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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, an angle-tuned guided-mode resonance color filter is experimentally demonstrated, which exhibits blue, green, and red color responses at incident angles of 8 $^{circ}$, 20 $^{\circ}µ, and 35 $^µ$, respectively.
Abstract: A new angle-tuned guided-mode resonance color filter is experimentally demonstrated. The device is designed using numerical methods and patterned using laser interferometric lithography. It consists of a 55-nm-deep silicon nitride and air diffraction grating with a 270-nm grating period along with a 110-nm-thick silicon nitride waveguide layer deposited on a glass substrate. The fabricated filter exhibits blue, green, and red color responses at incident angles of 8 $^{\circ}$ , 20 $^{\circ}$ , and 35 $^{\circ}$ , respectively. It has a bandwidth of 10 nm with efficiency near 90%.

104 citations

Patent
29 Aug 2003
TL;DR: In this article, the silicon nitride (SiN) film is deposited on a substrate 6 with the silane (SiH 4 ) gas and nitride(N 2 ) gas used as the raw material gasses by utilizing an ICP type plasma CVD apparatus.
Abstract: PROBLEM TO BE SOLVED: To provide a method of depositing silicon nitride film of higher film quality even under lower processing temperature. SOLUTION: The silicon nitride (SiN) film is deposited on a substrate 6 with the silane (SiH 4 ) gas and nitride (N 2 ) gas used as the raw material gasses by utilizing an ICP type plasma CVD apparatus. In this case, the supply flow rate of nitrogen (N 2 ) gas is set to 10 times or more the flow rate of silane (SiH 4 ) gas, the radio frequency power for total supply flow rate of gasses (RF power: energy of electromagnetic wave inputted to a deposition chamber) is set to 3W/sccm or more, substrate temperature is set to 50 to 300°C, and deposition pressure is set to 10mTorr to 50mTorr. COPYRIGHT: (C)2005,JPO&NCIPI

103 citations

Journal ArticleDOI
TL;DR: In this article, a method to extract fixed charge as well as traps from capacitance-voltage characteristics of metal-insulator-semiconductor-heterostructure capacitors is presented.
Abstract: Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3 x 10(12) and 7.1 x 10(12) cm(-2). For the traps, the peak density of interface states is varying between 16 x 10(12) and 31 x 10(12) cm(-2) eV(-1) for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428442]

103 citations

Patent
21 Feb 2002
TL;DR: In this article, a silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane, and the reaction tube is exhausted through the exhaust pipe.
Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

103 citations

Journal ArticleDOI
TL;DR: In this paper, the compressibility and thermal expansion of cubic silicon nitride (c-Si3N4) phase were investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations.
Abstract: The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond lengths with temperature, while the lengths for the tetrahedral Si-N and N-N bonds remain almost unchanged in the temperature range 295-1075 K. (Less)

103 citations


Network Information
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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911