Showing papers on "Silicon nitride published in 2020"

Subvolt electro-optical modulator on thin-film lithium niobate and silicon nitride hybrid platform.

Abstract: A low voltage operation electro-optic modulator is critical for applications ranging from optical communications to an analog photonic link. This paper reports a hybrid silicon nitride and lithium niobate electro-optic Mach–Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light. The presented amplitude modulator with an interaction region length of 2.4 cm demonstrates a DC half-wave voltage of only 0.875 V, which corresponds to a modulation efficiency per unit length of 2.11 V cm. The power extinction ratio of the fabricated device is approximately 30 dB, and the on-chip optical loss is about 5.4 dB.

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Abstract: The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate.

Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities.

Abstract: Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si3N4 hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

Abstract: This letter reports on the improvement of the large-signal W-band power performance of nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition of a 40-nm-thick ex-situ silicon nitride passivation layer deposited by plasma enhanced chemical vapor deposition. The additional passivation improves the dispersion control allowing the device to be operated at higher voltages. Continuous-wave load pull measurements performed at 94 GHz on a $2\times 37.5\,\,\mu \text{m}$ transistor demonstrated an improvement in the peak power-added efficiency (PAE) to 30.2% with an associated output power density of 7.2 W/mm at 20 V drain bias. Furthermore, at 23 V, a new record-high W-band power density of 8.84 W/mm (663 mW) was achieved with an associated PAE of 27.0%.

Experimental investigation of silicon and silicon nitride platforms for phase-change photonic in-memory computing

Abstract: Advances in artificial intelligence have greatly increased demand for data-intensive computing. Integrated photonics is a promising approach to meet this demand in big-data processing due to its potential for wide bandwidth, high speed, low latency, and low-energy computing. Photonic computing using phase-change materials combines the benefits of integrated photonics and co-located data storage, which of late has evolved rapidly as an emerging area of interest. In spite of rapid advances of demonstrations in this field on both silicon and silicon nitride platforms, a clear pathway towards choosing between the two has been lacking. In this paper, we systematically evaluate and compare computation performance of phase-change photonics on a silicon platform and a silicon nitride platform. Our experimental results show that while silicon platforms are superior to silicon nitride in terms of potential for integration, modulation speed, and device footprint, they require trade-offs in terms of energy efficiency. We then successfully demonstrate single-pulse modulation using phase-change optical memory on silicon photonic waveguides and demonstrate efficient programming, memory retention, and readout of $ \gt {4}$>4 bits of data per cell. Our approach paves the way for in-memory computing on the silicon photonic platform.

Normal-Incidence-Excited Strong Coupling between Excitons and Symmetry-Protected Quasi-Bound States in the Continuum in Silicon Nitride-WS2 Heterostructures at Room Temperature.

Abstract: Room-temperature strong coupling between quasi-bound states in the continuum (q-BIC) of a silicon nitride metasurface and excitons in a WS2 monolayer is investigated in detail by both numerical sim...

High-efficiency lithium niobate modulator for K band operation

Abstract: This paper reports a hybrid silicon nitride–lithium niobate electro-optic Mach–Zehnder-interferometer modulator that demonstrates overall improvements in terms of half-wave voltage, optical insertion loss, extinction ratio, and operational bandwidth. The fabricated device exhibits a DC half-wave voltage of ∼1.3 V, a static extinction ratio of ∼27 dB, an on-chip optical loss of ∼1.53 dB, and a 3 dB electro-optic bandwidth of 29 GHz. In addition, this device operates beyond the 3 dB bandwidth, where a half-wave voltage of 3 V is extracted at 40 GHz when the device is biased at quadrature. The modulator is realized by strip-loading thin-film lithium niobate with low-pressure chemical vapor deposited silicon nitride; this enables reduced on-chip losses and allows for a lengthened 2.4 cm long interaction region that is specifically engineered for broadband performance.

Gas phase synthesis of amorphous silicon nitride nanoparticles for high-energy LIBs

Abstract: Various morphological nanoscale designs have come into the spotlight to address the failure in the mechanism of high-capacity Si anodes, i.e. severe volume expansion (∼300%). However, the nanostructured Si anodes designed still suffer mechanical degradation upon repeated cycling, and eventually become shredded and surrounded by accumulated solid electrolyte interphase (SEI) layers. Here, we introduce a highly homogenous phase design of Si with N by scalable gas phase synthesis, which tackles the intrinsic challenges of Si anodes, i.e. mechanical degradation and slow Li diffusion. Si-rich silicon nitride (SiN) nanoparticles are realized using a specially customized vertical furnace, where Si3N4 acts as not only a strong inactive matrix but also a Li ion conductor after lithiation. Owing to their stubborn and ionic conductive matrix, SiN nanoparticles exhibit superior rate performances and cycling stability while maintaining their dense structure. Accordingly, when combined with commercially viable graphite-blended system for the pouch-type 1 A h cell, SiN nanoparticles demonstrate high rate capability at 5C, as well as contributing much higher capacity than silicon nanoparticles by mitigating electrode swelling during cycling.

Erbium-doped TeO 2 -coated Si 3 N 4 waveguide amplifiers with 5 dB net gain

Abstract: We demonstrate 5 dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide. The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultra-low losses and mature, reliable, and low-cost fabrication methods of silicon nitride waveguide technology. We show that the waveguide platform demonstrates low background propagation losses of 0.25 dB/cm based on a ring resonator device with a Q factor of 1.3×106 at 1640 nm. We measure 5 dB peak net gain at 1558 nm and >3 dB of net gain across the C band in a 6.7 cm long waveguide for 35 mW of launched 1470 nm pump power. Gain per unit length of 1.7 and 1.4 dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths, respectively. Amplifier simulations predict that >10 dB gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling. These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.

Giant Tunable Mechanical Nonlinearity in Graphene-Silicon Nitride Hybrid Resonator.

Abstract: High quality factor mechanical resonators have shown great promise in the development of classical and quantum technologies. Simultaneously, progress has been made in developing controlled mechanical nonlinearity. Here, we combine these two directions of progress in a single platform consisting of coupled silicon nitride (SiNx) and graphene mechanical resonators. We show that nonlinear response can be induced on a large area SiNx resonator mode and can be efficiently controlled by coupling it to a gate-tunable, freely suspended graphene mode. The induced nonlinear response of the hybrid modes, as measured on the SiNx resonator surface is giant, with one of the highest measured Duffing constants. We observe a novel phononic frequency comb which we use as an alternate validation of the measured values, along with numerical simulations which are in overall agreement with the measurements.

Dense, Strong, and Precise Silicon Nitride-Based Ceramic Parts by Lithography-Based Ceramic Manufacturing

Abstract: Due to the high level of light absorption and light scattering of dark colored powders connected with the high refractive indices of ceramic particles, the majority of ceramics studied via stereolithography (SLA) have been light in color, including ceramics such as alumina, zirconia and tricalcium phosphate. This article focuses on a lithography-based ceramic manufacturing (LCM) method for β-SiAlON ceramics that are derived from silicon nitride and have excellent material properties for high temperature applications. This study demonstrates the general feasibility of manufacturing of silicon nitride-based ceramic parts by LCM for the first time and combines the advantages of SLA, such as the achievable complexity and low surface roughness (Ra = 0.50 µm), with the typical properties of conventionally manufactured silicon nitride-based ceramics, such as high relative density (99.8%), biaxial strength (σf = 764 MPa), and hardness (HV10 = 1500).

Surface tension of ethylene glycol-based nanofluids containing various types of nitrides

Abstract: This paper focuses on an experimental study of the surface tension of nanofluids based on ethylene glycol with various types of nitride nanoparticles. Samples were prepared using a two-step method with mass content between 1 and 5% of particles. Nanofluids contain three types of nitride nanoparticles: aluminum nitride, silicon nitride and titanium nitride with various particle average sizes. Surface tension of nanofluids was investigated at a constant temperature of 298.15 K with two different techniques: du Nouy ring method and pendant drop method. It is presented that experimental values obtained with both methods are in good agreement with each other. Also, results obtained during this study show that the addition of this type of nanoparticles does not have a significant impact on the surface tension of base fluid for the concentrations and diameters of nitride nanoparticles considered.

Heterogeneous photodiodes on silicon nitride waveguides.

Abstract: Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.

Heterogeneous silicon nitride photonics

Abstract: We solve one of the key photonic challenges–bringing wafer-scale electrically pumped optical sources to a silicon nitride photonic platform with the world’s first demonstration of electrically pumped heterogeneous GaAs-on-SiN lasers operating at a wavelength below the Si bandgap.

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Abstract: We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

Thermo-optic properties of silicon-rich silicon nitride for on-chip applications.

Abstract: We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10-4 K-1. Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.

Stress-released Si3N4 fabrication process for dispersion-engineered integrated silicon photonics.

Abstract: We develop a stress-released stoichiometric silicon nitride (Si3N4) fabrication process for dispersion-engineered integrated silicon photonics. To relax the high tensile stress of a thick Si3N4 film grown by low-pressure chemical vapor deposition (LPCVD) process, we grow the film in two steps and introduce a conventional dense stress-release pattern onto a ∼400nm-thick Si3N4 film in between the two steps. Our pattern helps minimize crack formation by releasing the stress of the film along high-symmetry periodic modulation directions and helps stop cracks from propagating. We demonstrate a nearly crack-free ∼830nm-thick Si3N4 film on a 4” silicon wafer. Our Si3N4 photonic platform enables dispersion-engineered, waveguide-coupled microring and microdisk resonators, with cavity sizes of up to a millimeter. Specifically, our 115µm-radius microring exhibits an intrinsic quality (Q)-factor of ∼2.0×106 for the TM00 mode and our 575µm-radius microdisk demonstrates an intrinsic Q of ∼4.0×106 for TM modes in 1550nm wavelengths.

Controlling Light- and Elevated-Temperature-Induced Degradation With Thin Film Barrier Layers

Abstract: In this article, we investigate the extent of lifetime degradation attributed to light- and elevated-temperature-induced degradation (LeTID) in p- type multicrystalline silicon wafers passivated with different configurations of hydrogenated silicon nitride (SiNx:H) and aluminum oxide (AlOx:H). We also demonstrate a significant difference between AlOx:H layers grown by atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) with respect to the extent of LeTID. When ALD AlOx:H is placed underneath a PECVD SiNx:H layer, as used in a passivated emitter and rear solar cell, a lower extent of LeTID is observed compared with the case when a single PECVD SiNx:H layer is used. On the other hand, the LeTID extent is significantly increased when an ALD AlOx:H is grown on top of the PECVD SiNx:H film. Remarkably, when a PECVD AlOx:H is used underneath the PECVD SiNx:H film, an increase in the LeTID extent is observed. Building on our current understanding of LeTID, we explain these results with the role of ALD AlOx:H in impeding the hydrogen diffusion from the dielectric stack into the c-Si bulk, while PECVD AlOx:H seems to act as an additional hydrogen source. These observations support the hypothesis that hydrogen is playing a key role in LeTID and provide solar cell manufacturers with a new method to reduce LeTID in their solar cells.

Bound-States-in-Continuum Hybrid Integration of 2D Platinum Diselenide on Silicon Nitride for High-Speed Photodetectors

Abstract: Hybrid integration of two-dimensional (2D) materials holds great promise for realizing novel optoelectronic components on planar dielectric waveguides. Functional devices based on 2D layered transi...

Cost effective preparation of Si3N4 ceramics with improved thermal conductivity and mechanical properties

Abstract: High-purity silicon powder is used as the starting material for cost-effective preparation of silicon nitride ceramics with both high thermal conductivity and excellent mechanical properties using RE2O3 (RE=Y, La or Er) and MgO as sintering additives. Nitridation is a key procedure that would affect the properties of green bodies and the sintered samples. The β: (α+β) ratio can be increased as the samples nitrided at 1450oC and a large amount of long rod-like β-Si3N4 grains were developed in the samples. It was found that the addition of Er2O3-MgO could help to improve the mechanical properties of the sintered Si3N4 ceramics, the thermal conductivity, flexural strength and fracture toughness of the sample were 90 W/(m∙K), 953±28.3 MPa and 10.64±0.61 MPa·m1/2, respectively. The RE3+ species with larger ionic radius tended to increase the oxygen of nitrided samples and decrease N/O ratio (triangle grain boundary) of sintered samples.

O-band N-rich silicon nitride MZI based on GST

Abstract: We have experimentally demonstrated an O-band Mach–Zehnder interferometer (MZI) based on an N-rich silicon nitride platform combined with Ge 2 Sb 2 Te 5 for future optical communication applications. The device operation relies on controlling the waveguide's losses using a phase change material cell, which can be changed from amorphous (low-loss) to crystalline (high-loss). An extinction ratio as high as 11 dB was obtained between the amorphous (ON) and the crystalline (OFF) states of the MZI optical building block. The insertion loss of the MZI structure per cell unit length was measured to be as high as 0.87 dB/μm in the OFF state and as low as 0.064 dB/μm in the ON state for TM polarization.