Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Ultrasensitive string-based temperature sensors

Abstract: Resonant strings are a promising concept for ultra sensitive temperature detection. We present an analytical model for the sensitivity with which we optimize the temperature response of resonant strings by varying geometry and material. The temperature sensitivity of silicon nitride and aluminum microstrings was measured. The relative change in resonant frequency per temperature change of −1.74±0.04%/°C of the aluminum strings is more than one order of magnitude higher than of the silicon nitride strings and of comparable state-of-the-art AuPd strings.

Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric

Abstract: We report the fabrication and characterization of bottom-gate and top-gate nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) with amorphous-silicon nitride (a-SiNx:H) as the gate dielectric. The devices were fabricated using standard 13.56-MHz plasma-enhanced chemical vapor deposition at 240 degC. Here, the same 80-nm nc-Si:H channel, 300-nm a-SiNx:H gate dielectric, and 60-nm n+ nc-Si:H ohmic contact layers were used in both TFT structures. We analyzed the effects of gate configuration on TFT performance and, in particular, the electrical stability. The stability tests were carried out at a gate bias stress in the range from 20 to 40 V. The nc-Si:H TFTs demonstrated much better threshold-voltage (VT ) stability compared with the amorphous-silicon (a-Si:H) counterparts, offering great promise for applications in active-matrix organic light-emitting diode (AMOLED) displays

A hydrogen-permselective amorphous silica membrane derived from polysilazane

Abstract: A microporous amorphous silica membrane has been synthesized by thermal conversion in air of polysilazane on a silicon nitride (Si 3 N 4 ) porous substrate The porous substrate near the surface layer was penetrated by polysilazane, and converted into mesoporous amorphous silica/Si 3 N 4 composite layer Then, an active molecular sieving microporous amorphous silica thin layer was synthesized on the surface of the mesoporous composite layer The polysilazane-derived amorphous silica membrane exhibited H 2 permeance of 13 × 10 −8 mol/m 2 s Pa at 573 K, and the permeability ratio of H 2 /N 2 was measured to be 141 The effects of heat treatment condition on the meso/microporous structure development of the polysilazane-derived amorphous silica within the Si 3 N 4 porous substrate are discussed from a viewpoint of fabricating hydrogen-permselective amorphous silica membranes through polymeric precursor route

Method of manufacturing capacitor

Abstract: In the invention, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding. When the resultant structure is placed in a low-pressure CVD furnace to deposit a silicon nitride film, no natural oxide film is grown on the polycrystalline silicon layer. Hence, when the invention is applied to manufacture of a capacitor for a memory cell, the inter-layer insulative film of the capacitor is not too thick. As a result, a reliable capacitor suitable for micropatterning of elements can be formed between the first and second polycrystalline silicon layers.