Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: In this paper, a pin-on-disk sliding friction and wear experiments were conducted on two different titanium alloys (Ti-6Al-4V and Ti-8Al-2Sn-4Zr-2Mo) against fixed bearing balls composed of 440C stainless steel, silicon nitride, alumina, and polytetrafluoroethylene (PTFE) at two speeds: 0.3 and 1.0 m/s.
229 citations
TL;DR: In this article, the optical and mechanical losses of commercial silicon nitride membranes have been measured, and it was shown that 50nm thick, 1mm2 membranes have mechanical Q>106 at 293K and Q>107 at 300mK, well above what has been observed in devices with comparable dimensions.
Abstract: We have measured the optical and mechanical loss of commercial silicon nitride membranes. We find that 50nm thick, 1mm2 membranes have mechanical Q>106 at 293K, and Q>107 at 300mK, well above what has been observed in devices with comparable dimensions. The near-IR optical loss at 293K is less than 2×10−4. This combination of properties make these membranes attractive candidates for studying quantum effects in optomechanical systems.
229 citations
TL;DR: In this paper, a tape casting of raw powder slurry seeded with rod-like Si{sub 3}N{sub 4} particles was obtained, followed by a gas pressure sintering under 1 MPa nitrogen pressure.
Abstract: Silicon nitride with a preferred orientation of large elongated grains was obtained by tape casting of raw powder slurry seeded with rodlike {beta}-Si{sub 3}N{sub 4} particles, followed by a gas pressure sintering under 1 MPa nitrogen pressure. The large elongated grains developed from seeds lay in planes parallel to the casting direction in a two-dimensional distribution. Increased fracture toughness (11.1 MPa {center_dot} m{sup 1/2}) and bending strength (1,100 MPa) were achieved in the direction perpendicular to the grains alignment compared to specimens with a random distribution of elongated grains. Moreover, the specimens exhibited a high Weibull modulus of 46 due to the uniform distribution of large grains.
229 citations
Patent•
31 Mar 2008TL;DR: In this paper, a memory device is provided which includes a floating gate polysilicon layer disposed over source/drain regions of a substrate, a silicon oxynitride layer over an inter-poly dielectric stack disposed over a silicon oxide layer, and a control gate poly silicon layer over the second aluminum oxide layer.
Abstract: Embodiments of the invention provide memory devices and methods for forming memory devices. In one embodiment, a memory device is provided which includes a floating gate polysilicon layer disposed over source/drain regions of a substrate, a silicon oxynitride layer disposed over the floating gate polysilicon layer, a first aluminum oxide layer disposed over the silicon oxynitride layer, a hafnium silicon oxynitride layer disposed over the first aluminum oxide layer, a second aluminum oxide layer disposed over the hafnium silicon oxynitride layer, and a control gate polysilicon layer disposed over the second aluminum oxide layer. In another embodiment, a memory device is provided which includes a control gate polysilicon layer disposed over an inter-poly dielectric stack disposed over a silicon oxide layer disposed over the floating gate polysilicon layer. The inter-poly dielectric stack contains two silicon oxynitride layers separated by a silicon nitride layer.
228 citations
TL;DR: In this paper, the authors focus on the future developments in the field of c-Si solar cells based on carrier-selective passivation layers and compare combinations of the various options of carrierselective layers concerning their combined selectivities and efficiency potentials.
228 citations