Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Method of making programmable low impedance interconnect diode element

Abstract: A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type. A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.

Harmonic generation in silicon nitride ring resonators.

Abstract: We demonstrate second- and third-harmonic generation in a centrosymmetric CMOS-compatible material using ring resonators and integrated optical waveguides. The χ(2) response is induced by using the nanoscale structure of the waveguide to break the bulk symmetry of silicon nitride (Si3N4) with the silicon dioxide (SiO2) cladding. Using a high-Q ring resonator cavity to enhance the efficiency of the process, we detect the second-harmonic output in the visible wavelength range with milliwatt input powers at telecom wavelengths. We also observe third-harmonic generation from the intrinsic χ(3) susceptibility of the silicon nitride. Phase matching of the harmonic processes occurs due to the near coincidence of indices of refraction of the fundamental mode at the pump frequency and the corresponding higher-order modes of the harmonic fields.

Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors

Abstract: The most important instability mechanism in amorphous silicon‐silicon nitride thin‐film transistors is charge trapping in the silicon nitride layer, which leads to a threshold voltage shift (ΔVT). We have measured the time, temperature, and gate voltage dependence of ΔVT and conclude that the rate limiting process, in the charge transfer from semiconductor to insulator, is the conduction in the nitride by variable‐range hopping. The threshold shift (under positive bias) is temperature dependent with an activation energy of 0.3 eV. This activation energy is identified with the mean hop energy required to inject charge deep into the silicon nitride at the low applied fields appropriate to transistor operation.

Silicon-based sleeve devices for chemical reactions

Abstract: A silicon-based sleeve type chemical reaction chamber (41) that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (45) (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Adhesive and Friction Forces between Chemically Modified Silicon and Silicon Nitride Surfaces

Abstract: We report the results of probing adhesion and friction forces between surfaces with functional terminal groups with chemically modified scanning probe microscopy (SPM) tips. Surfaces with terminal groups of CH3, NH2, and SO3H were obtained by direct chemisorption of silane-based compounds on silicon/silicon nitride surfaces. We studied surface properties of the resulting self-assembled monolayers (SAMs) in air and aqueous solutions with different pHs. Work of adhesion, “residual forces”, and friction coefficients was obtained for four different types of modified tips and surfaces. Absolute values of the work of adhesion between various surfaces, Wad, were in the range 0.5−8 mJ/m2. The work of adhesion for different modified surfaces correlated with changes of solid−liquid surface energy estimated from macroscopic contact-angle measurements. Friction properties varied with pH in a register with adhesive forces showing a broad maximum at intermediate pH values for a silicon nitride/silicon nitride mating pa...