Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

A composition and method for selectively etching a silicon nitride film

Abstract: The invention relates to an aqueous phosphoric acid etch bath composition with a readily soluble silicon containing composition. The baths are used in the etching step of composite semiconductor device manufacturing.

Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory

Abstract: A nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and under the second insulating layer, respectively, and a group IV semiconductor layer, silicon quantum dots, or metal quantum dots interposed between the first dielectric layer and the second dielectric layer. The provided SONSNOS structure memory device improves a programming rate and the capacity of the memory.

Method of manufacturing semiconductor device

Abstract: PROBLEM TO BE SOLVED: To solve a problem that characteristics of a semiconductor device are deteriorated due to irregularities on an inner wall of a trench or a pointed shape of an end portion of the trench. SOLUTION: A sacrificing oxide film is formed in a trench 26 by using a mixture solution of an alkaline solution and an anionic surfactant having an affinity with both silicon, of a semiconductor material and the alkaline solution to reduce irregularities on an inner wall 28 of the trench 26. Since a silicon nitride film 22 has a higher etching speed than a silicon oxide film 24, this sacrificing film is rapidly etched when removed by etching. Therefore, pointing of an end portion 31 of the trench 26 can be prevented since there is no member that prevents an etchant from being applying to the end portion 31.

Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen

Abstract: Very thin uniform silicon nitride films less than 100A have been obtained on silicon wafers by direct thermal reaction with nitrogen at temperatures ranging from 1200° to 1300°C. Small amounts of water or oxygen in reaction mixture caused vapor etching which gave rise to local crystallization. By eliminating both from the reaction ambient to less than 1 ppm, amorphous silicon nitride films can be deposited. These films have been found to have properties similar to those of CVD by investigations of Auger electron spectroscopy, infrared spectroscopy, and ellipsometry. Remarkable masking effects of the films against oxidation and phosphorus diffusion have been found.

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Abstract: A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.