Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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Patent•
22 Aug 1973TL;DR: In this article, a silazane is produced by reacting ammonia with a halogenosilane and, if effected in solution, after removal of by-product ammonium chloride and optionally concentrating, the solution is directly employed for shaping.
Abstract: A melt or solution of a silazane is formed into a shaped article by molding or melt or dry extrusion and is thereafter heated in an inert atmosphere to about 800 DEG to 2,000 DEG C to decompose the silazane into a homogeneous mixture of silicon carbide and silicon nitride. The silazane is produced by reacting ammonia with a halogenosilane and, if effected in solution, after removal of by-product ammonium chloride and optionally concentrating, the solution is directly employed for shaping. The solution may be rendered spinnable by addition of small amounts of high polymers and various other additives may also be employed. Fibers produced therefrom are of satisfactory mechanical properties and are suited for use as insulation and reinforcement in laminates.
90 citations
TL;DR: In this article, the compressional behavior of a new dense form of silicon nitride with the cubic spinel structure is studied by energy dispersive x-ray diffraction, following in situ synthesis from the low pressure form by laser heating in the diamond anvil cell, combined with theoretical density functional calculations.
Abstract: The compressional behaviour of a new dense form of silicon nitride with the cubic spinel structure is studied by energy dispersive x-ray diffraction, following in situ synthesis from the low pressure form by laser heating in the diamond anvil cell, combined with theoretical density functional calculations (LDA and GGA). The unit cell dimension and the ambient temperature bulk modulus and its pressure derivative are determined to be V0 = 8.29(±0.03) A 3 /atom, K0 = 308(±5) GPa and K � 0 = 4±(0.2), in excellent agreement with theoretical calculations within the LDA and GGA. The calculated shear modulus is two to three times those of corresponding oxide spinels, and there is a substantial Cauchy violation, indicating a material with strong covalent bonding that is likely to be extremely hard.
90 citations
Patent•
05 Dec 2014TL;DR: In this paper, the etch selectively removes aluminum oxide relative to other metal oxides and silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride.
Abstract: Methods of selectively etching aluminum oxide from the surface of a patterned substrate are described. The etch selectively removes aluminum oxide relative to other metal oxides and silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing aluminum oxide to plasma effluents formed in a remote plasma from a chlorine-containing precursor and a hydrocarbon. A remote plasma is used to excite the precursors and a local plasma is used to further excite the plasma effluents and accelerate ions toward the patterned substrate.
90 citations
TL;DR: The spark plasma sintering technique was used to consolidate amorphous Si-C-N powder to obtain polycrystalline Si 3 N 4 /SiC ceramic composites as discussed by the authors.
90 citations
TL;DR: In this paper, a model based on thermal emission of charge from traps was developed to predict the threshold voltage decay of transistors stored in varying thermal environments, and demonstrated to be accurate over 7 decades of time and for temperatures between −40 and 200°C.
Abstract: The memory retention characteristics of silicon‐nitride‐oxide‐silicon nonvolatile memory devices are found to be strongly thermally activated. A model is developed based on thermal emission of charge from traps. This model accurately predicts the threshold voltage decay of transistors stored in varying thermal environments. The model is demonstrated to be accurate over 7 decades of time and for temperatures between −40 and 200 °C.
90 citations