Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Electrical Properties of Vapor‐Deposited Silicon Nitride and Silicon Oxide Films on Silicon

Abstract: The electrical properties of vapor‐deposited silicon nitride and silicon oxide films on silicon have been investigated. The silicon nitride films were produced by the reaction at 950°C, while the oxides were prepared at 400°C using the reaction. The properties were compared with those of thermal oxides prepared in dry O2 at 1200°C. As contrasted to the thermal oxides, the silicon nitride films are characterized by polarization and room temperature trapping instabilities, relatively high conductance, and high surface state charge densities. The vapor‐deposited oxides tend to resemble the nitrides in those properties which are associated with the silicon‐ dielectric interface, but the bulk properties are more like those of thermal oxides.

Granular silicon carbide abrasive grain coated with refractory material, method of making the same and articles made therewith

Abstract: Improved granular abrasive material comprises silicon carbide particles at least partially coated with an integral, durable surface layer of a hard refractory material comprising metal nitride or carbide. Hard refractory materials which provide a useful coating include, for example, silicon nitride or carbide, titanium nitride or carbide, sialon, and others. The surface layer is preferably provided by chemical vapor deposition, most preferably utilizing a fluidized bed. The improved granular abrasive material is particularly useful in various abrasive products such as coated abrasive products, nonwoven abrasive products and abrasive grinding wheels.

Selective deposition of silicon nitride films for spacer applications

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.

Precursor-derived Si-(B-)C-N ceramics : thermolysis, amorphous state and crystallization

Abstract: The preparation of silicon nitride- and carbide-based ceramics by solid-state thermolysis of polysilazanes and polysilylcarbodiimides is described Results on the ceramization of the preceramic compounds and the architecture of the corresponding amorphous states obtained by spectroscopic means and by X-ray and neutron scattering are reviewed Fundamental correlations between the composition and structure of the preceramic compounds and the architecture of the amorphous state are revealed Furthermore, the crystallization behavior of the amorphous precursor-derived Si–C–N ceramics is treated Moreover, the influence of boron on the thermal stability of the amorphous state is described The high-temperature behavior of these Si–B–C–N solids can be correlated with their phase composition Ceramic materials with compositions located close to the three-phase equilibrium SiC + BN + C exhibit a high temperature stability up to 2000 °C This effect is accompanied by the formation of a metastable solid consisting of Si3N4 and SiC nanocrystals that are embedded in a turbostratic B–C–N matrix phase Based on thermodynamic considerations, a model for the high-temperature stability effect is proposed Copyright © 2001 John Wiley & Sons, Ltd