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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


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Patent
Dengliang Yang1, Faisal Yaqoob1, Pilyeon Park1, Helen H. Zhu1, Joon Hong Park1 
21 Sep 2016
TL;DR: In this paper, a method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on the substrate support of a substrate processing chamber, which includes an upper chamber region, an inductive coil arranged outside of the upper chamber, a lower chamber region including the substrate supports and a gas dispersion device.
Abstract: A method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on a substrate support of a substrate processing chamber The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device The gas dispersion device includes a plurality of holes in fluid communication with the upper chamber region and the lower chamber region The method includes supplying an etch gas mixture to the upper chamber region and striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil The etch gas mixture etches silicon nitride, promotes silicon dioxide passivation and promotes polysilicon passivation, The method includes selectively etching the silicon nitride layer on the substrate and extinguishing the inductively coupled plasma after a predetermined period

78 citations

Journal ArticleDOI
TL;DR: In this article, the appearance of Raman peaks in the range 493-514 cm−1 after thermal and pulse laser treatments was interpreted as formation of silicon nanocrystals with sizes from 13 up to 5 nm depending on treatment parameters.
Abstract: Silicon nitride films of different stoichiometric composition were studied using Raman spectroscopy A Raman signal due to Si–Si, Si–N bond vibrations in silicon nanoclusters was detected in as-deposited films The appearance of Raman peaks in the range 493–514 cm−1 after thermal and pulse laser treatments was interpreted as formation of silicon nanocrystals with sizes from 13 up to 5 nm depending on treatment parameters Thermal treatment at 1200 °C allowed Si atom diffusion and its gathering in Si nanocrystals, meanwhile 5 ns pulse laser irradiation leads to crystallization of preexisting silicon nanoclusters inside the as-deposited SiNx films

78 citations

Patent
07 Jun 1988
TL;DR: In this article, a process of manufacturing silicon solar cells with efficiencies of between about 12.5 % and about 16.0 % is described, the method being characterized by forming a P/N junction adjacent the front surface of a silicon substrate and then forming a polysilazane coating on the etched front surface.
Abstract: A process of manufacturing silicon solar cells with efficiencies of between about 12.5 % and about 16.0 % is described, the method being characterized by forming a P/N junction (4) adjacent the front surface of a silicon substrate (2), subjecting the front surface of the substrate to a selected plasma surface etch treatment, and then forming a polysilazane coating (10) on the etched front surface by (a) first subjecting the substrate to an ammonia plasma treatment for a predetermined period of time so as to produce hydrogen implantation and (b) subjecting the substrate to a silane and ammonia plasma treatment to obtain additional hydrogen implantation and formation of a polysilazane (hydrogenated silicon nitride) coating. The polysilazane coating (10) is etched to form a grid electrode pattern (12A). An aluminum coating (14) is applied to the rear side of the substrate so as to form a back electrode. The exposed silicon on the front side of the substrate is coated with an adherent coating of a highly conductive metal so as to form a grid electrode (20).

78 citations

Journal ArticleDOI
TL;DR: Si 3 N 4 composite materials containing up to 60 vol.% of dispersed β-SiC particles were sintered with Y 2 O 3 and Al O 3 at 1850°C and 0·1 MPa N 2.

78 citations

Patent
27 Mar 1995
TL;DR: In this article, the selective ratio of a silicon nitride film to a silicon substrate or a silicon oxide film at a relatively high value was set in the case of removing a part of or the whole silicon nitric film formed on a silicon substrategies or silicon oxide films by selective etching.
Abstract: PURPOSE: To set the selective ratio of a silicon nitride film to a silicon substrate or a silicon oxide film at a relatively high value in the case of removing the silicon nitride film on the silicon substrate or the silicon oxide film by selective etching by using CDE. CONSTITUTION: In the case of removing a part of or the whole silicon nitride film formed on a silicon substrate or a silicon oxide film, mixed gas, which is composed of a gas containing fluorine, oxygen gas and a gas containing hydrogen atoms, is introduced into a discharge part 2 to generate plasma, and only the radical of the plasma active species is introduced into a process chamber 5 wherein the silicon substrate is stored. Thus, the silicon nitride film on the silicon substrate is selectively removed by etching.

78 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911