Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Plasma enhanced cyclic chemical vapor deposition of silicon-containing films

Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si-H 3 , preferably of the formula (RR 1 N)SiH 3 wherein R and R 1 are selected independently from C 2 to C 10 , and a nitrogen or oxygen source, preferably ammonia or oxygen, which has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

Pendeoepitaxy of gallium nitride thin films

Abstract: Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (1120) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (1120) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 A. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer.

Nitride-oxide sidewall spacer for salicide formation

Abstract: A method of fabricating a MOSFET device structure, featuring a double insulator spacer, and improved source and drain engineering, has been developed. A silicon nitride--silicon oxide, double spacer, is used to prevent thinning of the insulator spacer, during a buffered hydrofluoric acid procedure, used prior to a metal deposition and metal silicide formation. A lightly doped source and drain region is formed prior to creation of the silicon oxide spacer, a medium doped source and drain region is formed prior to creation of the silicon nitride spacer, and a heavily doped source and drain region is formed following the creation of the silicon nitride spacer. This source and drain configuration increases device performance and reliability.

Optical manipulation of microparticles and cells on silicon nitride waveguides

Abstract: We demonstrate the optical manipulation of cells and dielectric particles on the surface of silicon nitride waveguides. Glass particles with 2μm diameter are propelled at velocities of 15μm/s with a guided power of 20mW. This is approximately 20 times more efficient than previously reported, and permits to use this device on low refractive index objects such as cells. Red blood cells and yeast cells can be trapped on the waveguide and pushed along it by the action of optical forces. This kind of system can easily be combined with various integrated optical structures and opens the way to the development of new microsystems for cell sorting applications.

Cation-Size-Mismatch Tuning of Photoluminescence in Oxynitride Phosphors

Abstract: Red or yellow phosphors excited by a blue light-emitting diode are an efficient source of white light for everyday applications. Many solid oxides and nitrides, particularly silicon nitride-based m...