scispace - formally typeset
Search or ask a question
Topic

Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.


Papers
More filters
Patent
27 May 2004
TL;DR: In this article, the authors proposed a solution to provide a reliable nonvolatile semiconductor storage device free from occurrence of interference between adjacent cells, where the ends of the cut off silicon nitride films are covered with a silicon oxide film formed thereon.
Abstract: PROBLEM TO BE SOLVED: To provide a reliable nonvolatile semiconductor storage device free from occurrence of interference between adjacent cells. SOLUTION: As for the ONO film of a slit 205 on an element separation area 202, a silicon nitride film is cut off at its center. Since the ends of the cut off silicon nitride films are covered with a silicon oxide film formed thereon, electrons are trapped in the silicon nitride film. Thus, even when the electrons are spread and drifted in the silicon nitride film, the electrons never reach the adjacent cells. COPYRIGHT: (C)2004,JPO

169 citations

Journal ArticleDOI
TL;DR: In this article, the anticorrosive performance of modified silicon nitride with silane (KH-570) was investigated by electrochemical impedance spectroscopy (EIS), water absorption and pull-off adhesion methods.
Abstract: Silicon nitride was firstly used as anticorrosive pigment in organic coatings. An effective strategy by combining inorganic fillers and organosilanes was used to enhance the dispersibility of silicon nitride in epoxy resin. The formed nanocomposites were applied to protect Q235 carbon steel from corrosion. The anticorrosive performance of modified silicon nitride with silane (KH-570) was investigated by electrochemical impedance spectroscopy (EIS), water absorption and pull-off adhesion methods. With the increase of immersion time, the corrosion resistance as well as adhesion strength of epoxy resin coating and unmodified silicon nitride coating decreased significantly. However, for the modified silicon nitride coating, the corrosion resistance and adhesion strength still maintained 5.7×1010 Ω cm2 and 7.6 MPa after 2400-h and 1200-h immersion, respectively. The excellent corrosion resistance performance could be attributed to the chemical interactions between KH-570 functional groups and silicon nitride powders, which mainly came from the easy formation of Si-O-Si bonds. Furthermore, the modified silicon nitride coating formed a strong barrier to corrosive electrolyte due to the hydrophobic of modified silicon nitride powder and increased bonds.

168 citations

Patent
01 Nov 1996
TL;DR: In this paper, a low-cost process for forming and passivating a selective emitter is proposed, which uses a plasma etch of the heavily doped emitter to improve its performance.
Abstract: A potentially low-cost process for forming and passivating a selective emitter The process uses a plasma etch of the heavily doped emitter to improve its performance The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance This process is potentially low-cost because it requires no alignment After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas

168 citations

Journal ArticleDOI
TL;DR: A detailed examination of the effects of deposition parameters, using LPCVD, and subsequent processing on the characteristics of silicon nitride is presented in this paper, where the properties investigated are deposition rate, refractive index, etch rate and intrinsic strain.
Abstract: A detailed examination of the effects of deposition parameters, using LPCVD, and subsequent processing on the characteristics of silicon nitride is presented The properties investigated are deposition rate, refractive index, etch rate and intrinsic strain The chemical composition of the material is determined using XPS and EPMA A close relationship between the chemical composition and mechanical properties is observed The ratio of process gas flow (using NH 3 and SiH 2 Cl 2 ) is shown to have a strong effect on all properties with deposition pressure having a secondary effect As the gas-flow ratio NH 3 /SiH 2 Cl 2 is ranged from 0176 to 1 the silicon content changes from Si/N=095 to 086, yielding a change in strain levels from 350 μϵ to 3000 μϵ Further increase in NH 3 yields only minor changes in silicon to nitrogen ratio and thus only minor changes in the film characteristics Additional thermal processing is shown to have a considerable effect on the mechanical properties of the material X-ray studies suggest that this to be due to volume shrinkage of the layer and not phase transformations involving crystallographic changes Tuning of the film properties through the processing parameters is shown

168 citations

Journal ArticleDOI
TL;DR: High quality factor microdisk resonators are demonstrated in a Si(3)N(4) on SiO(2) platform at 652-660 nm with integrated in-plane coupling waveguides with critical coupling to several radial modes.
Abstract: High quality factor (Q approximately 3.4 x 10(6)) microdisk resonators are demonstrated in a Si(3)N(4) on SiO(2) platform at 652-660 nm with integrated in-plane coupling waveguides. Critical coupling to several radial modes is demonstrated using a rib-like structure with a thin Si(3)N(4) layer at the air-substrate interface to improve the coupling.

167 citations


Network Information
Related Topics (5)
Thin film
275.5K papers, 4.5M citations
93% related
Silicon
196K papers, 3M citations
93% related
Amorphous solid
117K papers, 2.2M citations
90% related
Oxide
213.4K papers, 3.6M citations
90% related
Dielectric
169.7K papers, 2.7M citations
89% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023245
2022529
2021421
2020686
2019994
2018911