Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: Friction and wear properties of silicon nitride were investigated using ball-on-disk tribometer under various relative humidity levels (RHL), and the results showed that the influence of humidity depends on the material of the couples as mentioned in this paper.
Abstract: Friction and wear properties of silicon nitride were investigated using ball-on-disk tribometer under various relative humidity levels (RHL). Friction tests were conducted against various metals (copper, nickel, titanium, aluminium). The results show that the influence of humidity depends on the material of the couples. Tribological behaviour of silicon nitride sliding on very reactive metals such as titanium and aluminium is not influenced by RHL. In contrast, the friction coefficient and wear mechanism of nickel and copper are strongly affected by adsorbed films of water vapour. Tribological properties of Si 3 N 4 /Si 3 N 4 couple were also studied and the effect of humidity was analyzed.
99 citations
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TL;DR: In this article, it was shown that non-metallic single crystals with a diamond-like structure, such as SiC, BP, and AlN, have high intrinsic thermal conductivities of over 300 W m−1 K−1,1,2.
Abstract: Since the confirmation that nonmetallic single crystals with a diamond-like structure, such as SiC, BP, and AlN, have high intrinsic thermal conductivities of over 300 W m−1 K−1,1,2 a great deal of effort has been focused on the development of nonoxide polycrystalline ceramics with high thermal conductivity.
99 citations
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26 Dec 2001TL;DR: In this article, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surfaces of a silicon oxide film.
Abstract: In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.
98 citations
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TL;DR: In this article, the dynamic running-in process of silicon nitride sliding in water under the conditions of load at 1-3 N, sliding velocity at 30-120 mm s−1 and temperature at 20-80°C with a pin-on-disc apparatus was studied.
98 citations
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21 May 1997
TL;DR: In this paper, a tungsten damascene local interconnect structure includes a silicon nitride etch stop layer which is formed using Plasma Enhanced Chemical Vapor Deposition (PECVD) at a temperature of at least 480°C.
Abstract: A semiconductor memory device such as a flash Electrically Erasable Programmable Read-Only Memory (Flash EEPROM) includes a floating gate with high data retention. A tungsten damascene local interconnect structure includes a silicon nitride etch stop layer which is formed using Plasma Enhanced Chemical Vapor Deposition (PECVD) at a temperature of at least 480° C. such that the etch stop layer has a very low concentration of hydrogen ions. The minimization of hydrogen ions, which constitute mobile positive charge carriers, in the etch stop layer, minimizes recombination of the hydrogen ions with electrons on the floating gate, and thereby maximizes data retention of the device.
98 citations