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Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


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Patent
23 Jan 1998
TL;DR: Tantalum and titanium source reagents are described in this article, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor, ion implantation, molecular beam epitaxy and rapid thermal processing.
Abstract: Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.

180 citations

Patent
Hiroyuki Ohta1
08 Nov 2005
TL;DR: In this article, the method of manufacturing a semiconductor device has the steps of: etching the semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window.
Abstract: The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.

179 citations

Patent
Hiroshi Yamamoto1
15 Oct 1991
TL;DR: The underlying and overlying silicon nitride layers have different degrees of hydrogen content as discussed by the authors, and the overlying layer has more than or equal to twice the hydrogen content of the underlying layer.
Abstract: A semiconductor device is protected by a passivation layer, which includes underlying and overlying silicon nitride layers deposited by the plasma-assisted CVD method by changing layer forming conditions. The silicon nitride layers respectively have their intrinsic compressive stresses. The underlying silicon nitride layer in contact with a metal wiring layer has the intrinsic compressive stress of 3×10 9 to 1×10 10 dyne/cm 2 . The overlying silicon nitride layer has the intrinsic compressive stress which is less than or equal to half of the intrinsic compressive stress of the underlying silicon nitride layer. The underlying and overlying silicon nitride layers have different degrees of the hydrogen content. The underlying silicon nitride layer has the hydrogen content of 0.5×10 20 to 5×10 21 atm/cm 3 . The overlying silicon nitride layer has the hydrogen content which is more than or equal to twice of the hydrogen content of the underlying silicon nitride layer.

179 citations

Patent
15 Nov 1999
TL;DR: In this paper, an oxide etch process using four hydrogen-free fluorocarbons having a low F/C ratio is described. But it is not shown how to use them in a magnetically enhanced reactive ion etcher (MERIE).
Abstract: An oxide etching process, particularly useful for selectively etching oxide (18) over a feature (24) having a non-oxide composition, such as silicon nitride and especially when that feature has a corner (26) that is prone to faceting during the oxide etch. One aspect of the invention uses one of four hydrogen-free fluorocarbons having a low F/C ratio, specifically hexafluorobutadiene (C4F6), octafluoropentadiene (C5F8), hexafluorocyclobutene (C4F6), and hexafluorobenzene (C6F6). At least hexafluorobutadiene has a boiling point below 10 °C and is commercially available. Another aspect of the invention uses an unsaturated fluorocarbon such as pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), both of which have boiling points below 10 °C and are commercially available. The fluorocarbon together with a substantial amount of a noble gas such as argon or xenon is excited into a high-density plasma in a reactor which is inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, one of two two-step etch process is used. In the first, the source and bias power are reduced towards the end of the etch. In the second, the fluorocarbon is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner. The same chemistry can be used in a magnetically enhanced reactive ion etcher (MERIE), preferably with an even larger amount of argon.

178 citations

Journal ArticleDOI
TL;DR: In this paper, a review of the solid-state chemistry of ternary and higher phosphorus(V) nitrides and the relationship between the various types of structure found in this class of substance and the resulting properties and possible applications is presented.
Abstract: Among the nonmetal nitrides, the polymeric binary compounds BN and Si3N4are of particular interest for the development of materials for high-performance applications. The outstanding features of both substances are their thermal, mechanical, and chemical stability, coupled with their low density. Because of their extremely low reactivity, boron and silicon nitride are hardly ever used as starting materials for the preparation of ternary nitrides, but are used primarily in the manufacture of crucibles or other vessels or as insulation materials. The chemistry of ternary and higher nonmetal nitrides that contain electropositive elements and are thus analogous with the oxo compounds such as borates, silicates, phosphates, or sulfates was neglected for many years. Starting from the recent successful preparation of pure P3N5, a further binary nonmetal nitride which shows similarities with Si3N4 with regard to both its structure and properties, this review deals systematically with the solid-state chemistry of ternary and higher phosphorus(V) nitrides and the relationship between the various types of structure found in this class of substance and the resulting properties and possible applications. From the point of view of preparative solid-state chemistry the syntheses, structures, and properties of the binary nonmetal nitrides BN, Si3N4, and P3N5 will be compared and contrasted. The chemistry of the phosphorus(V) nitrides leads us to expect that other nonmetals such as boron, silicon, sulfur, and carbon will also participate in a rich nitride chemistry, as initial reports indeed indicate.

178 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911