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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


Papers
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Proceedings ArticleDOI
20 Mar 2016
TL;DR: The relative benefits of Silicon nitride and silicon photonics are discussed, which provide an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment.
Abstract: Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.

111 citations

Journal ArticleDOI
TL;DR: In this paper, the fabrication of dense Si3N4/SiC nanocomposite materials that contained 2.5-30 wt% SiC via gas-pressure sintering and hot pressing was investigated.
Abstract: The fabrication of dense Si3N4/SiC nanocomposite materials that contained 2.5-30 wt% SiC via gas-pressure sintering and hot pressing was investigated. The SiC particles originated from admixed commercial SiC powders, SiCN powders produced by plasma synthesis, in situ reaction pyrolysis of carbon-coated Si3N4 particles, and pyrolysis of a polycarbosilazane-based SiCN precursor. Based on thermodynamic calculations, criteria for minimum liquid-phase decomposition during sintering were developed. The best sintering results were obtained for sintering cycles that observed this criteria. Materials that contained plasma-synthesized SiCN exhibited high strengths (835-995 MPa) and fracture toughness values (7.4-7.8 MPam1/2) at room temperature. Post-sintering thermal treatments led to a strength reduction.

110 citations

Patent
24 Aug 2015
TL;DR: In this article, a plurality of plasma enhanced atomic layer deposition (PEALD) cycles are used to form silicon nitride thin films on a substrate in a reaction space under high pressure, where at least one PEALD cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 to 500 Torr within the reaction space.
Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space In some embodiments the silicon precursor is a silyly halide, such as H 2 SiI 2 In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF

110 citations

Patent
28 Dec 2001
TL;DR: In this paper, a low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer consisting of titanium oxide, a layer containing silicon nitride, or a sub-layer layer containing titanium oxide in combination with a sublayer containing silicon oxide; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitric layers; a fourth layer including ag; and a fifth layer including silicon nitrous oxide; the color of the coatings can be varied over a wide range by
Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag. Dividing the first layer of titanium oxide, the Ag layers, and/or the third layer with a sublayer of oxidized metal can provide greater thermal and mechanical stability to the respective layers.

110 citations

Journal ArticleDOI
TL;DR: In this paper, light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing and the SRN external quantum efficiency was measured.
Abstract: Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing and the SRN external quantum efficiency was measured. The SRN light emission temperature dependence and recombination dynamics were also studied. Small emission thermal quenching from 4 to 330 K with wavelength dependent, nanosecond recombination lifetime was observed. Light emission from SRN systems can provide alternative routes towards the fabrication of efficient Si-based optical devices.

110 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911