Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Nucleation control of diamond films by microlithographic patterning

Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. A conventional polymeric resist process may be used to deposit a pattern of high temperature resist material. With the high temperature resist in place and the polymeric resist removed, a high temperature deposition process may proceed without degradation of the resist pattern. After a desired film of material has been deposited, the high temperature resist is removed to leave the film in the pattern defined by the resist. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby

Abstract: A process for forming silicon nitride layers on silicon substrates which includes initially heating the silicon substrates in a rapid thermal processor and in a substantially oxygen-free and residual moisture free environment to form a thin Si 3 N 4 layer directly on the silicon surface which is free of any measurable native SiO 2 thereon. Then, the nitridized wafers are transferred into a conventional nitride furnace where the thin Si 3 N 4 layers may be increased in thickness by a desired amount. Typically, the initial or first Si 3 N 4 layer thickness will be about 10-30 angstroms and the second Si 3 N 4 layer will be on the order of 80 angstroms or more to form a composite Si 3 N 4 layer of about 100-150 angstroms in total thickness. This novel process and the high dielectric constant integrated circuit capacitors produced thereby are highly useful in the manufacture of certain very large scale integrated circuit (VLSI) components such as dynamic random access memories and the like.

Low temperature sin deposition methods

Abstract: A silicon nitride layer is deposited on a substrate within a processing region by introducing a silicon containing precursor into the processing region, exhausting gases in the processing region including the silicon containing precursor while uniformly, gradually reducing a pressure of the processing region, introducing a nitrogen containing precursor into the processing region, and exhausting gases in the processing region including the nitrogen containing precursor while uniformly, gradually reducing a pressure of the processing region. During the steps of exhausting, the slope of the pressure decrease with respect to time is substantially constant.

Single component monomer for silicon nitride deposition

Abstract: Method of preparing silicon nitride film by glow discharge from the decomposition of liquid trisilylamine, (SiH 3 ) 3 N, which is a volatile monomer. In this connection, the use of a single monomer as diluted with an inert gas enables greater uniformity to be achieved in the deposition of silicon nitride films. Further, the presence of Si-N bonds in the monomer enables more control and better stoichiometry in the deposited films.