Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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Patent•
12 Nov 2003
TL;DR: The precursors of the invention are amenable to use in low temperature (e.g., <500° C) chemical vapor deposition processes, for fabrication of ULSI devices and device structures as discussed by the authors.
Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si 3 N 4 ), siliconoxynitride (SiO x N y ) and/or silicon dioxide (SiO 2 ). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
84 citations
TL;DR: In this paper, it was inferred that LPCVD oxynitrides are homogeneous on an atomic scale, i.e., the silicon atoms are randomly surrounded by oxygen and nitrogen atoms, and are therefore not to be conceived of as a physical two phase mixture of silicon oxide and silicon nitride.
Abstract: Silicon oxynitride (SiOxNy) films have been grown by a low‐pressure chemical vapor deposition (LPCVD) process from mixtures of SiH2Cl2, N2O, and NH3 at 820 °C. The overall layer composition can be varied by adjusting the N2O/NH3 gas flow ratio. Rutherford backscattering and Auger analysis of the films indicated a uniform composition throughout the layer, irrespective of the nature of the substrate. Both the thickness and the composition of these oxynitride films can conveniently be measured with ellipsometry; the oxygen to nitrogen ratio can be derived reliably from the value of the refractive index. It is inferred that LPCVD oxynitrides are homogeneous on an atomic scale, i.e., the silicon atoms are randomly surrounded by oxygen and nitrogen atoms, and are therefore not to be conceived of as a physical two phase mixture of silicon oxide and silicon nitride. Their stability in metal–oxynitride–oxide–silicon structures is found to improve with increasing oxygen content as regards flatband voltage shift upon temperature‐bias stress.
84 citations
TL;DR: High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride and similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.
Abstract: Single-layer antireflection (AR) coating films are used to transform semiconductor injection lasers into different kinds of active device. For example, a laser whose emitting facet reflectivities (one or both) are reduced to zero is transformed into a superluminescent diode or an optical amplifier, respectively. AR coated lasers are also very desirable in various configurations of a laser in an external cavity or as sources for optical fiber sensor applications. High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride. The emitting facets of InGaAsP lasers at 1.3 and 1.55 μm as well as of AlGaAs lasers at 0.85 μm were coated. The reflectivities achieved were consistently in the 0.01–0.03% range. Similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.
84 citations
TL;DR: In this article, a set of films with N/Si ratios of 1.0 to 1.5 were produced and the intrinsic compressive stress was found to increase with increasing amounts of N-H bonding.
Abstract: Plasma enhanced chemical vapor deposited silicon nitride thin films, possessing a wide range of mechanical and physical properties, were made by changing the flow rate ratios of the various processing gases, NH3/SiH4/N2, while basically keeping the other deposition parameters constant. A set of films with N/Si ratios of 1.0 to 1.5 were produced, all showing compressive stress. The intrinsic compressive stress was found to increase with increasing amounts of N–H bonding. The density and Young’s modulus also increased with increasing amounts of N–H bonding. The values for Young’s modulus, obtained by using a Nano indenter instrument, were mainly dependent upon the film density, and the hardness to modulus ratio was 0.09 for all of the silicon nitride thin films.
84 citations
Patent•
29 Jul 2005
TL;DR: In this article, a light-shieldable film is formed on one principal plane of an optically transparent substrate, where the first light shieldable film consists of a first light-safe film 13 and a second light-helveable film 14 successively layered.
Abstract: PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI
84 citations