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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


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Journal ArticleDOI
TL;DR: In this article, the authors show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility, and they use a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point.
Abstract: We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band-gap or band-overlap in the different layers.

115 citations

Journal ArticleDOI
TL;DR: The roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability are demonstrated.
Abstract: Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX3) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiNx/SiNxOy/SiOy passivated and encapsulated CsPbBr3/PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiNx, SiNxOy, and SiOy liganded to the surfaces of the CsPbBr3 QDs to optimize the PLQY and the stability of CsPbB...

115 citations

Journal ArticleDOI
TL;DR: The influence of iron impurity on both the oxidation and nitridation of high purity silicon has been investigated in this paper, where it is shown that iron is effective in rapidly removing the protective silica film which normally covers silicon.
Abstract: The influence of iron impurity on both the oxidation and nitridation of high purity silicon has been investigated. It is shown that iron is effective in rapidly removing the protective silica film which normally covers silicon. Experimental evidence suggests that the removal is achieved by iron-induced devitrification and disruption of the silica, thus allowing the SiO (g) generated by the Si/SiO2 interface reaction to escape. During the nitridation of iron-contaminated silicon powder compacts it is found that iron significantly enhances the extent of reaction for contamination levels of <1000 p.p.m. Fe (by weight). Above this level there is a decrease in the rate of formation of extra nitride. At all levels of contamination the percentage of silicon converted to β-Si3N4 was observed to be directly proportional to the iron concentration, and it is shown that this β-growth occurs within an FeSix liquid phase. The possible implications of the findings for the optimization of strength of reaction-bonded silicon nitride are briefly discussed.

115 citations

Journal ArticleDOI
TL;DR: In this paper, it was shown that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions.
Abstract: During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress ({dot {var_epsilon}} {proportional_to} {sigma}{sup n}, 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate tomore » flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride.« less

114 citations

Journal ArticleDOI
TL;DR: In this paper, the authors discuss the deposition of silicon nitride (Si3N4) and silicon diimide [Si(NH)2] thin films by remote plasma enhanced chemical vapor deposition.
Abstract: We discuss the deposition of silicon nitride (Si3N4) and silicon diimide [Si(NH)2] thin films by remote plasma enhanced chemical vapor deposition (RPECVD). We show that the use of two different nitrogen source gases N2 and NH3 leads to qualitatively different local bonding in the deposited films. We present studies of the local chemical bonding as a function of the substrate temperature (Ts) and the dilution of the nitrogen containing species with the rare gases Ar and He. We show that diluting the N2 with He by a factor of about 10 to 1 increases the growth rate for thin film formation by a factor of more than 3. Dilution of NH3 with He, reduces the deposition rate and also the amount of bonded hydrogen.

114 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911