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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a microdisk optical resonator with 3.6 × 10.6 x 10^6 and an effective mode volume of 15 λ / n)^3 at near visible wavelengths is presented.
Abstract: Micron scale silicon nitride (SiN_x) microdisk optical resonators are demonstrated with Q = 3.6 x 10^6 and an effective mode volume of 15 (\lambda / n)^3 at near visible wavelengths. A hydrofluoric acid wet etch provides sensitive tuning of the microdisk resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the microdisks while allowing unfettered optical access for laser cooling and trapping of atoms. Measurements indicate that cesium adsorption on the SiN_x surfaces significantly red-detunes the microdisk resonances. A technique for parallel integration of multiple (10) microdisks with a single fiber taper is also demonstrated.

103 citations

Journal ArticleDOI
TL;DR: In this paper, the authors measured the wear of atomic force microscope tips translated against a variety of substrates in aqueous solutions and showed that the chemical nature of the substrate plays an important role: significant wear was observed only when the substrate surface is populated with appropriate metal-hydroxide bonds.
Abstract: Nanometer scale single asperity tribochemical wear of silicon nitride was examined by measuring the wear of atomic force microscope tips translated against a variety of substrates in aqueous solutions. We show that the chemical nature of the substrate plays an important role: significant wear was observed only when the substrate surface is populated with appropriate metal-hydroxide bonds. Mica and calcite substrates, whose water-exposed cleavage surfaces lack these bonds, produced little if any tip wear. As a function of contact force FN and scan duration t, the length of the tips in this work decreases approximately as (FNt)0.5. We propose that pressure-induced intermediate states involving hydroxyl groups form on both the tip and the substrate; chemical reactions subsequently form transient bridging chemical bonds that are responsible for tip wear.

102 citations

Patent
02 Sep 2005
TL;DR: In this paper, the authors used a silicon nitride film, which can be formed by plasma enhanced chemical vapor deposition (PCVD), as a gate insulating film in a thin film transistor having a top gate structure and using an oxide semiconductor thin film mainly composed of zinc oxide ZnO.
Abstract: PROBLEM TO BE SOLVED: To use a silicon nitride film, which can be formed by plasma enhanced chemical vapor deposition (PCVD), as a gate insulating film in a thin film transistor having a top gate structure and using an oxide semiconductor thin film mainly composed of zinc oxide ZnO While using the gate insulating film as a two-layer structure, by adjusting the nitrogen concentration and hydrogen concentration of each insulating film, the zinc oxide (ZnO) semiconductor thin film was protected from reduction and the generation of leakage current was suppressed And thin film transistors with high current drive capability A top gate type thin film transistor having a semiconductor thin film layer made of an oxide mainly composed of zinc oxide ZnO and a gate insulating film made of silicon nitride (SiNx), wherein the gate insulating film is the semiconductor thin film layer A first gate insulating film covering at least the upper surface of the first gate insulating film, and a second gate insulating film covering at least the side surfaces of the first gate insulating film and the semiconductor thin film, and the first gate insulating film and the second gate insulating film A thin film transistor, wherein the film is made of silicon nitride (SiNx) having a different composition [Selection] Figure 1

102 citations

Patent
04 Dec 1997
TL;DR: In this paper, an embodiment of the instant invention is presented for forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface, forming an oxygen-containing layer (layer 14), subjecting the oxygencontaining layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22).
Abstract: An embodiment of the instant invention is a method of forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer 14) on the semiconductor substrate; and subjecting the oxygen-containing layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22). Using this embodiment of the instant invention, the dielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containing layer is an SiO2 layer or it is comprised of oxygen and nitrogen (preferably an oxynitride layer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen is introduced to the plasma to form the nitrogen containing plasma. The source of nitrogen is preferably comprised of a material consisting of: N2, NH3, NO, N2 O, or a mixture thereof.

102 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present the results of a comprehensive series of measurements on glow discharge (plasma)deposited silicon nitride films SiNx:H, with x in the range 0
Abstract: We present the results of a comprehensive series of measurements on glow‐discharge (plasma) ‐deposited silicon nitride films SiNx:H, with x in the range 0

102 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911