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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


Papers
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Journal ArticleDOI
TL;DR: Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer, and propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
Abstract: In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

81 citations

Proceedings ArticleDOI
22 Jan 2005
TL;DR: In this paper, experiments were carried out to identify the best fabrication process for reducing propagation loss in single mode waveguides comprised of silicon nitride core and silicon dioxide cladding material.
Abstract: Optical waveguide propagation loss due to sidewall roughness, material impurity and inhomogeneity has been the focus of many studies in fabricating planar lightwave circuits (PLC's) In this work, experiments were carried out to identify the best fabrication process for reducing propagation loss in single mode waveguides comprised of silicon nitride core and silicon dioxide cladding material. Sidewall roughness measurements were taken during the fabrication of waveguide devices for various processing conditions. Several fabrication techniques were explored to reduce the sidewall roughness and absorption in the waveguides. Improvements in waveguide quality were established by direct measurement of waveguide propagation loss. The lowest linear waveguide loss measured in these buried channel waveguides was 0.1 dB/cm at a wavelength of 1550 nm. This low propagation loss along with the large refractive index contrast between silicon nitride and silicon dioxide enables high density integration of photonic devices and small PLC's for a variety of applications in photonic sensing and communications.

81 citations

Journal ArticleDOI
TL;DR: Results show that Si3Nx can be functionalized with a tailor-made organic monolayer, has highly tunable wetting properties, and displays significant potential for further functionalization.
Abstract: This communication presents the first functionalization of a hydrogen-terminated silicon-rich silicon nitride (Si3Nx) surface with a well-defined, covalently attached organic monolayer. Properties of the resulting monolayers are monitored by measurement of the static water contact angle, X-ray photoelectron spectroscopy (XPS), and infrared reflection absorption spectroscopy (IRRAS). Further functionalization was performed by reaction of Si3Nx with a trifluoroethanol ester alkene (CH2=CH-(CH2)8CO2CH2CF3) followed by basic hydrolysis to afford the corresponding carboxylic acid-terminated monolayer with hydrophilic properties. These results show that Si3Nx can be functionalized with a tailor-made organic monolayer, has highly tunable wetting properties, and displays significant potential for further functionalization.

81 citations

Journal ArticleDOI
TL;DR: In this article, the fracture resilience of highly anisotropic silicon nitride has been evaluated using the Vickers indentation flaw technique, and it has been shown that the toughness of the highly-anisotropic material steeply rises in a very short crack extension, which is advantageous in avoiding catastropic fractures.
Abstract: The R-curve behavior was characterized by the Vickers indentation flaw technique, for highly anisotropic silicon nitride, a silicon nitride whose fibrous grains are highly aligned. The measured crack lengths ranged from 30 to 500 μm. The fracture resistance of a conventional self-reinforced silicon nitride was determined for comparison using the same procedures. While in the self-reinforced material several hundred micrometers of crack extension were required to obtain a high fracture toughness, the highly anisotropic material exhibited a high toughness from the beginning of the measured crack length range with little increase in the following range. It is suggested that the toughness of the highly anisotropic material steeply rises in a very short crack extension, which is advantageous in avoiding catastropic fractures.

81 citations

Patent
29 Dec 2000
TL;DR: In this article, a gate insulating film of silicon nitride or silicon oxynitride in the active regions of the semiconductor substrate is formed, and an amorphous TaON insulating material is crystallized.
Abstract: A method for forming a gate insulating film for a semiconductor device comprising forming an insulating film of silicon nitride or silicon oxynitride in the active regions of the semiconductor substrate; forming an amorphous TaON insulating film on the insulating film; and crystallizing the amorphous TaON insulating film. Using TaON as the primary gate insulating film provides a high dielectric constant (∈=20˜25), and thus produces a gate insulating film having properties superior to those possible with silicon dioxide gate films and thus more suitable for use in highly integrated semiconductor devices.

81 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911