Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Capped dual metal gate transistors for CMOS process and method for making the same

Abstract: A first gate ( 120 ) and a second gate ( 122 ) are preferably PMOS and NMOS transistors, respectively, formed in an n-type well ( 104 ) and a p-type well ( 106 ) In a preferred embodiment, first gate ( 120 ) includes a first metal layer ( 110 ) of titanium nitride on a gate dielectric ( 108 ), a second metal layer ( 114 ) of tantalum silicon nitride and a silicon containing layer ( 116 ) of polysilicon Second gate ( 122 ) includes second metal layer ( 114 ) of a tantalum silicon nitride layer on the gate dielectric ( 108 ) and a silicon containing layer ( 116 ) of polysilicon First spacers ( 124 ) are formed adjacent the sidewalls of the gates to protect the metals from chemistries used to remove photoresist masks during implant steps Since the chemistries used are selective to polysilicon, the spacers ( 124 ) need not protect the polysilicon capping layers, thereby increasing the process margin of the spacer etch process The polysilicon cap also facilitates silicidation of the gates

Deposition of boron and carbon containing materials

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

Structural analysis of Ti1−xSixNy nanocomposite films prepared by reactive magnetron sputtering

Abstract: In this paper, we report on the preparation of thin films resulting from additions of Si to TiN matrix, by r.f. reactive magnetron sputtering. Results of X-ray diffraction (XRD) in both θ –2 θ and α –2 θ scans showed that a mixture of two phases is present, where the first is most likely fcc TiN. The higher lattice parameter of this phase, about 0.429 nm (0.424 nm for bulk TiN), could be explained by taking into account that a correction of the residual stress effect on peak positions might slightly decrease the value of the lattice parameter (around 1%). Regarding phase 2, and although the exact nature of its composition is more difficult to evaluate, we believe that it is also a cubic lattice consisting of TiSiN, where the Si could be occupying Ti positions within the TiN lattice. This would explain the low value of the lattice parameter, which by assuming a cubic structure would be 0.418 nm. Concerning texture evolution, phase 1 revealed some variations in preferential growth, which changed from 〈111〉 for low Si additions to 〈220〉 at intermediate Si additions and finally to a weak 〈200〉 texture for large Si additions. A small amorphous region of silicon nitride for large Si additions was also observed. Fourier analysis of XRD patterns showed a decrease in the size of grains for small Si additions when compared to that of TiN. For higher Si contents, only small changes were observed, although a decrease in grain size seems to be the main tendency. The grains are within the range of 4–6 nm. High-resolution transmission electron microscopy (HRTEM) on Ti 0.63 Si 0.37 N 1.12 confirmed this nanocrystalline nature of the grains, revealing grains with sizes of about 2–3 nm.

Method of depositing ammonia free and chlorine free conformal silicon nitride film

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

High efficiency silicon nitride surface grating couplers

Abstract: High efficiency surface grating couplers for silicon nitride waveguides have been designed, fabricated, and characterized. Coupling efficiencies exceeding 60 % are reported at a wavelength of 1.31 ...