Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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Patent•
19 Oct 1988
TL;DR: In this article, a diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity.
Abstract: A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention
100 citations
Patent•
19 Jun 2014TL;DR: In this article, a gas phase etch using partial remote plasma excitation is described, where plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while retaining polysilicon.
Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while retaining silicon, such as polysilicon.
99 citations
TL;DR: In this paper, an ultrathin oxide is grown at room temperature by soaking the silicon wafers in a solution of nitric acid prior to the deposition of the silicon nitride antireflection coating film.
Abstract: We have developed a simple method to passivate industrially produced boron-doped emitters for n-type base silicon solar cells using an ultrathin (∼1.5nm) silicon dioxide layer between the silicon emitter and the silicon nitride antireflection coating film. This ultrathin oxide is grown at room temperature by soaking the silicon wafers in a solution of nitric acid prior to the deposition of the silicon nitride antireflection coating film. The n-type solar cells processed in such a way demonstrate a conversion efficiency enhancement of more than 2% absolute over the solar cells passivated without the silicon dioxide layer.
99 citations
TL;DR: In this article, a transparent barrier structure consisting of silicon oxide (SiO x )/silicon nitride (SiN x ) stacks was deposited on a polycarbonate substrate at 80°C by plasmaenhanced chemical vapor deposition.
Abstract: A transparent barrier structure consisting of silicon oxide (SiO x )/silicon nitride (SiN x ) stacks was deposited on a polycarbonate substrate at 80°C by plasma-enhanced chemical vapor deposition. Details of radio-frequency (rf) power effects on the SiO x and SiN x film properties in terms of etching rate, refractive index, internal stress, and water vapor transmission rate (WVTR) were investigated. It was found that the impermeability, flexibility, and optical property of the SiO x /SiN x barrier films can be tailored by varying the rf power. A gradual decrease in the compressive internal stress of each stack film was designed to prevent the stress-induced cracks during the multilayer deposition process. The WVTR value of the optimum barrier structure (SiN x + 6 pairs of SiO x /SiN x ) can reduce to 3.12 X 10 -6 g/m 2 /day under a calcium test (100 days at 25°C, 40% relative humidity). After 5000 cyclic bending tests in a compressive mode, the WVTR value can keep below 3.54 X 10 -5 g/m 2 /day. The performance of the SiO x /SiN x barrier stacks presented has high potential for future flexible electronics applications.
99 citations
Patent•
18 Oct 2005TL;DR: A light-shieldable film is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromIUM oxynitride or the like.
Abstract: A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.
99 citations