Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

Abstract: We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Deposition of silicon nitride

Abstract: Embodiments of the present invention relate to methods and apparatus for depositing a silicon nitride film. More particularly, embodiments of the present invention relate to methods and apparatus for depositing a silicon nitride film by cyclical layer deposition. One method for depositing a silicon nitride film generally comprises separately introducing one or more pulses of a nitrogen precursor and one or more pulses of a silicon precursor to a region adjacent to the substrate surface. A portion of the pulses of the nitrogen precursor and a portion of the pulses of the silicon precursor are present together at the region adjacent the substrate surface. Another embodiment for depositing a silicon nitride film comprises dosing a continuous flow of a purge gas with at least one pulse of a silicon precursor and at least one pulse of a nitrogen precursor. Each pulse of the silicon precursor and the nitrogen precursor is provided for a time period between about 0.01 seconds and about 2.0 seconds. A time period between the pulses of nitrogen precursor and the pulses of silicon precursor is between about 0.01 seconds and about 2.0 seconds. Still another embodiment for depositing a silicon nitride film comprises providing pulses of the silicon precursor and the nitrogen precursor to a substrate at a substrate temperature of about 600° C.

Systems and methods of forming refractory metal nitride layers using organic amines

Abstract: A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plurality of deposition cycles) with a refractory metal precursor compound, an organic amine, and an optional silicon precursor compound.

Surface Characterization of Silicon Nitride and Silicon Carbide Powders

Abstract: The nature and composition of the surfaces of silicon nitride and silicon carbide powders were investigated using high voltage and high resolution transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). An amorphous oxide (or oxygen-rich) layer, approx. =3-5 nm thick, present on the powder surfaces forms strong bridges between particles. Both XPS and SIMS show that oxygen is the major impurity on the powder surfaces, but minor impurities such as chlorine, fluorine, carbon, iron and sodium are also revealed. The extent of the oxide layer was reduced substantially by washing the powder in anhydrous hydrofluoric acid or by treatment in an argon/hydrogen gas mixture at approx. =1300/sup 0/C. Surface treatment in the gas mixture did not cause further agglomeration of the powder.