Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Effect of Selected Impurities on the High Temperature Mechanical Properties of Hot-Pressed Silicon Nitride

Abstract: The effect of impurities on the high temperature mechanical properties of hot-pressed silicon nitride has been determined. Selected impurity additions were made to both relatively pure α-phase and Β-phase silicon nitride starting powders. These powders were hot-pressed to full density using 5 wt % MgO as the pressive additive. The silicon nitride hot-pressed from the α-phase powder exhibited higher strength at both 25 and 1400‡ C than that fabricated from the Β-phase powder. The impurity additions had no effect on the room temperature mechanical properties. The CaO additions had the most significant effect on the high temperature mechanical properties. In both the material hot-pressed from the α-phase and Β-phase powders, increasing CaO additions severely reduced the high temperature strength and increased the amount of non-elastic deformation observed prior to fracture. Although alkali additions (Na2CO3, Li2CO3, K2CO3) also tended to have the same effects as the CaO, the high volatility of these compounds resulted in a much reduced concentration in the hot-pressed material, thus minimizing somewhat their tendency to enhance the high temperature strength degradation. The Fe2O3 and Al2O3 had no apparent effect on the high temperature mechanical properties.

Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride

Abstract: The optimum condition of plasma-enhanced chemical vapor deposition to deposite silicon nitride (SiNx) film and its application as a gate insulator of a-Si thin-film transistor (TFT) have been investigated. The internal stress of SiNx in the range of 4.3×109 dyn/cm2 tensile to 8.0×109 dyn/cm2 compressive is found to be controllable by changing the ratio of H2 and N2 in the source gases without affecting the optical band gap. Satisfactory TFT characteristics and high reliability are realized by using a gate insulator of SiNx having either stoichiometric or N-rich composition which shows the large optical band gap.

Device structure for storing charge and method therefore

Abstract: A semiconductor device structure for storing charge has a silicon nitride layer, in which a plurality of nanoclusters are sandwiched between oxide layers. The nanoclusters and the silicon nitride make up a storage region, which is particularly useful in non-volatile memories. The nanoclusters provide a repository for holes or electrons that jump from trap to trap in the silicon nitride when the silicon nitride is heated. This results in much of the charge, which would normally leak off from the silicon nitride at high temperatures, remaining in the storage region due to trapping in the nanoclusters. The silicon nitride layer with nanoclusters therein is formed by depositing a silicon nitride layer, then nanoclusters, and then another silicon nitride layer or by depositing a silicon-rich silicon nitride layer and subsequent heating to cause it to transform to a regular silicon nitride layer with silicon nanoclusters therein.

Dispersant‐Binder Interactions in Aqueous Silicon Nitride Suspensions

Abstract: The interaction of dispersant and binder on the surface of particles was studied to identify the effect of these additives on aqueous ceramic powder processing. Poly(methacrylic acid) (PMAA) and poly(vinyl alcohol) (PVA) were used as the dispersant and binder, respectively. The adsorption isotherms of the organic additives on silicon nitride were determined. The adsorption of PMAA was differentiated from PVA in the mixed additive system via ultraviolet spectroscopy. The electrokinetic behavior of silicon nitride was measured by using an electrokinetic sonic amplitude analyzer. As the PMAA concentration increased, the isoelectric point (pHiep) of silicon nitride shifted from pH 6.7 ± 0.1 to acidic pH values. The magnitude of the shift depended on the surface coverage of PMAA. PVA did not affect the pHiep of suspensions but did cause a moderate decrease in the near-surface potential. Finally, the rheological behavior of silicon nitride suspensions was measured to assess the stability of particles against flocculation in aqueous media; this behavior was subsequently correlated with the electrokinetic and adsorption isotherm data.

Method of cutting using silicon carbide whisker reinforced ceramic cutting tools

Abstract: Cutting tools are disclosed which are comprised of composite bodies comprising a ceramic matrix reinforced by ceramic whiskers. The ceramic matrix may be alumina or silicon nitride, and may contain toughening components. The whiskers are preferably silicon carbide, but may be other known ceramic whiskers. Whisker content in the composite is 2-40%, with higher contents generally used for tools when the expected service involves interrupted cutting and lower contents generally used for continuous cutting tools.