Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Handbook of Infrared Spectroscopy of Ultrathin Films

Abstract: PrefaceAcronyms and SymbolsIntroduction1 Absorption and Reflection of Infrared Radiation byUltrathin Films11 Macroscopic Theory of Propagation of ElectromagneticWaves in Infinite Medium12 Modeling Optical Properties of a Material13 Classical Dispersion Models of Absorption14 Propagation of IR Radiation through Planar Interface between Two Isotropic Media141 Transparent Media142 General Case15 Reflection of Radiation at Planar Interface Covered by Single Layer16 Transmission of Layer Located at Interface between Two Isotropic Semi-infinite Media17 System of Plane-Parallel Layers: Matrix Method18 Energy Absorption in Layered Media181 External Reflection: Transparent Substrates182 External Reflection: Metallic Substrates183 ATR19 Effective Medium Theory110 Diffuse Reflection and TransmissionAppendixReferences2 Optimum Conditions for Recording Infrared Spectra of Ultrathin Films21 IR Transmission Spectra Obtained in Polarized Radiation22 IRRAS Spectra of Layers on Metallic Surfaces ("Metallic" IRRAS)23 IRRAS of Layers on Semiconductors and Dielectrics231 Transparent and Weakly Absorbing Substrates ("Transparent" IRRAS)232 Absorbing Substrates233 Buried Metal Layer Substrates (BML-IRRAS)24 ATR Spectra25 IR Spectra of Layers Located at Interface251 Transmission252 Metallic IRRAS253 Transparent IRRAS254 ATR26 Choosing Appropriate IR Spectroscopic Method for Layer on Flat Surface27 Coatings on Powders, Fibers, and Matte Surfaces271 Transmission272 Diffuse Transmittance and Diffuse Reflectance273 ATR274 Comparison of IR Spectroscopic Methods for Studying Ultrathin Films on PowdersReferences3 Interpretation of IR Spectra of Ultrathin Films31 Dependence of Transmission, ATR, and IRRAS Spectra of Ultrathin Films on Polarization (Berreman Effect)32 Theory of Berreman Effect321 Surface Modes322 Modes in Ultrathin Films323 Identification of Berreman Effect in IR Spectra of Ultrathin Films33 Optical Effect: Film Thickness, Angle of Incidence, and Immersion331 Effect in "Metallic" IRRAS332 Effect in "Transparent" IRRAS333 Effect in ATR Spectra334 Effect in Transmission Spectra34 Optical Effect: Band Shapes in IRRAS as Function of Optical Properties of Substrate35 Optical Property Gradients at Substrate-Layer Interface: Effect on Band Intensities in IRRAS36 Dipole-Dipole Coupling37 Specific Features in Potential-Difference IR Spectra of Electrode-Electrolyte Interfaces371 Absorption Due to Bulk Electrolyte372 (Re)organization of Electrolyte in DL373 Donation/Backdonation of Electrons374 Stark Effect375 Bipolar Bands376 Effect of Coadsorption377 Electronic Absorption378 Optical Effect38 Interpretation of Dynamic IR Spectra: Two-Dimensional Correlation Analysis39 IR Spectra of Inhomogeneous Films and Films on Powders and Rough Surfaces Surface Enhancement391 Manifestation of Particle Shape in IR Spectra392 Coated Particles393 Composite, Porous, and Discontinuous Films394 Interpretation of IR Surface-Enhanced Spectra395 Rough Surfaces310 Determination of Optical Constants of Isotropic Ultrathin Films: Experimental Errors in ReflectivityMeasurements311 Determination of Molecular Packing and Orientation in Ultrathin Films: Anisotropic Optical Constants of Ultrathin Films3111 Order-Disorder Transition3112 Packing and Symmetry of Ultrathin Films3113 Orientation3114 Surface Selection Rule for Dielectrics3115 Optimum Conditions for MO StudiesReferences4 Equipment and Techniques 30741 Techniques for Recording IR Spectra of Ultrathin Films on Bulk Samples411 Transmission and Multiple Transmission412 IRRAS413 ATR414 DRIFTS42 Techniques for Ultrathin Films on Powders and Fibers421 Transmission422 Diffuse Transmission423 Diffuse Reflectance424 ATR43 High-Resolution FTIR Microspectroscopy of Thin Films431 Transmission432 IRRAS433 DRIFTS and DTIFTS434 ATR435 Spatial Resolution and Smallest Sampling Area436 Comparison of -FTIR Methods44 Mapping, Imaging, and Photon Scanning Tunneling Microscopy45 Temperature-and-Environment Programmed Chambers for In Situ Studies of Ultrathin Films on Bulk and Powdered Supports46 Technical Aspects of In Situ IR Spectroscopy of Ultrathin Films at Solid-Liquid and Solid-Solid Interfaces461 Transmission462 In Situ IRRAS463 ATR464 Measurement Protocols for SEC Experiments47 Polarization Modulation Spectroscopy48 IRRAS of Air-Water Interface49 Dynamic IR Spectroscopy491 Time Domain492 Frequency Domain: Potential-Modulation Spectroscopy410 Preparation of Substrates4101 Cleaning of IREs4102 Metal Electrode and SEIRA Surfaces4103 BML SubstrateReferences5 Infrared Spectroscopy of Thin Layers in Silicon Microelectronics51 Thermal SiO2 Layers52 Low-Temperature SiO2 Layers53 Ultrathin SiO2 Layers54 Silicon Nitride, Oxynitride, and Carbon Nitride Layers55 Amorphous Hydrogenated Films551 a-Si:H Films552 a-SiGe:H553 a-SiC:H Films56 Films of Amorphous Carbon, Boron Nitride, and Boron Carbide561 Diamondlike Carbon562 Boron Nitride and Carbide Films57 Porous Silicon Layers58 Other Dielectric Layers Used in Microelectronics581 CaF2, BaF2, and SrF2 Layers582 GeO2 Film583 Metal Silicides584 Amorphous Ta2O5 Films585 SrTiO3 Film586 Metal Nitrides59 Multi- and Inhomogeneous Dielectric Layers: Layer-by-Layer EtchingReferences6 Application of Infrared Spectroscopy to Analysis of Interfaces and Thin Dielectric Layers in Semiconductor Technology61 Ultrathin Oxide Layers in Silicon Schottky-Type Solar Cells62 Control of Thin Oxide Layers in Silicon MOS Devices621 CVD Oxide Layers in Al-SiOx -Si Devices622 Monitoring of Aluminum Corrosion Processes in Al-PSG Interface623 Determination of Metal Film and Oxide Layer Thicknesses in MOS Devices63 Modification of Oxides in Metal-Same-Metal Oxide-InP Devices64 Dielectric Layers in Sandwiched Semiconductor Structures641 Silicon-on-Insulator642 Polycrystalline Silicon-c-Si Interface643 SiO2 Films in Bonded Si Wafers644 Quantum Wells65 IR Spectroscopy of Surface States at SiO2 -Si Interface66 In Situ Infrared Characterization of Si and SiO2 Surfaces661 Monitoring of CVD of SiO2662 Cleaning and Etching of Si Surfaces663 Initial Stages of Oxidation of H-Terminated Si SurfaceReferences7 Ultrathin Films at Gas-Solid, Gas-Liquid, and Solid-Liquid Interfaces71 IR Spectroscopic Study of Adsorption from Gaseous Phase: Catalysis711 Adsorption on Powders712 Adsorption on Bulk Metals72 Native Oxides: Atmospheric Corrosion and Corrosion Inhibition73 Adsorption on Flat Surfaces of Dielectrics and Semiconductors74 Adsorption on Minerals: Comparison of Data Obtained In Situ and Ex Situ741 Characterization of Mineral Surface after Grinding: Adsorption of Inorganic Species742 Adsorption of Oleate on Calcium Minerals743 Structure of Adsorbed Films of Long-Chain Amines on Silicates744 Interaction of Xanthate with Sulfides75 Electrochemical Reactions at Semiconducting Electrodes: Comparison of Different In Situ Techniques751 Anodic Oxidation of Semiconductors752 Anodic Reactions at Sulfide Electrodes in Presence of Xanthate76 Static and Dynamic Studies of Metal Electrode-Electrolyte Interface: Structure of Double Layer77 Thin Polymer Films, Polymer Surfaces, and Polymer-Substrate Interface78 Interfacial Behavior of Biomolecules and Bacteria781 Adsorption of Proteins and Model Molecules at Different Interfaces782 Membranes783 Adsorption of BiofilmsReferencesAppendixReferencesIndex

Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications

Abstract: A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displacement technique is used to form a thin activation seed layer of copper on the barrier layer. An electroless deposition technique is then used to auto-catalytically deposit copper on the activated barrier layer. The electroless copper deposition continues until the via/trench is filled. Subsequently, the surface is polished by an application of chemical-mechanical polishing (CMP) to remove excess copper and barrier material from the surface, so that the only copper and barrier material remaining are in the via/trench openings. Then an overlying silicon nitride (SiN) layer is formed above the exposed copper in order to form a dielectric barrier layer. The copper interconnect is fully encapsulated from the adjacent material by the TiN (or Ta) and the SiN layers.

High confinement micron-scale silicon nitride high Q ring resonator

Abstract: We demonstrate high confinement, low-loss silicon nitride ring resonators with intrinsic quality factor (Q) of 3∗106 operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.

Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors

Abstract: We have measured the time and temperature dependence of the two prominent instability mechanisms in amorphous silicon thin‐film transistors, namely, the creation of metastable states in the a‐Si:H and the charge trapping in the silicon nitride gate insulator. The state creation process shows a power law time dependence and is thermally activated. The charge trapping process shows a logarithmic time dependence and has a very small temperature dependence. The results for the state creation process are consistent with a model of Si dangling bond formation in the bulk a‐Si:H due to weak SiSi bond breaking stabilized by diffusive hydrogen motion. The logarithmic time dependence and weak temperature dependence for the charge trapping in the nitride suggest that the charge injection from the a‐Si:H to the nitride is the rate limiting step and not subsequent conduction in the nitride.

Handbook of Ceramic Composites

Abstract: Preface Ceramic Fibers Oxide Fibers A R Bunsell Non-oxide (Silicon Carbide) Fibers J A DiCarlo and H-M Yun Non-oxide/Non-oxide Composites Chemical Vapor Infiltrated SiC/SiC Composites (CVI SiC/SiC) J Lamon SiC/SiC Composites for 1200 C and Above J A DiCarlo, H-M Yun, G N Morscher, and R T Bhatt Silicon Melt Infiltrated Ceramic Composites (HiPerCompTM) G S Corman and K L Luthra Carbon Fibre Reinforced Silicon Carbide Composites (C/SiC, C/C-SiC) W Krenkel Silicon Carbide Fiber-Reinforced Silicon Nitride Composites R T Bhatt MoSi2-Base Composites M G Hebsur Ultra High Temperature Ceramic Composites M J Gasch, D T Ellerby and S M Johnson Non-oxide/Oxide Composites SiC Fiber-Reinforced Celsian Composites N P Bansal In Situ Reinforced Silicon Nitride - Barium Aluminosilicate Composite K W White, F Yu and Y Fang Silicon Carbide and Oxide Fiber Reinforced Alumina Matrix Composites Fabricated Via Directed Metal Oxidation A S Fareed SiC Whisker Reinforced Alumina T Tiegs Mullite-SiC Whisker and Mullite-ZrO2-SiC Whisker Composites R Ruh NextelTM 312/Silicon Oxycarbide Ceramic Composites S T Gonczy and J G Sikonia Oxide/Oxide Composites Oxide-Oxide Composites K A Keller, G Jefferson and R J Kerans WHIPOX All Oxide Ceramic Matrix Composites M Schmucker and H Schneider Alumina-Reinforced Zirconia Composites S R Choi and N P Bansal Glass andGlass-Ceramic Composites Continuous Fibre Reinforced Glass and Glass-Ceramic Matrix Composites AR Boccaccini Dispersion-Reinforced Glass and Glass-Ceramic Matrix Composites J A Roether and A R Boccaccini Glass Containing Composite Materials: Alternative Reinforcement Concepts AR Boccaccini