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Silicon

About: Silicon is a research topic. Over the lifetime, 196073 publications have been published within this topic receiving 3038411 citations. The topic is also known as: element 14 & Si.


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Journal ArticleDOI
TL;DR: In this paper, a silicon heterojunction with interdigitated back contacts was presented, achieving an efficiency of 26.3% and a detailed loss analysis to guide further developments.
Abstract: The efficiency of silicon solar cells has a large influence on the cost of most photovoltaics panels. Here, researchers from Kaneka present a silicon heterojunction with interdigitated back contacts reaching an efficiency of 26.3% and provide a detailed loss analysis to guide further developments.

2,052 citations

Journal ArticleDOI
07 Nov 2002-Nature
TL;DR: The synthesis of core–multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.
Abstract: Semiconductor heterostructures with modulated composition and/or doping enable passivation of interfaces and the generation of devices with diverse functions. In this regard, the control of interfaces in nanoscale building blocks with high surface area will be increasingly important in the assembly of electronic and photonic devices. Core-shell heterostructures formed by the growth of crystalline overlayers on nanocrystals offer enhanced emission efficiency, important for various applications. Axial heterostructures have also been formed by a one-dimensional modulation of nanowire composition and doping. However, modulation of the radial composition and doping in nanowire structures has received much less attention than planar and nanocrystal systems. Here we synthesize silicon and germanium core-shell and multishell nanowire heterostructures using a chemical vapour deposition method applicable to a variety of nanoscale materials. Our investigations of the growth of boron-doped silicon shells on intrinsic silicon and silicon-silicon oxide core-shell nanowires indicate that homoepitaxy can be achieved at relatively low temperatures on clean silicon. We also demonstrate the possibility of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets drive hole injection into either germanium core or shell regions. Our synthesis of core-multishell structures, including a high-performance coaxially gated field-effect transistor, indicates the general potential of radial heterostructure growth for the development of nanowire-based devices.

2,022 citations

Journal Article
TL;DR: First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures, which show remarkable electronic and magnetic properties, which are size and orientation dependent.
Abstract: Department of Physics, Bilkent University, Ankara 06800, Turkey(Received 27 November 2008; published 12 June 2009)First-principles calculations of structure optimization, phonon modes, and finite temperature moleculardynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycombstructures. Similar to graphene, these puckered structures are ambipolar and their charge carriers canbehave like a massless Dirac fermion due to their and bands which are crossed linearly at the Fermilevel. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Geshow remarkable electronic and magnetic properties, which are size and orientation dependent. Theseproperties offer interesting alternatives for the engineering of diverse nanodevices.

2,002 citations

Journal ArticleDOI
TL;DR: An overview of the current state-of-the-art in silicon nanophotonic ring resonators is presented in this paper, where the basic theory of ring resonance is discussed and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes.
Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

1,989 citations

Journal ArticleDOI
TL;DR: The photoluminescence (PL) spectra of undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied in this paper, where two emission peaks, centered at 3.18 eV and 2.38 eV, were found to correspond to oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.
Abstract: The photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the I–V properties of the ZnO/Si heterojunctions were investigated at different annealing temperatures and atmospheres. The defect levels in ZnO films were also calculated using the method of full-potential linear muffin-tin orbital. It is concluded that the green emission corresponds to the local level composed by oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.

1,923 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20241
20233,196
20226,870
20213,087
20204,653
20195,697