and chemical stability of porous silicon can be greatly enhanced — while retaining desirable light-emitting and charge-transport properties — by partial oxidation. Here we take advantage of these improvements in material properties to demonstrate the successful integration of silicon-based visible light-emitting devices into a standard bipolar microelectronic circuit.

Solute Segregation and Grain-Boundary Impedance in High-Purity Stabilized Zirconia

Abstract: Solute segregation at grain boundaries has been correlated with grain-boundary conductivity in high-purity 15-mol%-CaO-stabilized ZrO2. STEM measurements of solute coverage show that the segregation of impurity silicon (present at bulk levels 103 at 500°C. At the lowest levels of segregation achieved, <0.1 monolayer, σspgb remains ∼102 less, and possibly represents an “intrinsic” limiting value for the grain boundary. Comparison with Y2O3-doped ZrO2 suggests similar behavior in this system. The control of grain-boundary segregation through purity, microstructure, and thermal history is discussed from the objective of engineering the grain-boundary impedance of polycrystalline ionic conductors.

Microcontact printing on surfaces and derivative articles

Abstract: Improved methods of forming a patterned self-assembled monolayer on a surface and derivative articles are provided. According to one method, an elastomeric stamp is deformed during and/or prior to using the stamp to print a self-assembled molecular monolayer on a surface. According to another method, during monolayer printing the surface is contacted with a liquid that is immiscible with the molecular monolayer-forming species to effect controlled reactive spreading of the monolayer on the surface. Methods of printing self-assembled molecular monolayers on nonplanar surfaces and derivative articles are provided, as are methods of etching surfaces patterned with self-assembled monolayers, including methods of etching silicon. Optical elements including flexible diffraction gratings, mirrors, and lenses are provided, as are methods for forming optical devices and other articles using lithographic molding. A method for controlling the shape of a liquid on the surface of an article is provided, involving applying the liquid to a self-assembled monolayer on the surface, and controlling the electrical potential of the surface.

A physical model for planar spiral inductors on silicon

Abstract: This paper presents a physical model for planar spiral inductors on silicon. The model has been confirmed with measured and published data of inductors having different geometric and process parameters. This model is scalable with inductor geometry, allowing designers to predict and optimize the quality factor.

Sequential lateral solidification of thin silicon films on SiO2

Abstract: We report on a low‐temperature excimer‐laser‐crystallization process that produces a previously unattainable directionally solidified microstructure in thin Si films. The process involves (1) inducing complete melting of selected regions of the film via irradiation through a patterned mask, and (2) precisely controlled between‐pulse microtranslation of the sample with respect to the mask over a distance shorter than the single‐pulse lateral solidification distance, so that lateral growth can be extended over a number of iterative steps. Grains up to 200 μm in length were demonstrated; in principle, grains of unlimited length can be produced. We discuss how the technique can be extended to produce large single‐crystal regions on glass substrates.

Surface activated bonding of silicon wafers at room temperature

Abstract: A method to bond silicon wafers directly at room temperature was developed. In this method, surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum. By the infrared microscope and KOH etching method, no void at the bonded interface was detected in all the specimens tested. In the tensile test, fracture occurred not at the interface but mainly in the bulk of silicon. From these results, it is concluded that the method realizes strong and tight bonding at room temperature and is promising to assemble small parts made by the silicon wafer process.

Absorption enhancement in silicon‐on‐insulator waveguides using metal island films

Abstract: We report the degree to which the resonances associated with metal island films can be used to enhance the sensitivity of very thin semiconductor photodetectors. The island films can couple incident light into the waveguide modes of the detector, resulting in increased absorption. To characterize the coupling, silver‐, gold‐, and copper‐island layers were formed on the surface of a thin‐film photodetector fabricated in the 0.16 μm thick silicon layer of a silicon‐on‐insulator (SOI) wafer. The copper islands gave the best result, producing more than an order of magnitude enhancement in the photocurrent for light of wavelength 800 nm. The enhancements appear to be due primarily to coupling between the metal island resonances and the waveguide modes supported by the SOI structure.

Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

Abstract: The different steps that have to be taken in order to derive information about local mechanical stress in silicon using micro‐Raman spectroscopy experiments, including theoretical and experimental aspects, are discussed. It is shown that the calculations are in general less complicated when they are done in the axes system of the sample. For that purpose, the secular equation is calculated in the axes system [110], [−110], [001], which is important for microelectronics structures. The theory relating Raman mode shift with stress tensor components is applied using two analytical stress models: uniaxial stress and planar stress. The results of these models are fitted to data from micro‐Raman spectroscopy experiments on Si3N4/poly‐Si lines on silicon substrate. In this fit procedure, the dimensions of the laser spot and its penetration depth in the substrate are also taken into account.

Silicon-based sleeve devices for chemical reactions

Abstract: A silicon-based sleeve type chemical reaction chamber (41) that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (45) (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

Abstract: Outstanding surface passivation of low‐resistivity single‐crystalline p‐silicon is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasma‐enhanced chemical vapor deposition system. The effective surface recombination velocity Seff is determined as a function of the bulk injection level from light‐biased photoconductance decay measurements. On polished as well as chemically textured silicon wafers we find that our remote plasma silicon nitride provides better surface passivation than the best high‐temperature thermal oxides ever reported. For polished 1.5 and 0.7 Ω cm p‐silicon wafers, record low Seff values of 4 and 20 cm/s, respectively, are presented.

Neutron Reflectivity and Atomic Force Microscopy Studies of a Lipid Bilayer in Water Adsorbed to the Surface of a Silicon Single Crystal

Abstract: Specular reflection of neutrons has been used to characterize the structure of single lipid bilayers adsorbed to a planar silicon surface from aqueous solution We used a novel experimental setup which significantly decreased the incoherent background scattering and allowed us to measure neutron reflectivities as low as 5 × 10-7 Thicknesses and neutron scattering length densities were determined by a fitting procedure using (i) randomly generated smooth functions represented by parametric B-splines and (ii) stepped functions based on the theoretical lipid composition The size of lipid domains at the surface and the degree of surface coverage were determined by atomic force microscopy Chain-protonated and -deuterated dipalmitoylphosphatidylcholine (DPPC) bilayers were investigated in 2H2O and a mixture of 2H2O and H2O which matches the scattering density of silicon Also, one measurement on a distearoylphosphatidylcholine bilayer which has longer acyl chains was performed for comparison The lipid adsor

Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution

Abstract: Hydrogen incorporation in silicon layers prepared by plasma‐enhanced chemical‐vapor deposition using silane dilution by hydrogen has been studied by infrared spectroscopy (IR) and elastic recoil detection analysis (ERDA). The large range of silane dilution investigated can be divided into an amorphous and a microcrystalline zone. These two zones are separated by a narrow transition zone at a dilution level of 7.5%; here, the structure of the material cannot be clearly identified. The films in/near the amorphous/microcrystalline transition zone show a considerably enhanced hydrogen incorporation. Moreover, comparison of IR and ERDA and film stress measurements suggests that these layers contain a substantial amount of molecular hydrogen probably trapped in microvoids. In this particular case the determination of the total H content by IR spectroscopy leads to substantial errors. At silane concentrations below 6%, the hydrogen content decreases sharply and the material becomes progressively microcrystalline...

Macroporous silicon with a complete two‐dimensional photonic band gap centered at 5 μm

Abstract: We have fabricated a two‐dimensional photonic band structure based on macroporous silicon with a gap common to both polarizations and centered at 5 μm. A triangular lattice of circular air rods with a lattice constant of 2.3 μm was etched 75 μm deep in an n‐type silicon substrate by electrochemical pore formation in hydrofluoric acid. The porous layer was then micromechanically structured in such a way that 200 μm thick free‐standing bars of porous material were left over on the silicon substrate. These bars were then used for measuring the transmission of the photonic lattice. The results showed an excellent agreement with the theoretically calculated structure.

Silicon solar cells

Abstract: The key attributes for achieving high-efficiency crystalline silicon solar cells are identified and historical developments leading to their realization discussed. Despite the achievement of laboratory cells with performance approaching the theoretical limit, commercial cell designs need to evolve significantly to realize their potential. In particular, the development of cell structures and processes that facilitate entirely activated device volumes in conjunction with well-passivated metal contacts a nd front and rear surfaces is essential (and yet not overly challenging) to achieve commercial devices of 20% efficiency from solar-grade substrates. The inevitable trend towards thinner substrates will force manufacturers to evolve their designs in this direction or else suffer substantial performance loss. Eventually, a thin-film technology will likely dominate, with thin-film crystalline silicon cells being a serious candidate. Present commercial techniques and processes are in general unsuitable for t hin-film fabrication, with even greater importance placed on the achievement of devices with entirely activated volumes (diffusion lengths much greater than device thicknesses), well-passivated metal contacts and surfaces and the important inclusion of li ght trapping. The recent achievement of 21.5% efficiency on a thin crystalline silicon cell (less than 50 μm thick) adds credibility to the pursuit of crystalline silicon in thin films, with a key attribute of this laboratory cell being its extremely good light trapping that nullifies the long-term criticism of crystalline silicon regarding its poor absorption properties and correspondingly perceived inability to achieve high-performance thin-film devices. For low-cost, low-quality polycrystalline sil icon material, the parallel-multijunction cell structure may provide a mechanism for achieving entirely activated cell volumes with the potential to achieve reasonable efficiencies at low cost over the next decade.

Silicon drift detectors for high resolution room temperature X-ray spectroscopy

Abstract: New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface generated leakage current. The test of the 3.5 mm2 large individual devices, which have also been grouped together to form a sensitive area up to 21 mm2 have shown the following spectroscopic results: at room temperature (300 K) the devices have shown a full width at half maximum at the MnKα line of a radioactive 55 Fe source of 225 eV with shaping times of 250 to 500 ns. At −20°C the resolution improves to 152 eV at 2 μs Gaussian shaping. At temperatures below 200 K the energy resolution is below 140 eV. With the implementation of a digital filtering system the resolution approaches 130 eV. The system was operated with count rates up to 800 000 counts per second and per readout node, still conserving the spectroscopic qualities of the detector system.

Realization of atomic layer etching of silicon

Abstract: An experimental system and methodology were developed to realize dry etching of single crystal silicon with monolayer accuracy. Atomic layer etching of silicon is a cyclic process composed of four consecutive steps: reactant adsorption, excess reactant evacuation, ion irradiation, and product evacuation. When successful, completion of one cycle results in removal of one monolayer of silicon. The process was self‐limiting with respect to both reactant and ion dose. Control of the ion energy was the most important factor in realizing etching of one monolayer per cycle.

Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures

Abstract: New developments in deep reactive ion etching (DRIE) technology, when combined with silicon fusion bonding (SFB), make it possible, for the first time, to span nearly the entire range of microstructure thicknesses between surface and bulk micromachining, using only single-crystal silicon. The combination of these two powerful micromachining tools forms a versatile new technology for the fabrication of micromechanical devices. The two techniques are described and a process technology is presented. Some of the experimental structures and devices that have been demonstrated using this new process technology are discussed.

The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex

Abstract: Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.

Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding

Abstract: A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

Elastomeric compounds incorporating silicon-treated carbon blacks

Abstract: Disclosed are elastomeric compounds including an elastomer and a silicon-treated carbon black, and optionally including a coupling agent. The elastomeric compound exhibits poorer abrasion resistance in the absence of a coupling agent, lower hysteresis at high temperature and comparable or increased hysteresis at low temperature compared to an elastomer containing an untreated carbon black. A variety of elastomers and formulations employing such elastomers are contemplated and disclosed. Elastomeric compounds incorporating an elastomer and an oxidized, silicon-treated carbon black are also disclosed. Also disclosed are methods for preparing elastomers compounded with the treated carbon black.

Memory cell incorporating a chalcogenide element and method of making same

Abstract: A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer process, small pores are formed in the silicon nitride to expose a portion of the polysilicon plugs. A chalcogenide material is disposed in the pores by depositing a layer of chalcogenide material on the silicon nitride layer and planarizing the chalcogenide layer to the silicon nitride layer using CMP. A layer of TiN is next deposited over the plugs, followed by a metallization layer. The TiN and metallization layers are then masked and etched to define memory cell areas.

A low-temperature solution phase route for the synthesis of silicon nanoclusters

Abstract: We report here a new solution phase synthesis for producing crystalline silicon nanoclusters at significantly lower temperatures than previously required. In addition, it is performed at ambient pressure and yields a particle surface that can be modified by chemical methods. This method has the potential to yield large amounts of silicon nanocrystals in addition to providing reliable control over size distribution and surface termination. In this synthesis we use the Zintl salt KSi as a starting reagent. KSi is synthesized by reacting excess K with silicon at 650{degree}C for three days and subliming off the excess K at 275{degree}C under vacuum. The purity of the air-sensitive, black solid is verified by powder X-ray diffraction. 23 refs., 1 fig.

Surface recombination velocity of highly doped n-type silicon

Abstract: New experimental data for the minority‐carrier surface recombination velocity of n‐type silicon, Sp, are reported. The data, obtained from photoconductance decay measurements of the recombination currents corresponding to different phosphorus diffusions, include oxide‐passivated, unpassivated and metal‐coated surfaces. For the passivated case, Sp increases linearly with surface dopant density, ND, for dopant densities higher than 1×1018 cm−3, while for unpassivated (bare) and for metal‐coated silicon Sp remains essentially constant, at about 2×105 cm/s and 3×106 cm/s, respectively. The experiments also allow for a determination of the apparent energy bandgap narrowing as a function of dopant density, ΔEgapp=14 meV [ln(ND/1.4×1017 cm−3)]. These surface recombination velocity and ΔEgapp data form, together with the dependences of minority‐carrier lifetime, τp, and mobility, μp, used in the analysis, a consistent set of parameters that fully characterize highly doped n‐type silicon.

On the Way towards High-Efficiency Thin Film Silicon Solar Cells by the "Micromorph" Concept

Abstract: Recently the authors have demonstrated that compensated or “midgap” intrinsic hydrogenated microcrystalline silicon (μc-Si:H), as deposited by the Very High Frequency Glow Discharge (VHF-GD) technique, can be used as active layer in p-i-n solar cells. Compared to amorphous silicon (a-Si:H), μc-Si:H was found to have a significantly lower energy bandgap ofaround 1 eV. The combination of both materials (two absorbers with different gap energies) leads to a “real” tandem cell structure, which was called the “micromorph” cell. Micromorph cells can make better use of the sun's spectrum in contrast to conventional double-stacked a-Si:H / a-Si:H tandems. The present study will show that the compensation technique (involving boron “microdoping”) used sofar for obtaining midgap μc-Si:H can be replaced by the application of a gas purifier. The use of this gas purifier has a beneficial influence on the transport properties of undoped intrinsic μc-Si:H. By this procedure, increased cell efficiencies in both, single microcrystalline silicon p-i-n as well as micromorph cells could be obtained. In the first case 7.7 % stable, and in the second case 13.1% initial efficiency could be achieved under AMI.5 conditions. Preliminary light-soaking experiments performed on the tandem cells indicate that microcrystalline silicon could contribute to an enhancement of the stable efficiency performance. Micromorph cell manufacturing is fully compatible to a-Si:H technology; however, its deposition rate is still too low. With further increase of the rate, a similar cost reduction potential like in a-Si:H technology can be extrapolated.

Fluorescence interference-contrast microscopy on oxidized silicon using a monomolecular dye layer

Abstract: A silicon chip is covered by a monomolecular film of a fluorescence dye with silicon dioxide used as a spacer. The fluorescence depends on the distance of the dye from the silicon. The modulation of the intensity is described quantitatively by an optical theory which accounts for interference of the exciting light and of the emitted light. The effect is used to obtain a microscopic picture of the surface profile with a precision of a few Angstroms. The perspectives for an application in wet systems such as neuron-silicon junctions and lipid membranes on silicon are pointed out.