Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Manufacture of semiconductor device

Abstract: PROBLEM TO BE SOLVED: To prevent displacement in overlap of a pattern due to the expansion and contraction of a substrate. SOLUTION: An excess film 3 in the peripheral section of a chip is removed beforehand, and a substrate 1 is returned (S3) to its size close to an original size 1a in a shrunk substrate 1b (S2) by depositing a film (a silicon nitride film 3) having large stresses on the substrate (S1), and element isolation patterns 52 are formed onto the residual silicon nitride films 3-1. That is, the displacement in overlap resulting from the expansion and contraction of the substrate can be prevented, because the manufacture of the semiconductor device is constituted of a first process, in which the silicon nitride film 3 is removed except an element region in the silicon nitride film formed onto the substrate 1, a second process in which a mask for forming an element-region pattern is formed of the silicon nitride film 3 which remains after the first process, and a third process in which the substrate 1 is oxidized after the second process, then an element-isolation oxide film is shaped and the mask as the mask of oxidation is removed.

Silicon nitride circuit board

Abstract: This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D s of the high thermal conductive silicon nitride substrate and a thickness D M of the metal circuit plate satisfy a relational formula D s ≦2D M . The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

Compatibility of zinc oxide with silicon IC processing

Abstract: In this paper we present the passivation of zinc oxide by a thin silicon nitride layer. With this passivation, silicon wafers covered with zinc oxide can be further processed without contamination of the process chambers of the subsequent processes, and without damaging the zinc oxide layer. In addition, we review some process technology concerning zinc oxide: the cleaning and etching of zinc oxide and the etching of aluminium on zinc oxide.

Process and material for manufacturing semiconductor devices

Abstract: A process step and material for use in the manufacture of semiconductor devices. To facilitate the etching of unmasked silicon dioxide, silicon nitride, silicon monoxide, bare silicon layers, or various refractory metals on preselected portions of a semiconductor slice, the material is exposed to a low pressure RF generated "cold" plasma (under 325° C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon. The halocarbon is preferably a gas having one carbon atom per molecule and is preferably fully fluorine-substituted.