Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: In this article, the bulge test is successfully extended to the determination of the fracture strength of thin films by accurately describing the deflection profile of the loaded long membranes, including the prestress and bending stiffness of the membrane material into the load-deflection response.
Abstract: The bulge test is successfully extended to the determination of the fracture strength of thin films by accurately describing the deflection profile of the loaded long membranes. The model includes the prestress and bending stiffness of the membrane material into the load-deflection response. The feasibility of this method is demonstrated with LPCVD silicon nitride films with maximum strengths between 10.8 GPa and 11.7 GPa.
75 citations
TL;DR: In this article, the electrical properties of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field effect transistors (FETs) on silicon nitride (Si3N4) substrates were reported.
Abstract: We report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field-effect transistors (FETs) on silicon nitride (Si3N4) substrates. We show that Si3N4 substrates offer comparable electrical performance to thermally grown SiO2 substrates for MoS2 FETs, offering an attractive passivating substrate for transition-metal dichalcogenides (TMD) with a smooth surface morphology. Single-crystal MoS2 grains are grown via vapor transport process using solid precursors directly on low pressure CVD Si3N4, eliminating the need for transfer processes which degrade electrical performance. Monolayer top-gated MoS2 FETs with Al2O3 gate dielectric on Si3N4 achieve a room temperature mobility of 24 cm2/V s with Ion/Ioff current ratios exceeding 107. Using HfO2 as a gate dielectric, monolayer top-gated CVD MoS2 FETs on Si3N4 achieve current densities of 55 μA/μm and a transconductance of 6.12 μS/μm at Vtg of −5 V and Vds of 2 V. We observe an increase in mobility a...
75 citations
TL;DR: On-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and experimentally measured quality factor of 3,300 are demonstrated and 6-fold photoluminescence enhancement of a hBN single photon emission at room temperature is observed.
Abstract: Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si3N4 hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.
75 citations
Patent•
NEC1
TL;DR: In this paper, a method for an enhanced deposition control includes forming a transistor on a substrate of a semiconductor wafer, and depositing a silicon nitride layer on the transistor and the substrate in a reactor at a pressure of at least approximately 10 4 Pa.
Abstract: A method for an enhanced deposition control includes forming a transistor on a substrate of a semiconductor wafer, and depositing a silicon nitride layer on the transistor and the substrate in a reactor at a pressure of at least approximately 10 4 Pa.
75 citations
TL;DR: Simulations show that this approach may be used to achieve the dispersion characteristics required for broadband, phase-matched, four-wave mixing processes, while simultaneously maintaining strong modal confinement within the Si core for high effective nonlinearity.
Abstract: We introduce and study numerically a method for dispersion engineering of Si nanophotonic wires using a thin conformal silicon nitride film deposited around the Si core. Simulations show that this approach may be used to achieve the dispersion characteristics required for broadband, phase-matched, four-wave mixing processes, while simultaneously maintaining strong modal confinement within the Si core for high effective nonlinearity.
75 citations