Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: In this paper, the surface passivation of low resistivity singlecrystalline p-silicon wafers is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasmaenhanced chemical vapor deposition system.
Abstract: Outstanding surface passivation of low‐resistivity single‐crystalline p‐silicon is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasma‐enhanced chemical vapor deposition system. The effective surface recombination velocity Seff is determined as a function of the bulk injection level from light‐biased photoconductance decay measurements. On polished as well as chemically textured silicon wafers we find that our remote plasma silicon nitride provides better surface passivation than the best high‐temperature thermal oxides ever reported. For polished 1.5 and 0.7 Ω cm p‐silicon wafers, record low Seff values of 4 and 20 cm/s, respectively, are presented.
304 citations
TL;DR: In this article, a dielectric function model yielding a Gaussian shape of the absorption lines and satisfying Kramers-Kronig relations was suggested for modeling of infrared spectra.
Abstract: For the modeling of infrared spectra it is a common approach to use a dielectric function that treats the vibrational modes as damped harmonic oscillators. This model was found to be rather crude for some applications to amorphous solids. A dielectric function model yielding a Gaussian shape of the absorption lines and satisfying Kramers–Kronig relations is suggested. The model function is constructed by a convolution of a Gaussian function with the dielectric function of the damped harmonic oscillator model. An analytical solution of this integral is given. It is demonstrated that this model describes the spectra of thermally grown ultrathin (1.3 nm) silicon oxide films, plasma‐deposited silicon films, plasma‐deposited silicon nitride films, and amorphous aluminum oxide films very well. The physical motivation of the dielectric function model suggested is the randomness of the vibrational frequencies in an amorphous structure.
300 citations
TL;DR: It is shown that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer and envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 μm.
Abstract: Photonic devices on silicon offer the benefit of combining advanced electronic functionality with the high bandwidth of silicon photonics. Now, efficient second-order nonlinear activity in silicon waveguides strained by a silicon nitride top layer considerably advances the potential of all-optical data management on a silicon platform.
297 citations
TL;DR: In this article, the size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy and the photoluminescence peak energy as E(eV)=1.16+11.8∕d2 is evidence for the quantum confinement effect.
Abstract: Silicon nanocrystals were in situ grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38eV) to the ultraviolet (3.02eV). The fitted photoluminescence peak energy as E(eV)=1.16+11.8∕d2 is evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.
297 citations
Patent•
14 Jul 2016TL;DR: In this paper, a laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate, and a through hole extending in the lamination direction is formed.
Abstract: A laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate. Next, a through hole extending in the lamination direction is formed in the laminated body. Next, a selective nitridation process is performed to selectively form a charge layer made of silicon nitride in a region of an inner surface of the through hole corresponding to the electrode film. Next, a high-pressure oxidation process is performed to form a block layer made of silicon oxide between the charge layer and the electrode film. Next, a tunnel layer made of silicon oxide is formed on an inner side surface of the through hole. Thus, a flash memory can be manufactured in which the charge layer is split for each electrode film.
297 citations