Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: The electrical transport mechanism in these devices was investigated and the excitation cross section for the 1535 nm Er emission was measured under electrical pumping, resulting in a value (1.2×10−15 cm2) comparable to optical pumping as mentioned in this paper.
Abstract: Electrical devices based on Erbium (Er) doping of silicon nitride have been fabricated by reactive cosputtering and intense, room temperature Er electroluminescence was observed in the visible (527, 550, and 660 nm) and near-infrared (980 and 1535 nm) spectral ranges at low injection voltages (<5 V EL turn on). The electrical transport mechanism in these devices was investigated and the excitation cross section for the 1535 nm Er emission was measured under electrical pumping, resulting in a value (1.2×10−15 cm2) comparable to optical pumping. These results indicate that Er-doped silicon nitride has a large potential for the engineering of light sources compatible with Si technology.
101 citations
101 citations
TL;DR: In this paper, a trilayer dielectric was used as a gate insulator for (In,Ga)As insulated gate field effect transistors (IGFETs).
Abstract: We have deposited silicon nitride (Si3N4) and silicon oxide (SiO2) thin films using remote plasma enhanced chemical vapor deposition (RPECVD). We have characterized the chemical composition of the films by infrared absorption (IR), x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and Rutherford backscattering (RBS), and have studied the electrical properties in metal insulator semiconductor (MIS) device configurations. We have configured the deposition system and adjusted gas flow rates in order to minimize: (a) O contamination in the Si3N4 films; and (b) OH groups in the SiO2 films. This paper describes the deposition apparatus and the process, and presents a phenomenological model for the plasma phase and surface reactions involved. We have combined both types of insulators in a trilayer dielectric that has been used as a gate insulator for (In,Ga)As insulated gate field effect transistors (IGFET’s). We have found that the electrical properties of these devices are superior to ...
100 citations
TL;DR: In this article, the authors characterized the thermoptic properties of silicon nitride ring resonators between 18 and 300 K and found that the resonant modes show low temperature dependence at cryogenic temperatures and higher dependence as the temperature increases.
Abstract: In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes show low temperature dependence at cryogenic temperatures and higher dependence as the temperature increases. We find the Thermo-optic coefficients of PECVD silicon nitride and silicon oxide to be $2.51 \pm 0.08\ \text{E}$ - $5\ \text{K}^{-1}$ and $0.96 \pm 0.09\ \text{E}$ - $5\ \text{K}^{-1}$ at room temperature while decreasing by an order of magnitude when cooling to 18 K. To show the effect of variations in the thermo-optic coefficients on device performance, we study the tuning of a fully integrated electrically tunable filter as a function of voltage for different temperatures. The presented results provide new practical guidelines in designing photonic circuits for studying low-temperature optical phenomena.
100 citations
TL;DR: A platform based on silicon nitride nanomembranes is presented for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals and enhanced coupling is demonstrated for microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam.
Abstract: Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.
100 citations