Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Method of patterning a silicon nitride dielectric film

Abstract: Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.

Kinetics of Oxidation of Hot‐Pressed Silicon Nitride Containing Magnesia

Abstract: The oxidation of NC 132 hot-pressed silicon nitride in dry oxygen was studied at 1521 to 1731K. The rate of O2 uptake and N2 release, as a function of time, was measured volumetrically. The ratio of N2 released to O2 consumed was smaller than expected from the stoichiometry of the oxidation reaction for Si3N4. The low value was attributed to impurities in the material. The oxidation rate followed the parabolic law with an activation energy of 440 kJ/mol. The corrosion scales (examined by microsurface techniques) were porous due to bubbles of released N2. The scales consisted of a mixture of unoxidized silicon nitride grains, crystalline oxides (SiO2 and MgSiO3containing other elements), and a glass phase. Reoxidation showed that the oxide scale was not protective. The magnesium profile in the subsurface layers indicated that the diffusion of magnesium in the unoxidized material was the rate-limiting step in the oxidation.

Controlled pulse-etching with xenon difluoride

Abstract: A gas-phase, room-temperature, plasmaless isotropic etching system has been used for bulk and thin film silicon etching. A computer controlled multi-chambered etcher is used to provide precisely metered pulses of xenon difluoride (XeF/sub 2/) gas to the etch chamber. Etch rates as high as 15 microns per minute have been observed. The etch appears to have infinite selectivity to many common thin films, including silicon dioxide, silicon nitride, photoresist, and aluminum. The etch rate, profile, and roughness are reported as a function of mask aperture, etch pressure, and duration.

Methods for etching an etching stop layer utilizing a cyclical etching process

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Temperature distribution for electrically conductive and non-conductive materials during Field Assisted Sintering (FAST)

Abstract: During Field Assisted Sintering Technology (FAST) the temperature differences at two different positions were investigated using two pyrometers, an internal and an external one. Two substances, an electrically conductive (tungsten carbide) and a non-conductive material (96 wt.% silicon nitride with 2 wt.% alumina and yttria) were used to monitor the temperature differences between both pyrometers during heating, sintering shrinkage and dwell time by varying die geometry and heating rate. It was shown that the temperature distribution is strongly influenced by the electrical conductivity of the material as well as by tool design and setup. The alpha–beta transformation of silicon nitride was analyzed to predict the radial temperature distribution within the sample. For comparison and for visualization a dynamical FE model including piston movement for simulating sintering shrinkage was introduced. With this, a complete time dependent FAST run could be simulated. The modeled differences in temperature distribution are in good agreement with real temperature measurements as well as phase analyses.