Topic
Silicon
About: Silicon is a research topic. Over the lifetime, 196073 publications have been published within this topic receiving 3038411 citations. The topic is also known as: element 14 & Si.
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TL;DR: In this article, a new sensing device based on a FET structure having a PoSi layer as sensing material, namely adsorption porous silicon-based FET (APSFET), is proposed.
Abstract: In this paper, a new sensing device based on a FET structure having a PoSi layer as sensing material, namely adsorption porous silicon-based FET (APSFET), is proposed. The sensing mechanism is based on an gas-induced conduction channel in the crystalline silicon under the sensing layer, a new approach with respect to previously reported PoSi sensors. The fabrication process is based on a standard silicon process. In this work, the fabrication process along with an electrical characterization of the device in presence of different organic vapors (alcohols and acids) is presented and discussed.
62 citations
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TL;DR: In this paper, the epitaxial imperfection is caused by preferentially oriented tetragonal ZrO2(002) grains on Si(100), Si(111), and SiO2/Si substrates.
Abstract: Zirconium dioxide (ZrO2) films have been grown on Si(100), Si(111), and SiO2/Si substrates heated at the range from room temperature to 800 °C by vacuum evaporation. X‐ray diffraction and reflection high‐energy electron diffraction observations reveal the epitaxial growth of tetragonal ZrO2(200) films on Si(100) substrates at 800 °C. The epitaxial imperfection is caused by preferentially oriented tetragonal ZrO2(002) grains. The crystalline system of ZrO2 films depends on the substrate temperature. The crystalline perfection and the orientation of tetragonal ZrO2 films grown at 800 °C depend on the substrate orientation.
62 citations
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14 Dec 2005
TL;DR: In this article, a method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process.
Abstract: A method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant. The silicon oxide deposition sub-cycle may include contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit desirable etch rates relative to thermal oxide. Depending on the films' composition, the etch rates may be higher or lower than the etch rates of thermal oxide.
62 citations
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TL;DR: Hexagonal AlN layers were grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, and the transition between the (7×7) and (1×1) silicon surface reconstructions was used for in situ calibration of the substrate temperature.
Abstract: Hexagonal AlN layers were grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. The transition between the (7×7) and (1×1) silicon surface reconstructions, at 1100 K, was used for in situ calibration of the substrate temperature. The initial deposition of Al, at 1130–1190 K, produced an effective nucleation layer for the growth of AlN. The Al layer also reduced islands of SiNx that might be formed due to background NH3 on the silicon surface prior to the onset of epitaxial growth. The transition to two-dimensional growth mode, under optimum conditions, was obtained after the initial AlN thickness of ∼7 nm.
62 citations
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TL;DR: In this article, the authors focus on the thermo-chemistries being employed in the last two categories, with emphasis on removal of boron and phosphorous, as these elements are the two most difficult to remove from silicon by unidirectional solidification.
Abstract: While there are numerous contestants in the race to produce low-cost solar silicon, the chemistries involved can be grouped into three categories: new Siemens-like processes, new approaches to reduction of silica, and upgrades of metallurgical-grade silicon. This review is focused on the thermo-chemistries being employed in the last two categories, with emphasis on removal of boron and phosphorous, as these elements are the two most difficult to remove from silicon by unidirectional solidification.
62 citations